Tan Leong Seng

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Shanghai, CN

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Patents Grantslast 30 patents

Information Patent Grant
Split dual gate field effect transistor
- Patent number 8,614,487
- Issue date Dec 24, 2013
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making split dual gate field effect transistor
- Patent number 8,093,114
- Issue date Jan 10, 2012
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making split dual gate field effect transistor
- Patent number 7,582,517
- Issue date Sep 1, 2009
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Method for Making Split Dual Gate Field Effect Transistor
- Publication number 20100087040
- Publication date Apr 8, 2010
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making split dual gate field effect transistor
- Publication number 20070287246
- Publication date Dec 13, 2007
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split dual gate field effect transistor
- Publication number 20070181917
- Publication date Aug 9, 2007
- Semiconductor Manufacturing International (Shanghai) Corporation
- Deyuan Xiao
- H01 - BASIC ELECTRIC ELEMENTS