Tamotsu OWADA

Person

Shinjuku, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 9,236,302
- Issue date Jan 12, 2016
- Fujitsu Semiconductor Limited
- Hikaru Ohira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing semiconductor device
- Patent number 9,123,728
- Issue date Sep 1, 2015
- Fujitsu Semiconductor Limited
- Takahiro Kono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method
- Patent number 9,087,873
- Issue date Jul 21, 2015
- Fujitsu Semiconductor Limited
- Tamotsu Owada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,916,423
- Issue date Dec 23, 2014
- Fujitsu Semiconductor Limited
- Tamotsu Owada
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Manufacturing method of semiconductor device, processing method of...
- Patent number 8,883,613
- Issue date Nov 11, 2014
- Fujitsu Semiconductor Limited
- Tamotsu Owada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon oxycarbide, growth method of silicon oxycarbide layer, semi...
- Patent number 8,778,814
- Issue date Jul 15, 2014
- Fujitsu Semiconductor Limited
- Tamotsu Owada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method for manufacturing semiconductor device
- Patent number 8,669,177
- Issue date Mar 11, 2014
- Fujitsu Semiconductor Limited
- Takahiro Kouno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating semiconductor device
- Patent number 8,604,552
- Issue date Dec 10, 2013
- Fujitsu Semiconductor Limited
- Tamotsu Owada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon oxycarbide, growth method of silicon oxycarbide layer, semi...
- Patent number 8,349,722
- Issue date Jan 8, 2013
- Fujitsu Semiconductor Limited
- Tamotsu Owada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 8,105,935
- Issue date Jan 31, 2012
- Fujitsu Semiconductor Limited
- Naoki Ohara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,026,164
- Issue date Sep 27, 2011
- Fujitsu Semiconductor Limited
- Satoshi Takesako
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,928,476
- Issue date Apr 19, 2011
- Fujitsu Semiconductor Limited
- Hiroshi Kudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device including forming two...
- Patent number 7,763,509
- Issue date Jul 27, 2010
- Fujitsu Semiconductor Limited
- Sergey Pidin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 7,749,897
- Issue date Jul 6, 2010
- Fujitsu Semiconductor Limited
- Ken Sugimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating film forming method capable of enhancing adhesion of sil...
- Patent number 7,642,185
- Issue date Jan 5, 2010
- Fujitsu Microelectronics Limited
- Tamotsu Owada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 7,579,277
- Issue date Aug 25, 2009
- Fujitsu Microelectronics Limited
- Tamotsu Owada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming insulating film, method for forming multilayer s...
- Patent number 7,541,296
- Issue date Jun 2, 2009
- Fujitsu Microelectronics Limited
- Tamotsu Owada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon oxycarbide, growth method of silicon oxycarbide layer, semi...
- Patent number 7,485,570
- Issue date Feb 3, 2009
- Fujitsu Limited
- Tamotsu Owada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device using low-K material as interlayer insulating...
- Patent number 7,256,118
- Issue date Aug 14, 2007
- Fujitsu Limited
- Shun-ichi Fukuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low dielectric constant film material, film and semiconductor devic...
- Patent number 7,235,866
- Issue date Jun 26, 2007
- Fujitsu Limited
- Yoshihiro Nakata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulating film forming method capable of enhancing adhesion of sil...
- Patent number 7,208,405
- Issue date Apr 24, 2007
- Fujitsu Limited
- Tamotsu Owada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low dielectric constant film material, film and semiconductor devic...
- Patent number 6,958,525
- Issue date Oct 25, 2005
- Fujitsu Limited
- Yoshihiro Nakata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon oxycarbide, growth method of silicon oxycarbide layer, semi...
- Patent number 6,949,830
- Issue date Sep 27, 2005
- Fujitsu Limited
- Tamotsu Owada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using low-k material as interlayer insulating...
- Patent number 6,943,431
- Issue date Sep 13, 2005
- Fujitsu Limited
- Shun-ichi Fukuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low dielectric constant film material, film and semiconductor devic...
- Patent number 6,613,834
- Issue date Sep 2, 2003
- Fujitsu Limited
- Yoshihiro Nakata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Excimer laser processing method and apparatus
- Patent number 5,386,430
- Issue date Jan 31, 1995
- Fujitsu Limited
- Yasuo Yamagishi
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Insulating material for wiring substrate and method of producing mu...
- Patent number 5,349,155
- Issue date Sep 20, 1994
- Fujitsu Limited
- Yasuo Yamagishi
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20150235901
- Publication date Aug 20, 2015
- FUJITSU SEMICONDUCTOR LIMITED
- Hikaru Ohira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20150069586
- Publication date Mar 12, 2015
- FUJITSU SEMICONDUCTOR LIMITED
- Tamotsu Owada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUPPORT SUBSTRATE-ATT...
- Publication number 20150014820
- Publication date Jan 15, 2015
- FUJITSU SEMICONDUCTOR LIMITED
- Tamotsu Owada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20140306339
- Publication date Oct 16, 2014
- FUJITSU SEMICONDUCTOR LIMITED
- Hikaru Ohira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20140131873
- Publication date May 15, 2014
- FUJITSU SEMICONDUCTOR LIMITED
- Takahiro Kouno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON OXYCARBIDE, GROWTH METHOD OF SILICON OXYCARBIDE LAYER, SEMI...
- Publication number 20130330912
- Publication date Dec 12, 2013
- FUJITSU SEMICONDUCTOR LIMITED
- Tamotsu Owada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20130320508
- Publication date Dec 5, 2013
- FUJITSU SEMICONDUCTOR LIMITED
- Tamotsu Owada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVI...
- Publication number 20130247825
- Publication date Sep 26, 2013
- FUJITSU SEMICONDUCTOR LIMITED
- Tamotsu Owada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, PROCESSING METHOD OF...
- Publication number 20130161795
- Publication date Jun 27, 2013
- FUJITSU SEMICONDUCTOR LIMITED
- Tamotsu Owada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20120322272
- Publication date Dec 20, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Tamotsu Owada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON OXYCARBIDE, GROWTH METHOD OF SILICON OXYCARBIDE LAYER, SEMI...
- Publication number 20120252227
- Publication date Oct 4, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Tamotsu Owada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVI...
- Publication number 20110244677
- Publication date Oct 6, 2011
- FUJITSU SEMICONDUCTOR LIMITED
- Tamotsu Owada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20110183515
- Publication date Jul 28, 2011
- FUJITSU SEMICONDUCTOR LIMITED
- Hiroshi Kudo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100164119
- Publication date Jul 1, 2010
- Fujitsu Microelectronics Limited
- Satoshi Takesako
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20100012991
- Publication date Jan 21, 2010
- Fujitsu Microelectronics Limited
- Tamotsu OWADA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20090278259
- Publication date Nov 12, 2009
- Fujitsu Microelectronics Limited
- Takahiro KOUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20090146309
- Publication date Jun 11, 2009
- Fujitsu Microelectronics Limited
- Hiroshi KUDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon oxycarbide, growth method of silicon oxycarbide layer, semi...
- Publication number 20090093130
- Publication date Apr 9, 2009
- Fujitsu Limited
- Tamotsu Owada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device
- Publication number 20080305645
- Publication date Dec 11, 2008
- FUJITSU LIMITED
- Ken Sugimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20080233734
- Publication date Sep 25, 2008
- FUJITSU LIMITED
- Naoki OHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device
- Publication number 20080124856
- Publication date May 29, 2008
- FUJITSU LIMITED
- Sergey Pidin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20080057717
- Publication date Mar 6, 2008
- Fujitsu Limited
- Tamotsu OWADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20070197032
- Publication date Aug 23, 2007
- FUJITSU LIMITED
- Tamotsu Owada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulating film forming method capable of enhancing adhesion of sil...
- Publication number 20070173054
- Publication date Jul 26, 2007
- FUJITSU LIMITED
- Tamotsu Owada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device
- Publication number 20070123035
- Publication date May 31, 2007
- FUJITSU LIMITED
- Ken Sugimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming SiC-based film and method for fabricating semico...
- Publication number 20060205193
- Publication date Sep 14, 2006
- FUJITSU LIMITED
- Ken Sugimoto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for forming insulating film, method for forming multilayer s...
- Publication number 20060178017
- Publication date Aug 10, 2006
- FUJITSU LIMITED
- Tamotsu Owada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor device
- Publication number 20060087041
- Publication date Apr 27, 2006
- FUJITSU LIMITED
- Shun-ichi Fukuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low dielectric constant film material, film and semiconductor devic...
- Publication number 20060022357
- Publication date Feb 2, 2006
- FUJITSU LIMITED
- Yoshihiro Nakata
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
Silicon oxycarbide, growth method of silicon oxycarbide layer, semi...
- Publication number 20050287790
- Publication date Dec 29, 2005
- FUJITSU LIMITED
- Tamotsu Owada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Tamotsu OWADA

