Tatsuo FUJIMOTO

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Driver posture measurement device and vehicle control device
- Patent number 11,667,298
- Issue date Jun 6, 2023
- Mitsubishi Electric Corporation
- Tatsuo Fujimoto
- B60 - VEHICLES IN GENERAL
Information Patent Grant
Control device for an internal combustion engine
- Patent number 11,454,184
- Issue date Sep 27, 2022
- Mitsubishi Electric Corporation
- Tatsuo Fujimoto
- F02 - COMBUSTION ENGINES HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
Information Patent Grant
Epitaxial silicon carbide single crystal wafer and process for prod...
- Patent number 11,114,295
- Issue date Sep 7, 2021
- Showa Denko K.K.
- Takashi Aigo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Controller which determines a misfire for an internal combustion en...
- Patent number 10,989,627
- Issue date Apr 27, 2021
- Mitsubishi Electric Corporation
- Tatsuo Fujimoto
- G01 - MEASURING TESTING
Information Patent Grant
Epitaxial silicon carbide single crystal wafer and process for prod...
- Patent number 10,727,047
- Issue date Jul 28, 2020
- Showa Denko K.K.
- Takashi Aigo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing silicon carbide single crystal and silicon car...
- Patent number 10,711,369
- Issue date Jul 14, 2020
- Showa Denko K.K.
- Shinya Sato
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing epitaxial silicon carbide single crystal wafer
- Patent number 10,626,520
- Issue date Apr 21, 2020
- Showa Denko K.K.
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing epitaxial silicon carbide wafers
- Patent number 10,450,672
- Issue date Oct 22, 2019
- Showa Denko K.K.
- Takashi Aigo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth method for silicon carbide
- Patent number 10,435,813
- Issue date Oct 8, 2019
- Showa Denko K.K.
- Wataru Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide single crystal substrate and process for producing...
- Patent number 10,119,200
- Issue date Nov 6, 2018
- Showa Denko K.K.
- Shinya Sato
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon carbide single-crystal ingot and silic...
- Patent number 10,066,316
- Issue date Sep 4, 2018
- Showa Denko K.K.
- Komomo Tani
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing epitaxial silicon carbide wafer
- Patent number 9,957,639
- Issue date May 1, 2018
- Nippon Steel & Sumitomo Metal Corporation
- Takashi Aigo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low resistivity single crystal silicon carbide wafer
- Patent number 9,915,011
- Issue date Mar 13, 2018
- Nippon Steel & Sumitomo Metal Corporation
- Tatsuo Fujimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single-crystal silicon carbide and single-crystal silicon carbide w...
- Patent number 9,777,403
- Issue date Oct 3, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Masashi Nakabayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing epitaxial silicon carbide single crystal subs...
- Patent number 9,691,607
- Issue date Jun 27, 2017
- Nippon Steel & Sumitomo Metal Corporation
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide single crystal wafer and manufacturing method for same
- Patent number 9,234,297
- Issue date Jan 12, 2016
- Nippon Steel & Sumitomo Metal Corporation
- Shinya Sato
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus for manufacturing single-crystal silicon carbide
- Patent number 9,068,277
- Issue date Jun 30, 2015
- Nippon Steel & Sumitomo Metal Corporation
- Masashi Nakabayashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crucible vessel and crucible cover having grooves for producing sin...
- Patent number 8,936,680
- Issue date Jan 20, 2015
- Nippon Steel & Sumitomo Metal Corporation
- Masakazu Katsuno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production process of epitaxial silicon carbide single crystal subs...
- Patent number 8,927,396
- Issue date Jan 6, 2015
- Nippon Steel & Sumitomo Metal Corporation
- Takashi Aigo
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Epitaxial silicon carbide single crystal substrate and process for...
- Patent number 8,901,570
- Issue date Dec 2, 2014
- Nippon Steel & Sumitomo Metal Corporation
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Monocrystalline silicon carbide ingot, monocrystalline silicon carb...
- Patent number 8,795,624
- Issue date Aug 5, 2014
- Nippon Steel & Sumitomo Metal Corporation
- Masashi Nakabayashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Monocrystalline silicon carbide ingot, monocrystalline silicon carb...
- Patent number 8,673,254
- Issue date Mar 18, 2014
- Nippon Steel & Sumitomo Metal Corporation
- Masashi Nakabayashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon carbide single crystal, silicon carbide single crystal wafe...
- Patent number 8,491,719
- Issue date Jul 23, 2013
- Nippon Steel & Sumitomo Metal Corporation
- Masashi Nakabayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Monocrystalline silicon carbide ingot, monocrystalline silicon carb...
- Patent number 8,178,389
- Issue date May 15, 2012
- Nippon Steel Corporation
- Masashi Nakabayashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
SiC single-crystal substrate and method of producing SiC single-cry...
- Patent number 8,044,408
- Issue date Oct 25, 2011
- Nippon Steel Corporation
- Tatsuo Fujimoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single-crystal silicon carbide ingot, and substrate and epitaxial w...
- Patent number 7,972,704
- Issue date Jul 5, 2011
- Nippon Steel Corporation
- Noboru Ohtani
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon carbide single crystal and single crystal wafer
- Patent number 7,799,305
- Issue date Sep 21, 2010
- Nippon Steel Corporation
- Mitsuru Sawamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide single crystal, silicon carbide single crystal wafe...
- Patent number 7,794,842
- Issue date Sep 14, 2010
- Nippon Steel Corporation
- Masashi Nakabayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Rare earth magnets and method of producing same
- Patent number 5,201,963
- Issue date Apr 13, 1993
- Nippon Steel Corporation
- Toshio Mukai
- B22 - CASTING POWDER METALLURGY
Information Patent Grant
Method of making rare earth magnets
- Patent number 5,049,203
- Issue date Sep 17, 1991
- Nippon Steel Corporation
- Toshio Mukai
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...

