Takeshi Uenoyama

Person

Kyotanabe-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor light emitting element and method for fabricating the...
- Patent number 7,368,766
- Issue date May 6, 2008
- Matsushita Electric Industrial Co., Ltd.
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an active region of alternating layers
- Patent number 6,989,553
- Issue date Jan 24, 2006
- Matsushita Electric Industrial Co., Ltd.
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MISFET
- Patent number 6,864,507
- Issue date Mar 8, 2005
- Matsushita Electric Industrial Co., Ltd.
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting element and method for fabricating the...
- Patent number 6,861,672
- Issue date Mar 1, 2005
- Matsushita Electric Industrial Co., Ltd.
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an active region of alternating layers
- Patent number 6,690,035
- Issue date Feb 10, 2004
- Matsushita Electric Industrial Co., Ltd.
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device for high-temperature applications
- Patent number 6,674,131
- Issue date Jan 6, 2004
- Matsushita Electric Industrial Co., Ltd.
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiGeC-based CMOSFET with separate heterojunctions
- Patent number 6,674,100
- Issue date Jan 6, 2004
- Matsushita Electric Industrial Co., Ltd.
- Minoru Kubo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric film and method of fabricating the same
- Patent number 6,624,462
- Issue date Sep 23, 2003
- Matsushita Electric Industrial Co., Ltd.
- Naoki Kohara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
MISFET
- Patent number 6,617,653
- Issue date Sep 9, 2003
- Matsushita Electric Industrial Co., Ltd.
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron device and junction transistor
- Patent number 6,566,692
- Issue date May 20, 2003
- Matsushita Electric Industrial Co., Ltd.
- Takeshi Uenoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET having a Si/SiGeC heterojunction channel
- Patent number 6,399,970
- Issue date Jun 4, 2002
- Matsushita Electric Industrial Co., Ltd.
- Minoru Kubo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electron-emitting device
- Patent number 6,350,999
- Issue date Feb 26, 2002
- Matsushita Electric Industrial Co., Ltd.
- Takeshi Uenoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting element and method for fabricating the...
- Patent number 6,326,638
- Issue date Dec 4, 2001
- Matsushita Electric Industrial Co., Ltd.
- Satoshi Kamiyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for making insulated-gate semiconductor element
- Patent number 6,228,720
- Issue date May 8, 2001
- Matsushita Electric Industrial Co., Ltd.
- Makoto Kitabatake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming HCMOS devices with a silicon-germanium-carbon com...
- Patent number 6,190,975
- Issue date Feb 20, 2001
- Matsushita Electric Industrial Co., Ltd.
- Minoru Kubo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device and optical disk apparatus using the same
- Patent number 6,141,364
- Issue date Oct 31, 2000
- Matsushita Electric Industrial Co., Ltd.
- Hideto Adachi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser device and optical disk apparatus using the same
- Patent number 6,081,541
- Issue date Jun 27, 2000
- Matsushita Electric Industrial Co., Ltd.
- Hideto Adachi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser device and optical disk apparatus using the same
- Patent number 6,072,817
- Issue date Jun 6, 2000
- Matsushita Electric Industrial Co., Ltd.
- Hideto Adachi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser device with an optical guide layer
- Patent number 6,055,253
- Issue date Apr 25, 2000
- Matsushita Electric Industrial Co., Ltd.
- Isao Kidoguchi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light emitting element and method for fabricating the...
- Patent number 5,787,104
- Issue date Jul 28, 1998
- Matsushita Electric Industrial Co., Ltd.
- Satoshi Kamiyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light-emitting device and production method thereof,...
- Patent number 5,705,831
- Issue date Jan 6, 1998
- Matsushita Electric Industrial Co., Ltd.
- Nobuyuki Uemura
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetoresistive element and memory element
- Patent number 5,691,936
- Issue date Nov 25, 1997
- Matsushita Electric Industrial Co., Ltd.
- Hiroshi Sakakima
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nonlinear element and bistable memory device
- Patent number 5,665,978
- Issue date Sep 9, 1997
- Matsushita Electric Industrial Co., Ltd.
- Takeshi Uenoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device
- Patent number 5,600,667
- Issue date Feb 4, 1997
- Matsushita Electric Industrial Co., Ltd.
- Isao Kidoguchi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor laser device
- Patent number 5,502,739
- Issue date Mar 26, 1996
- Matsushita Electric Industrial Co., Ltd.
- Isao Kidoguchi
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE...
- Publication number 20090159924
- Publication date Jun 25, 2009
- PANASONIC CORPORATION
- Satoshi Kamiyama
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE...
- Publication number 20070228395
- Publication date Oct 4, 2007
- Matsushita Electric Industrial Co., Ltd.
- Satoshi Kamiyama
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor light emitting element and method for fabricating the...
- Publication number 20050003571
- Publication date Jan 6, 2005
- Satoshi Kamiyama
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor device
- Publication number 20040217375
- Publication date Nov 4, 2004
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MISFET
- Publication number 20030227061
- Publication date Dec 11, 2003
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20030006415
- Publication date Jan 9, 2003
- Toshiya Yokogawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of producing the same
- Publication number 20020105015
- Publication date Aug 8, 2002
- Matsushita Electric Industrial Co., Ltd.
- Minoru Kubo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor light emitting element and method for fabricating the...
- Publication number 20020054616
- Publication date May 9, 2002
- Satoshi Kamiyama
- B82 - NANO-TECHNOLOGY
Information Patent Application
Electron device and junction transistor
- Publication number 20020027236
- Publication date Mar 7, 2002
- Takeshi Uenoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME
- Publication number 20020011617
- Publication date Jan 31, 2002
- MINORU KUBO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated-gate semiconductor element and method for manufacturing t...
- Publication number 20010053561
- Publication date Dec 20, 2001
- Matsushita Electric Industrial Co., Ltd.
- Makoto Kitabatake
- H01 - BASIC ELECTRIC ELEMENTS

Takeshi Uenoyama

Person

Patents Grantslast 30 patents

Semiconductor light emitting element and method for fabricating the...

Semiconductor device having an active region of alternating layers

MISFET

Semiconductor light emitting element and method for fabricating the...

Semiconductor device having an active region of alternating layers

Semiconductor power device for high-temperature applications

SiGeC-based CMOSFET with separate heterojunctions

Dielectric film and method of fabricating the same

MISFET

Electron device and junction transistor

FET having a Si/SiGeC heterojunction channel

Electron-emitting device

Semiconductor light emitting element and method for fabricating the...

Method for making insulated-gate semiconductor element

Method of forming HCMOS devices with a silicon-germanium-carbon com...

Semiconductor laser device and optical disk apparatus using the same

Semiconductor laser device and optical disk apparatus using the same

Semiconductor laser device and optical disk apparatus using the same

Semiconductor laser device with an optical guide layer

Semiconductor light emitting element and method for fabricating the...

Semiconductor light-emitting device and production method thereof,...

Magnetoresistive element and memory element

Nonlinear element and bistable memory device

Semiconductor laser device

Semiconductor laser device

Patents Applicationslast 30 patents

SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE...

SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE...

Semiconductor light emitting element and method for fabricating the...

Semiconductor device

MISFET

Semiconductor device

Semiconductor device and method of producing the same

Semiconductor light emitting element and method for fabricating the...

Electron device and junction transistor

SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME

Insulated-gate semiconductor element and method for manufacturing t...