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Takuya FUTASE
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Yokkaichi, JP
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Patents Grants
last 30 patents
Information
Patent Grant
Low resistance multi-layer electrode for phase change memory and me...
Patent number
11,758,831
Issue date
Sep 12, 2023
Takuya Futase
Information
Patent Grant
Low resistance monosilicide electrode for phase change memory and m...
Patent number
11,721,392
Issue date
Aug 8, 2023
Western Digital Technologies, Inc.
Takuya Futase
G11 - INFORMATION STORAGE
Information
Patent Grant
Memory array containing capped aluminum access lines and method of...
Patent number
11,424,292
Issue date
Aug 23, 2022
Western Digital Technologies, Inc.
Takuya Futase
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Low resistance monosilicide electrode for phase change memory and m...
Patent number
11,114,157
Issue date
Sep 7, 2021
Western Digital Technologies, Inc.
Takuya Futase
G11 - INFORMATION STORAGE
Information
Patent Grant
Resistive memory cell programmed by metal alloy formation and metho...
Patent number
10,297,312
Issue date
May 21, 2019
SanDisk Technologies LLC
Takuya Futase
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Three-dimensional resistive random access memory containing self-al...
Patent number
10,096,654
Issue date
Oct 9, 2018
SanDisk Technologies LLC
Shin Kikuchi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Buried etch stop layer for damascene bit line formation
Patent number
9,847,249
Issue date
Dec 19, 2017
SanDisk Technologies LLC
Yuji Takahashi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Double trench isolation
Patent number
9,799,527
Issue date
Oct 24, 2017
SanDisk Technologies LLC
Katsuo Yamada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Source line formation and structure
Patent number
9,768,183
Issue date
Sep 19, 2017
SanDisk Technologies LLC
Shunsuke Akimoto
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Metal line with increased inter-metal breakdown voltage
Patent number
9,607,997
Issue date
Mar 28, 2017
SanDisk Technologies Inc.
Katsuo Yamada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Early bit line air gap formation
Patent number
9,524,904
Issue date
Dec 20, 2016
SanDisk Technologies LLC
Hiroto Ohori
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Conductive line structure with openings
Patent number
9,478,461
Issue date
Oct 25, 2016
SanDisk Technologies LLC
Kiyokazu Shishido
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Contact hole collimation using etch-resistant walls
Patent number
9,466,523
Issue date
Oct 11, 2016
SanDisk Technologies LLC
Tomoyasu Kakegawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Silicided bit line for reversible-resistivity memory
Patent number
9,443,910
Issue date
Sep 13, 2016
SanDisk Technologies LLC
Kan Fujiwara
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Air gaps structures for damascene metal patterning
Patent number
9,401,305
Issue date
Jul 26, 2016
SanDisk Technologies LLC
Yuji Takahashi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Metal indentation to increase inter-metal breakdown voltage
Patent number
9,391,081
Issue date
Jul 12, 2016
SanDisk Technologies LLC
Kiyokazu Shishido
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
NAND flash memory integrated circuits and processes with controlled...
Patent number
9,245,898
Issue date
Jan 26, 2016
SanDisk Technologies Inc.
Eiichi Fujikura
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Barrier layer stack for bit line air gap formation
Patent number
9,177,853
Issue date
Nov 3, 2015
SanDisk Technologies Inc.
Takuya Futase
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
MEMORY ARRAY CONTAINING CAPPED ALUMINUM ACCESS LINES AND METHOD OF...
Publication number
20210399053
Publication date
Dec 23, 2021
WESTERN DIGITAL TECHNOLOGIES, INC.,
Takuya FUTASE
G11 - INFORMATION STORAGE
Information
Patent Application
LOW RESISTANCE MONOSILICIDE ELECTRODE FOR PHASE CHANGE MEMORY AND M...
Publication number
20210391006
Publication date
Dec 16, 2021
Western Digital Technologies, Inc.
Takuya Futase
G11 - INFORMATION STORAGE
Information
Patent Application
LOW RESISTANCE MULTI-LAYER ELECTRODE FOR PHASE CHANGE MEMORY AND ME...
Publication number
20210336136
Publication date
Oct 28, 2021
Western Digital Technologies, Inc.
Takuya Futase
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
RESISTIVE MEMORY CELL PROGRAMMED BY METAL ALLOY FORMATION AND METHO...
Publication number
20190172532
Publication date
Jun 6, 2019
SanDisk Technologies LLC
Takuya FUTASE
G11 - INFORMATION STORAGE
Information
Patent Application
THREE-DIMENSIONAL RESISTIVE RANDOM ACCESS MEMORY CONTAINING SELF-AL...
Publication number
20170077184
Publication date
Mar 16, 2017
SanDisk 3D LLC
Shin KIKUCHI
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Metal Line with Increased Inter-Metal Breakdown Voltage
Publication number
20170069638
Publication date
Mar 9, 2017
SANDISK TECHNOLOGIES INC.
Katsuo Yamada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Contact Plug Constrained By Dielectric Portions
Publication number
20170040333
Publication date
Feb 9, 2017
SanDisk Technologies, Inc.
Keita Kumamoto
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Contact Plug Extension for Bit Line Connection
Publication number
20170025354
Publication date
Jan 26, 2017
SanDisk Technologies, Inc.
Shunsuke Watanabe
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Source Line Formation and Structure
Publication number
20160336335
Publication date
Nov 17, 2016
SANDISK TECHNOLOGIES INC.
Shunsuke Akimoto
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Conductive Lines with Protective Sidewalls
Publication number
20160204059
Publication date
Jul 14, 2016
SANDISK TECHNOLOGIES INC.
Noritaka Fukuo
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Air Gaps Structures for Damascene Metal Patterning
Publication number
20160126130
Publication date
May 5, 2016
SANDISK TECHNOLOGIES INC.
Yuji Takahashi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Buried Etch Stop Layer for Damascene Bit Line Formation
Publication number
20160126179
Publication date
May 5, 2016
SANDISK TECHNOLOGIES INC.
Yuji Takahashi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Early Bit Line Air Gap Formation
Publication number
20160111326
Publication date
Apr 21, 2016
SANDISK TECHNOLOGIES INC.
Hiroto Ohori
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Double Trench Isolation
Publication number
20160111493
Publication date
Apr 21, 2016
SANDISK TECHNOLOGIES INC.
Katsuo Yamada
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Conductive Line Structure with Openings
Publication number
20160086848
Publication date
Mar 24, 2016
SANDISK TECHNOLOGIES INC.
Kiyokazu Shishido
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Contact Hole Collimation Using Etch-Resistant Walls
Publication number
20160035738
Publication date
Feb 4, 2016
SANDISK TECHNOLOGIES INC.
Tomoyasu Kakegawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
NAND Flash Memory Integrated Circuits and Processes with Controlled...
Publication number
20150380420
Publication date
Dec 31, 2015
SANDISK TECHNOLOGIES INC.
Eiichi Fujikura
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
BARRIER LAYER STACK FOR BIT LINE AIR GAP FORMATION
Publication number
20150332953
Publication date
Nov 19, 2015
SANDISK TECHNOLOGIES INC.
Takuya Futase
H01 - BASIC ELECTRIC ELEMENTS