Takuji Okahisa

Person

Itami-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing diamond substrate, diamond substrate, and d...
- Patent number 11,692,264
- Issue date Jul 4, 2023
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing diamond substrate, diamond substrate, and d...
- Patent number 11,359,275
- Issue date Jun 14, 2022
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing diamond substrate, diamond substrate, and d...
- Patent number 10,822,693
- Issue date Nov 3, 2020
- Sumitomo Electric Industries, Ltd
- Takuji Okahisa
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of manufacturing diamond substrate, diamond substrate, and d...
- Patent number 10,487,395
- Issue date Nov 26, 2019
- Sumitomo Electric Industries, Ltd
- Takuji Okahisa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
GaN-crystal free-standing substrate and method for producing the same
- Patent number 9,153,742
- Issue date Oct 6, 2015
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Composite of III-nitride crystal on laterally stacked substrates
- Patent number 9,064,706
- Issue date Jun 23, 2015
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Composite of III-nitride crystal on laterally stacked substrates
- Patent number 8,872,309
- Issue date Oct 28, 2014
- Sumitomo Electronic Industries, Ltd.
- Naho Mizuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride single-crystal ingot, III-nitride single-crystal substr...
- Patent number 8,845,992
- Issue date Sep 30, 2014
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing III-nitride crystal
- Patent number 8,709,923
- Issue date Apr 29, 2014
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Group III nitride semiconductor crystal substrate and semiconductor...
- Patent number 8,698,282
- Issue date Apr 15, 2014
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN-crystal free-standing substrate and method for producing the same
- Patent number 8,574,364
- Issue date Nov 5, 2013
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride semiconductor substrate and manufacturing method...
- Patent number 8,421,190
- Issue date Apr 16, 2013
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group-III nitride crystal composite
- Patent number 8,404,042
- Issue date Mar 26, 2013
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Fabrication method and fabrication apparatus of group III nitride c...
- Patent number 8,404,569
- Issue date Mar 26, 2013
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing III-nitride crystal, and semiconductor devi...
- Patent number 8,258,051
- Issue date Sep 4, 2012
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
AlxInyGal-x-yN mixture crystal substrate, method of growing same an...
- Patent number 8,198,177
- Issue date Jun 12, 2012
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing gallium nitride crystal and gallium nitrid...
- Patent number 8,147,612
- Issue date Apr 3, 2012
- Sumitomo Electric Industries, Ltd.
- Tomoki Uemura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method of nitride substrate, nitride substrate, and n...
- Patent number 8,097,528
- Issue date Jan 17, 2012
- Sumitomo Electric Industries, Ltd
- Takuji Okahisa
- C30 - CRYSTAL GROWTH
Information Patent Grant
AlxInyGa1-x-yN mixture crystal substrate, method of growing same an...
- Patent number 8,067,300
- Issue date Nov 29, 2011
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Grant
AlxGayIn1−x−yN crystal substrate, semiconductor device, and method...
- Patent number 7,943,964
- Issue date May 17, 2011
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fabrication method and fabrication apparatus of group III nitride c...
- Patent number 7,858,502
- Issue date Dec 28, 2010
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of growing GaN crystal, method of producing single crystal G...
- Patent number 7,794,543
- Issue date Sep 14, 2010
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Growth method of GaN crystal, and GaN crystal substrate
- Patent number 7,723,142
- Issue date May 25, 2010
- Sumitomo Electric Industries, Ltd.
- Naoki Matsumoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method of nitride substrate, nitride substrate, and n...
- Patent number 7,691,732
- Issue date Apr 6, 2010
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
A1xInyGa1-x-yN mixture crystal substrate, method of growing same an...
- Patent number 7,655,960
- Issue date Feb 2, 2010
- Sumito Electric Industries, Ltd.
- Seiji Nakahata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method and fabrication apparatus of group III nitride c...
- Patent number 7,589,000
- Issue date Sep 15, 2009
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Single crystal GaN substrate, method of growing single crystal GaN...
- Patent number 7,534,310
- Issue date May 19, 2009
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial substrate and semiconductor element
- Patent number 7,531,889
- Issue date May 12, 2009
- Sumitomo Electric Industries, Ltd.
- Makoto Kiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN single crystal substrate and method of making the same
- Patent number 7,521,339
- Issue date Apr 21, 2009
- Sumitomo Electric Industries Ltd.
- Kensaku Motoki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN single crystal substrate and method of making the same
- Patent number 7,504,323
- Issue date Mar 17, 2009
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method of Manufacturing Diamond Substrate, Diamond Substrate, and D...
