Takeshi Tawara

Person

Matsumoto-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical MOSFET having trench gate structure containing silicon car...
- Patent number 11,948,976
- Issue date Apr 2, 2024
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 11,296,192
- Issue date Apr 5, 2022
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial substrate, method of manufacturing thereo...
- Patent number 11,201,218
- Issue date Dec 14, 2021
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and a method of manufacturing...
- Patent number 10,868,122
- Issue date Dec 15, 2020
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor substrate, method of manufacturing si...
- Patent number 10,796,906
- Issue date Oct 6, 2020
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor substrate, method of manufacturing a...
- Patent number 10,748,763
- Issue date Aug 18, 2020
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 10,665,681
- Issue date May 26, 2020
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor substrate, method of manufacturing si...
- Patent number 10,629,432
- Issue date Apr 21, 2020
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a silicon carbide semiconductor device incl...
- Patent number 10,573,716
- Issue date Feb 25, 2020
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial wafer, silicon carbide insulated gate bip...
- Patent number 10,522,667
- Issue date Dec 31, 2019
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor substrate, method of manufacturing si...
- Patent number 10,453,924
- Issue date Oct 22, 2019
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing a...
- Patent number 10,418,445
- Issue date Sep 17, 2019
- Fuji Electric Co., Ltd.
- Mina Ryo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 10,418,477
- Issue date Sep 17, 2019
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer manufacturing method, epitaxial wafer, semiconducto...
- Patent number 10,354,867
- Issue date Jul 16, 2019
- Fuji Electric Co., Ltd.
- Hidekazu Tsuchida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide semiconductor base, method of crystal axis alignmen...
- Patent number 10,032,724
- Issue date Jul 24, 2018
- Fuji Electric Co., Ltd.
- Yasuyuki Kawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor element, method of manufacturing the...
- Patent number 9,117,681
- Issue date Aug 25, 2015
- Fuji Electric Co., Ltd.
- Yasuyuki Kawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device and t...
- Patent number 8,648,353
- Issue date Feb 11, 2014
- Fuji Electric Co., Ltd.
- Yasuyuki Kawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing t...
- Patent number 8,324,631
- Issue date Dec 4, 2012
- Fuji Electric Co., Ltd.
- Yoshiyuki Yonezawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing silicon carbide semiconductor device and t...
- Patent number 8,232,184
- Issue date Jul 31, 2012
- Fuji Electric Co., Ltd.
- Yasuyuki Kawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a silicon carbide semiconductor device
- Patent number 8,124,510
- Issue date Feb 28, 2012
- Fuji Electric Co., Ltd.
- Yasuyuki Kawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor element, method of manufacturing the...
- Patent number 8,114,783
- Issue date Feb 14, 2012
- Fuji Electric Co., Ltd.
- Yasuyuki Kawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor device
- Patent number 7,682,991
- Issue date Mar 23, 2010
- Fuji Electric Device Technology Co., Ltd.
- Yasuyuki Kawada
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SUPERJUNCTION SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MA...
- Publication number 20240347587
- Publication date Oct 17, 2024
- Fuji Electric Co., Ltd.
- Kensuke TAKENAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SI...
- Publication number 20240204051
- Publication date Jun 20, 2024
- Fuji Electric Co., Ltd.
- Kensuke TAKENAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20240038851
- Publication date Feb 1, 2024
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20230100453
- Publication date Mar 30, 2023
- FUJI ELECTRIC CO., LTD.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURI...
- Publication number 20220285489
- Publication date Sep 8, 2022
- Fuji Electric Co., Ltd.
- Kensuke TAKENAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL MOSFET HAVING TRENCH GATE STRUCTURE CONTAINING SILICON CAR...
- Publication number 20220190114
- Publication date Jun 16, 2022
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20220123112
- Publication date Apr 21, 2022
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD OF MANUFACTURING THEREO...
- Publication number 20200312966
- Publication date Oct 1, 2020
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SI...
- Publication number 20200251333
- Publication date Aug 6, 2020
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20200144371
- Publication date May 7, 2020
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING...
- Publication number 20190393312
- Publication date Dec 26, 2019
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20190237547
- Publication date Aug 1, 2019
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING A...
- Publication number 20190103271
- Publication date Apr 4, 2019
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A...
- Publication number 20180358444
- Publication date Dec 13, 2018
- Fuji Electric Co., Ltd.
- Mina Ryo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SI...
- Publication number 20180323263
- Publication date Nov 8, 2018
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER, SILICON CARBIDE INSULATED GATE BIP...
- Publication number 20180315842
- Publication date Nov 1, 2018
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20180182887
- Publication date Jun 28, 2018
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SI...
- Publication number 20180082841
- Publication date Mar 22, 2018
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR BASE, METHOD OF CRYSTAL AXIS ALIGNMEN...
- Publication number 20180061960
- Publication date Mar 1, 2018
- Fuji Electric Co., Ltd.
- Yasuyuki KAWADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL WAFER MANUFACTURING METHOD, EPITAXIAL WAFER, SEMICONDUCTO...
- Publication number 20180012758
- Publication date Jan 11, 2018
- Fuji Electric Co., Ltd.
- Hidekazu TSUCHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20170271455
- Publication date Sep 21, 2017
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND T...
- Publication number 20120261677
- Publication date Oct 18, 2012
- Fuji Electric Co., Ltd.
- Yasuyuki KAWADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR ELEMENT, METHOD OF MANUFACTURING THE...
- Publication number 20120104417
- Publication date May 3, 2012
- Fuji Electric Co., Ltd.
- Yasuyuki KAWADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20110070723
- Publication date Mar 24, 2011
- FUJI ELECTRIC SYSTEMS CO.,LTD.
- Yasuyuki KAWADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND T...
- Publication number 20100187543
- Publication date Jul 29, 2010
- Fuji Electric Systems Co., Ltd.
- Yasuyuki Kawada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR ELEMENT, METHOD OF MANUFACTURING THE...
- Publication number 20090045414
- Publication date Feb 19, 2009
- Fuji Electric Device Technology Co., LTD.
- Yasuyuki KAWADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20080318359
- Publication date Dec 25, 2008
- Fuji Electric Device Technology Co., LTD.
- Yoshiyuki Yonezawa
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20080220620
- Publication date Sep 11, 2008
- Fuji Electric Device Technology Co., LTD.
- Yasuyuki KAWADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20080079008
- Publication date Apr 3, 2008
- FUJI ELECTRIC HOLDINGS CO., LTD.
- Yoshiyuki YONEZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing silicon carbide semiconductor devices
- Publication number 20070015333
- Publication date Jan 18, 2007
- Fuji Electric Holdings Co., Ltd.
- Daisuke Kishimoto
- H01 - BASIC ELECTRIC ELEMENTS

