Tatsuya Asaka

Person

Suwa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Surface emitting semiconductor laser and its manufacturing process
- Patent number 5,625,637
- Issue date Apr 29, 1997
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface emission type semiconductor laser, method and apparatus for...
- Patent number 5,621,750
- Issue date Apr 15, 1997
- Seiko Epson Corporation
- Hideaki Iwano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making surface emission type semiconductor laser
- Patent number 5,587,335
- Issue date Dec 24, 1996
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface emission type semiconductor laser
- Patent number 5,537,666
- Issue date Jul 16, 1996
- Seiko Epson Coropration
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface emission type semiconductor laser
- Patent number 5,436,922
- Issue date Jul 25, 1995
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface emission type semiconductor laser
- Patent number 5,404,369
- Issue date Apr 4, 1995
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface emitting semiconductor laser and method of manufacture
- Patent number 5,375,133
- Issue date Dec 20, 1994
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making surface emission type semiconductor laser
- Patent number 5,356,832
- Issue date Oct 18, 1994
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface emission type semiconductor laser
- Patent number 5,317,584
- Issue date May 31, 1994
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface emission type semiconductor laser
- Patent number 5,295,148
- Issue date Mar 15, 1994
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching apparatus
- Patent number 5,236,537
- Issue date Aug 17, 1993
- Seiko Epson Corporation
- Tatsuya Asaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface emission type semiconductor laser
- Patent number 5,182,757
- Issue date Jan 26, 1993
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface emission type semiconductor laser
- Patent number 5,181,219
- Issue date Jan 19, 1993
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface emission type semiconductor laser
- Patent number 5,181,221
- Issue date Jan 19, 1993
- Seiko Epson Corporation
- Katsumi Mori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of anisotropic dry etching of thin film semiconductors
- Patent number 5,145,554
- Issue date Sep 8, 1992
- Seiko Epson Corporation
- Tetsuya Seki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of pretreatment and anisotropic dry etching of thin film sem...
- Patent number 5,133,830
- Issue date Jul 28, 1992
- Seiko Epson Corporation
- Tatsuya Asaka
- H01 - BASIC ELECTRIC ELEMENTS

Tatsuya Asaka

Person

Patents Grantslast 30 patents

Surface emitting semiconductor laser and its manufacturing process

Surface emission type semiconductor laser, method and apparatus for...

Method of making surface emission type semiconductor laser

Surface emission type semiconductor laser

Surface emission type semiconductor laser

Surface emission type semiconductor laser

Surface emitting semiconductor laser and method of manufacture

Method of making surface emission type semiconductor laser

Surface emission type semiconductor laser

Surface emission type semiconductor laser

Plasma etching apparatus

Surface emission type semiconductor laser

Surface emission type semiconductor laser

Surface emission type semiconductor laser

Method of anisotropic dry etching of thin film semiconductors

Method of pretreatment and anisotropic dry etching of thin film sem...