- Publication number 20220267894
- Publication date Aug 25, 2022
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD OF MANUFACTURING DIAMOND SUBSTRATE, DIAMOND SUBSTRATE, AND D...
- Publication number 20210010131
- Publication date Jan 14, 2021
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD OF MANUFACTURING DIAMOND SUBSTRATE, DIAMOND SUBSTRATE, AND D...
- Publication number 20200040446
- Publication date Feb 6, 2020
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C01 - INORGANIC CHEMISTRY
Information Patent Application
METHOD OF MANUFACTURING DIAMOND SUBSTRATE, DIAMOND SUBSTRATE, AND D...
- Publication number 20180209038
- Publication date Jul 26, 2018
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Composite of III-Nitride Crystal on Laterally Stacked Substrates
- Publication number 20150008563
- Publication date Jan 8, 2015
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite of III-Nitride Crystal on Laterally Stacked Substrates
- Publication number 20140175616
- Publication date Jun 26, 2014
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME
- Publication number 20130292737
- Publication date Nov 7, 2013
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...
- Publication number 20130244406
- Publication date Sep 19, 2013
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE GaN SUBSTRATE, METHOD FOR MANUFACTURING COMPOSITE GaN SUB...
- Publication number 20130175543
- Publication date Jul 11, 2013
- Sumitomo Electric Industries, Ltd.
- Makoto Kiyama
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Manufacturing III-Nitride Crystal
- Publication number 20130160699
- Publication date Jun 27, 2013
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Application
Group-III Nitride Crystal Composite
- Publication number 20120315445
- Publication date Dec 13, 2012
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRID...
- Publication number 20120164058
- Publication date Jun 28, 2012
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Tomoki UEMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AN...
- Publication number 20120040511
- Publication date Feb 16, 2012
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME
- Publication number 20120034149
- Publication date Feb 9, 2012
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MAKING THE SAME
- Publication number 20110163323
- Publication date Jul 7, 2011
- SUMITOMO ELECTRIC INDUSTIRES, LTD.
- Kensaku Motoki
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...
- Publication number 20110065265
- Publication date Mar 17, 2011
- Sumitomo Electric Industries, Ltd.
- Hitoshi KASAI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD...
- Publication number 20110018003
- Publication date Jan 27, 2011
- Sumitomo Electric Industries, Ltd.
- Takuji OKAHISA
- C30 - CRYSTAL GROWTH
Information Patent Application
III-Nitride Single-Crystal Ingot, III-Nitride Single-Crystal Substr...
- Publication number 20100322841
- Publication date Dec 23, 2010
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III Nitride Semiconductor Crystal Substrate and Semiconductor...
- Publication number 20100164070
- Publication date Jul 1, 2010
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Takuji Okahisa
- C30 - CRYSTAL GROWTH
Information Patent Application
Manufacturing Method of Nitride Substrate, Nitride Substrate, and N...
- Publication number 20100155902
- Publication date Jun 24, 2010
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Takuji OKAHISA
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...
- Publication number 20100009526
- Publication date Jan 14, 2010
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF NITRIDE SUBSTRATE, NITRIDE SUBSTRATE, AND N...
- Publication number 20090315149
- Publication date Dec 24, 2009
- Sumitomo Electric Industries, Ltd.
- Takuji OKAHISA
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN single crystal substrate and method of making the same
- Publication number 20090263955
- Publication date Oct 22, 2009
- Sumitomo Electric Industries, Ltd.
- Kensaku Motoki
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Manufacturing III-Nitride Crystal, and Semiconductor Devi...
- Publication number 20090236694
- Publication date Sep 24, 2009
- Sumitomo Electric Industries, Ltd.
- Naho Mizuhara
- C30 - CRYSTAL GROWTH
Information Patent Application
AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AN...
- Publication number 20090215248
- Publication date Aug 27, 2009
- Sumitomo Electric Industries, Ltd.
- Seiji Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRID...
- Publication number 20090194848
- Publication date Aug 6, 2009
- Sumitomo Electric Industries, Ltd.
- Tomoki Uemura
- C30 - CRYSTAL GROWTH
Information Patent Application
A1xGa yIn 1-x-yN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHO...
- Publication number 20090194847
- Publication date Aug 6, 2009
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE AND SEMICONDUCTOR...
- Publication number 20090127662
- Publication date May 21, 2009
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR CRYSTAL GROWING METHOD, GROUP III N...
- Publication number 20090127664
- Publication date May 21, 2009
- Sumitomo Electric Industries, Ltd.
- Takuji OKAHISA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR CRYSTAL GROWING METHOD, GROUP III N...
- Publication number 20090127663
- Publication date May 21, 2009
- SUMITOMO ELECTRIC INDUSTRIES LTD.
- Takuji Okahisa
- H01 - BASIC ELECTRIC ELEMENTS