Patents Applicationslast 30 patents

Information Patent Application
DRIVING-ASSISTANCE CONTROL APPARATUS
- Publication number 20220402488
- Publication date Dec 22, 2022
- Mitsubishi Electric Corporation
- Tatsuo Fujimoto
- B60 - VEHICLES IN GENERAL
Information Patent Application
DRIVER POSTURE MEASUREMENT DEVICE AND VEHICLE CONTROL DEVICE
- Publication number 20220161804
- Publication date May 26, 2022
- Mitsubishi Electric Corporation
- Tatsuo FUJIMOTO
- B60 - VEHICLES IN GENERAL
Information Patent Application
CONTROL DEVICE FOR AN INTERNAL COMBUSTION ENGINE
- Publication number 20200340415
- Publication date Oct 29, 2020
- Mitsubishi Electric Corporation
- Tatsuo FUJIMOTO
- F02 - COMBUSTION ENGINES HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
Information Patent Application
EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL WAFER AND PROCESS FOR PROD...
- Publication number 20200312656
- Publication date Oct 1, 2020
- SHOWA DENKO K.K.
- Takashi AIGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROLLER FOR INTERNAL COMBUSTION ENGINE
- Publication number 20190383704
- Publication date Dec 19, 2019
- Mitsubishi Electric Corporation
- Tatsuo FUJIMOTO
- G01 - MEASURING TESTING
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR PRODUCING...
- Publication number 20190024257
- Publication date Jan 24, 2019
- SHOWA DENKO K.K.
- Shinya SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL GROWTH METHOD FOR SILICON CARBIDE
- Publication number 20180266012
- Publication date Sep 20, 2018
- SHOWA DENKO K.K.
- Wataru ITO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL WAFER
- Publication number 20180216251
- Publication date Aug 2, 2018
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Takashi AIGO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SILICON CARBIDE SINGLE-CRYSTAL INGOT AND SILIC...
- Publication number 20180066380
- Publication date Mar 8, 2018
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Komomo TANI
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL WAFER AND PROCESS FOR PROD...
- Publication number 20170365463
- Publication date Dec 21, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Takashi AIGO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CAR...
- Publication number 20170342593
- Publication date Nov 30, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Shinya SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING EPITAXIAL SILICON CARBIDE WAFERS
- Publication number 20170159208
- Publication date Jun 8, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Takashi AIGO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING EPITAXIAL SILICON CARBIDE WAFER
- Publication number 20160251775
- Publication date Sep 1, 2016
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Takashi AIGO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SIC SINGLE-CRYSTAL SUBSTRATE FOR EPITAXIAL...
- Publication number 20150361585
- Publication date Dec 17, 2015
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Takashi AIGO
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR PRODUCING...
- Publication number 20150267319
- Publication date Sep 24, 2015
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Shinya Sato
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SILICON CARBIDE MONOCRYSTALLINE SUBSTRATE AND METHOD OF P...
- Publication number 20150075422
- Publication date Mar 19, 2015
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL WAFER AND MANUFACTURING METHOD FOR SAME
- Publication number 20140363607
- Publication date Dec 11, 2014
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Shinya Sato
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR P...
- Publication number 20130320357
- Publication date Dec 5, 2013
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION PROCESS OF EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBS...
- Publication number 20130217213
- Publication date Aug 22, 2013
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR...
- Publication number 20130049014
- Publication date Feb 28, 2013
- NIPPON STEEL CORPORATION
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBS...
- Publication number 20130029158
- Publication date Jan 31, 2013
- NIPPON STEEL CORPORATION
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Application
CRUCIBLE FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE, AND PRODUCTI...
- Publication number 20110308449
- Publication date Dec 22, 2011
- Masakazu Katsuno
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial silicon carbide monocrystalline substrate and method of p...
- Publication number 20110278596
- Publication date Nov 17, 2011
- Takashi Aigo
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL SILICON CARBIDE AND SINGLE-CRYSTAL SILICON CARBIDE W...
- Publication number 20110206929
- Publication date Aug 25, 2011
- Masashi Nakabayashi
- C30 - CRYSTAL GROWTH
Information Patent Application
MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARB...
- Publication number 20110180765
- Publication date Jul 28, 2011
- Masashi NAKABAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE-CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SIC SINGLE-CRY...
- Publication number 20100295059
- Publication date Nov 25, 2010
- NIPPON STEEL CORPORATION
- Tatsuo FUJIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE-CRYSTAL SILICON CARBIDE INGOT, AND SUBSTRATE AND EPITAXIAL W...
- Publication number 20100289033
- Publication date Nov 18, 2010
- Noboru Ohtani
- C30 - CRYSTAL GROWTH
Information Patent Application
MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARB...
- Publication number 20100147212
- Publication date Jun 17, 2010
- Masashi NAKABAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
Seed crystal consisting of silicon carbide single crystal and metho...
- Publication number 20100089311
- Publication date Apr 15, 2010
- NIPPON STEEL CORPORATION
- Noboru Ohtani
- C30 - CRYSTAL GROWTH
Information Patent Application
Seed crystal consisting of silicon carbide single crysatal and meth...
- Publication number 20100083897
- Publication date Apr 8, 2010
- NIPPON STEEL CORPORATION
- Noboru Ohtani
- C30 - CRYSTAL GROWTH