Person

Patents Grantslast 30 patents

Semiconductor device and manufacturing method of semiconductor device

Semiconductor device and method for manufacturing semiconductor device

Semiconductor device manufacturing method

Semiconductor device and method of manufacturing the same

Manufacturing method of semiconductor device, processing method of...

Silicon oxycarbide, growth method of silicon oxycarbide layer, semi...

Semiconductor device and method for manufacturing semiconductor device

Semiconductor device and method for fabricating semiconductor device

Silicon oxycarbide, growth method of silicon oxycarbide layer, semi...

Method of manufacturing a semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Method of manufacturing semiconductor device including forming two...

Method of manufacturing semiconductor device

Insulating film forming method capable of enhancing adhesion of sil...

Semiconductor device and method for fabricating the same

Method for forming insulating film, method for forming multilayer s...

Silicon oxycarbide, growth method of silicon oxycarbide layer, semi...

Semiconductor device using low-K material as interlayer insulating...

Low dielectric constant film material, film and semiconductor devic...

Insulating film forming method capable of enhancing adhesion of sil...

Low dielectric constant film material, film and semiconductor devic...

Silicon oxycarbide, growth method of silicon oxycarbide layer, semi...

Semiconductor device using low-k material as interlayer insulating...

Low dielectric constant film material, film and semiconductor devic...

Excimer laser processing method and apparatus

Insulating material for wiring substrate and method of producing mu...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUPPORT SUBSTRATE-ATT...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SILICON OXYCARBIDE, GROWTH METHOD OF SILICON OXYCARBIDE LAYER, SEMI...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVI...

MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, PROCESSING METHOD OF...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

SILICON OXYCARBIDE, GROWTH METHOD OF SILICON OXYCARBIDE LAYER, SEMI...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVI...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Silicon oxycarbide, growth method of silicon oxycarbide layer, semi...

Method of manufacturing semiconductor device

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

Method of manufacturing semiconductor device

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Semiconductor device and method for fabricating the same

Insulating film forming method capable of enhancing adhesion of sil...

Method of manufacturing semiconductor device

Method for forming SiC-based film and method for fabricating semico...

Method for forming insulating film, method for forming multilayer s...

Semiconductor device

Low dielectric constant film material, film and semiconductor devic...

Silicon oxycarbide, growth method of silicon oxycarbide layer, semi...