Takuji Okahisa

Person

Patents Grantslast 30 patents

Method of manufacturing diamond substrate, diamond substrate, and d...

Method of manufacturing diamond substrate, diamond substrate, and d...

Method of manufacturing diamond substrate, diamond substrate, and d...

Method of manufacturing diamond substrate, diamond substrate, and d...

GaN-crystal free-standing substrate and method for producing the same

Composite of III-nitride crystal on laterally stacked substrates

Composite of III-nitride crystal on laterally stacked substrates

III-nitride single-crystal ingot, III-nitride single-crystal substr...

Method of manufacturing III-nitride crystal

Group III nitride semiconductor crystal substrate and semiconductor...

GaN-crystal free-standing substrate and method for producing the same

Group III nitride semiconductor substrate and manufacturing method...

Group-III nitride crystal composite

Fabrication method and fabrication apparatus of group III nitride c...

Method of manufacturing III-nitride crystal, and semiconductor devi...

AlxInyGal-x-yN mixture crystal substrate, method of growing same an...

Method for manufacturing gallium nitride crystal and gallium nitrid...

Manufacturing method of nitride substrate, nitride substrate, and n...

AlxInyGa1-x-yN mixture crystal substrate, method of growing same an...

AlxGayIn1−x−yN crystal substrate, semiconductor device, and method...

Fabrication method and fabrication apparatus of group III nitride c...

Method of growing GaN crystal, method of producing single crystal G...

Growth method of GaN crystal, and GaN crystal substrate

Manufacturing method of nitride substrate, nitride substrate, and n...

A1xInyGa1-x-yN mixture crystal substrate, method of growing same an...

Fabrication method and fabrication apparatus of group III nitride c...

Single crystal GaN substrate, method of growing single crystal GaN...

Epitaxial substrate and semiconductor element

GaN single crystal substrate and method of making the same

GaN single crystal substrate and method of making the same

Patents Applicationslast 30 patents

Method of Manufacturing Diamond Substrate, Diamond Substrate, and D...

METHOD OF MANUFACTURING DIAMOND SUBSTRATE, DIAMOND SUBSTRATE, AND D...

METHOD OF MANUFACTURING DIAMOND SUBSTRATE, DIAMOND SUBSTRATE, AND D...

METHOD OF MANUFACTURING DIAMOND SUBSTRATE, DIAMOND SUBSTRATE, AND D...

Composite of III-Nitride Crystal on Laterally Stacked Substrates

Composite of III-Nitride Crystal on Laterally Stacked Substrates

GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME

FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...

COMPOSITE GaN SUBSTRATE, METHOD FOR MANUFACTURING COMPOSITE GaN SUB...

Method of Manufacturing III-Nitride Crystal

Group-III Nitride Crystal Composite

METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRID...

AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AN...

GaN-CRYSTAL FREE-STANDING SUBSTRATE AND METHOD FOR PRODUCING THE SAME

GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MAKING THE SAME

FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...

GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD...

III-Nitride Single-Crystal Ingot, III-Nitride Single-Crystal Substr...

Group III Nitride Semiconductor Crystal Substrate and Semiconductor...

Manufacturing Method of Nitride Substrate, Nitride Substrate, and N...

FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE C...

MANUFACTURING METHOD OF NITRIDE SUBSTRATE, NITRIDE SUBSTRATE, AND N...

GaN single crystal substrate and method of making the same

Method of Manufacturing III-Nitride Crystal, and Semiconductor Devi...

AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AN...

METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRID...

A1xGa yIn 1-x-yN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHO...

GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE AND SEMICONDUCTOR...

GROUP III NITRIDE SEMICONDUCTOR CRYSTAL GROWING METHOD, GROUP III N...

GROUP III NITRIDE SEMICONDUCTOR CRYSTAL GROWING METHOD, GROUP III N...