Tatsuo FUJIMOTO

Person

Patents Grantslast 30 patents

Driver posture measurement device and vehicle control device

Control device for an internal combustion engine

Epitaxial silicon carbide single crystal wafer and process for prod...

Controller which determines a misfire for an internal combustion en...

Epitaxial silicon carbide single crystal wafer and process for prod...

Method for producing silicon carbide single crystal and silicon car...

Method for producing epitaxial silicon carbide single crystal wafer

Method for producing epitaxial silicon carbide wafers

Epitaxial growth method for silicon carbide

Silicon carbide single crystal substrate and process for producing...

Method for producing silicon carbide single-crystal ingot and silic...

Method for producing epitaxial silicon carbide wafer

Low resistivity single crystal silicon carbide wafer

Single-crystal silicon carbide and single-crystal silicon carbide w...

Process for producing epitaxial silicon carbide single crystal subs...

Silicon carbide single crystal wafer and manufacturing method for same

Apparatus for manufacturing single-crystal silicon carbide

Crucible vessel and crucible cover having grooves for producing sin...

Production process of epitaxial silicon carbide single crystal subs...

Epitaxial silicon carbide single crystal substrate and process for...

Monocrystalline silicon carbide ingot, monocrystalline silicon carb...

Monocrystalline silicon carbide ingot, monocrystalline silicon carb...

Silicon carbide single crystal, silicon carbide single crystal wafe...

Monocrystalline silicon carbide ingot, monocrystalline silicon carb...

SiC single-crystal substrate and method of producing SiC single-cry...

Single-crystal silicon carbide ingot, and substrate and epitaxial w...

Silicon carbide single crystal and single crystal wafer

Silicon carbide single crystal, silicon carbide single crystal wafe...

Rare earth magnets and method of producing same

Method of making rare earth magnets

Patents Applicationslast 30 patents

DRIVING-ASSISTANCE CONTROL APPARATUS

DRIVER POSTURE MEASUREMENT DEVICE AND VEHICLE CONTROL DEVICE

CONTROL DEVICE FOR AN INTERNAL COMBUSTION ENGINE

EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL WAFER AND PROCESS FOR PROD...

CONTROLLER FOR INTERNAL COMBUSTION ENGINE

SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR PRODUCING...

EPITAXIAL GROWTH METHOD FOR SILICON CARBIDE

METHOD FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL WAFER

METHOD FOR PRODUCING SILICON CARBIDE SINGLE-CRYSTAL INGOT AND SILIC...

EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL WAFER AND PROCESS FOR PROD...

METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CAR...

METHOD FOR PRODUCING EPITAXIAL SILICON CARBIDE WAFERS

METHOD FOR PRODUCING EPITAXIAL SILICON CARBIDE WAFER

METHOD FOR MANUFACTURING SIC SINGLE-CRYSTAL SUBSTRATE FOR EPITAXIAL...

SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR PRODUCING...

EPITAXIAL SILICON CARBIDE MONOCRYSTALLINE SUBSTRATE AND METHOD OF P...

SILICON CARBIDE SINGLE CRYSTAL WAFER AND MANUFACTURING METHOD FOR SAME

EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR P...

PRODUCTION PROCESS OF EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBS...

EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND PROCESS FOR...

PROCESS FOR PRODUCING EPITAXIAL SILICON CARBIDE SINGLE CRYSTAL SUBS...

CRUCIBLE FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE, AND PRODUCTI...

Epitaxial silicon carbide monocrystalline substrate and method of p...

SINGLE-CRYSTAL SILICON CARBIDE AND SINGLE-CRYSTAL SILICON CARBIDE W...

MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARB...

SIC SINGLE-CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SIC SINGLE-CRY...

SINGLE-CRYSTAL SILICON CARBIDE INGOT, AND SUBSTRATE AND EPITAXIAL W...

MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARB...

Seed crystal consisting of silicon carbide single crystal and metho...

Seed crystal consisting of silicon carbide single crysatal and meth...