Takeshi Tawara

Person

Patents Grantslast 30 patents

Vertical MOSFET having trench gate structure containing silicon car...

Silicon carbide semiconductor device and method of manufacturing si...

Silicon carbide epitaxial substrate, method of manufacturing thereo...

Silicon carbide semiconductor device and a method of manufacturing...

Silicon carbide semiconductor substrate, method of manufacturing si...

Silicon carbide semiconductor substrate, method of manufacturing a...

Silicon carbide semiconductor device and method of manufacturing si...

Silicon carbide semiconductor substrate, method of manufacturing si...

Method of manufacturing a silicon carbide semiconductor device incl...

Silicon carbide epitaxial wafer, silicon carbide insulated gate bip...

Silicon carbide semiconductor substrate, method of manufacturing si...

Silicon carbide semiconductor device and method of manufacturing a...

Silicon carbide semiconductor device and method of manufacturing si...

Epitaxial wafer manufacturing method, epitaxial wafer, semiconducto...

Silicon carbide semiconductor base, method of crystal axis alignmen...

Silicon carbide semiconductor element, method of manufacturing the...

Method for manufacturing silicon carbide semiconductor device and t...

Silicon carbide semiconductor device and method for manufacturing t...

Method for manufacturing silicon carbide semiconductor device and t...

Method of manufacturing a silicon carbide semiconductor device

Silicon carbide semiconductor element, method of manufacturing the...

Method of manufacturing silicon carbide semiconductor device

Patents Applicationslast 30 patents

SUPERJUNCTION SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MA...

SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SI...

SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SUPER JUNCTION SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURI...

VERTICAL MOSFET HAVING TRENCH GATE STRUCTURE CONTAINING SILICON CAR...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD OF MANUFACTURING THEREO...

SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SI...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING A...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A...

SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SI...

SILICON CARBIDE EPITAXIAL WAFER, SILICON CARBIDE INSULATED GATE BIP...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SI...

SILICON CARBIDE SEMICONDUCTOR BASE, METHOD OF CRYSTAL AXIS ALIGNMEN...

EPITAXIAL WAFER MANUFACTURING METHOD, EPITAXIAL WAFER, SEMICONDUCTO...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND T...

SILICON CARBIDE SEMICONDUCTOR ELEMENT, METHOD OF MANUFACTURING THE...

METHOD OF MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND T...

SILICON CARBIDE SEMICONDUCTOR ELEMENT, METHOD OF MANUFACTURING THE...

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR SUBSTRATE

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

Method for manufacturing silicon carbide semiconductor devices