Te-Hsiung Lai

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuits employing always-on watchdog timer for providin...
- Patent number 12,176,889
- Issue date Dec 24, 2024
- Realtek Semiconductor Corp.
- Te-Lun Lai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Negative-capacitance and ferroelectric field-effect transistor (NCF...
- Patent number 12,136,659
- Issue date Nov 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 12,125,706
- Issue date Oct 22, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacture
- Patent number 12,033,853
- Issue date Jul 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dipole-engineered high-k gate dielectric and method forming same
- Patent number 12,020,941
- Issue date Jun 25, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Triple layer high-k gate dielectric stack for workfunction engineering
- Patent number 12,015,066
- Issue date Jun 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Yuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for adjusting target clock and wireless device thereof
- Patent number 11,864,143
- Issue date Jan 2, 2024
- Realtek Semiconductor Corp.
- Te-Lun Lai
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Semiconductor device and manufacturing method for the semiconductor...
- Patent number 11,848,370
- Issue date Dec 19, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacture
- Patent number 11,823,894
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of gap filling for semiconductor device
- Patent number 11,824,104
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative-capacitance and ferroelectric field-effect transistor (NCF...
- Patent number 11,817,489
- Issue date Nov 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructure field-effect transistor device and method of forming
- Patent number 11,791,216
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dipole-engineered high-k gate dielectric and method forming same
- Patent number 11,784,052
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative-capacitance and ferroelectric field-effect transistor (NCF...
- Patent number 11,777,017
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method for the semiconduc...
- Patent number 11,777,031
- Issue date Oct 3, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,710,665
- Issue date Jul 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method for the semiconductor...
- Patent number 11,309,398
- Issue date Apr 19, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative-capacitance and ferroelectric field-effect transistor (NCF...
- Patent number 11,264,489
- Issue date Mar 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and manufacturing method for the semiconduc...
- Patent number 11,257,950
- Issue date Feb 22, 2022
- Taiwan Semiconductor Manufacturing Company Ltd.
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative-capacitance and ferroelectric field-effect transistor (NCF...
- Patent number 11,171,219
- Issue date Nov 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture
- Patent number 11,101,180
- Issue date Aug 24, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods of manufacture
- Patent number 11,011,372
- Issue date May 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of gap filling for semiconductor device
- Patent number 10,985,266
- Issue date Apr 20, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Slot-in optical reproducing apparatus with a visualized indicator
- Patent number 7,404,198
- Issue date Jul 22, 2008
- Lite-On It Corp.
- Cheng-Fu Lee
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF GAP FILLING FOR SEMICONDUCTOR DEVICE
- Publication number 20240387704
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20240332010
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE DIELECTRIC LAYERS FOR STACKED MULTI-GATE DEVICE
- Publication number 20240313076
- Publication date Sep 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dipole-Engineered High-K Gate Dielectric and Method Forming Same
- Publication number 20240304449
- Publication date Sep 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Volumeless Threshold Voltage Tuning for Stacked Device Structures
- Publication number 20240290662
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yao-Teng CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS EMPLOYING ALWAYS-ON WATCHDOG TIMER FOR PROVIDIN...
- Publication number 20240120915
- Publication date Apr 11, 2024
- Realtek Semiconductor Corp.
- Te-Lun Lai
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR...
- Publication number 20240079472
- Publication date Mar 7, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN-YEN PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUC...
- Publication number 20230387298
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN-YEN PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE
- Publication number 20230386827
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Gap Filling for Semiconductor Device
- Publication number 20230387275
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIPLE LAYER HIGH-K GATE DIELECTRIC STACK FOR WORKFUNCTION ENGINEERING
- Publication number 20230378294
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Yuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Negative-Capacitance and Ferroelectric Field-Effect Transistor (NCF...
- Publication number 20230378310
- Publication date Nov 23, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanostructure Field-Effect Transistor Device and Method of Forming
- Publication number 20230369124
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE-CAPACITANCE AND FERROELECTRIC FIELD-EFFECT TRANSISTOR (NCF...
- Publication number 20230369472
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dipole-Engineered High-K Gate Dielectric and Method Forming Same
- Publication number 20230360918
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method for Forming the Same
- Publication number 20230343818
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shin-Hung Tsai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
- Publication number 20230335551
- Publication date Oct 19, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yao-Teng Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device having Doped Gate Dielectric Layer and Method...
- Publication number 20230317790
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yao-Teng Chuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20230317524
- Publication date Oct 5, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods of Forming the Same
- Publication number 20230223439
- Publication date Jul 13, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Doped Gate Dielectric Layer and Method...
- Publication number 20230178601
- Publication date Jun 8, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR...
- Publication number 20220223712
- Publication date Jul 14, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN-YEN PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUC...
- Publication number 20220181495
- Publication date Jun 9, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- CHUN-YEN PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE-CAPACITANCE AND FERROELECTRIC FIELD-EFFECT TRANSISTOR (NCF...
- Publication number 20220149182
- Publication date May 12, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanostructure Field-Effect Transistor Device and Method of Forming
- Publication number 20220084889
- Publication date Mar 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Negative-Capacitance and Ferroelectric Field-Effect Transistor (NCF...
- Publication number 20220059671
- Publication date Feb 24, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Triple Layer High-K Gate Dielectric Stack for Workfunction Engineering
- Publication number 20210399104
- Publication date Dec 23, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Yuan Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacture
- Publication number 20210375690
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufactuing Co., Ltd.
- Chun-Yen Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dipole-Engineered High-K Gate Dielectric and Method Forming Same
- Publication number 20210375629
- Publication date Dec 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Te-Yang Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR...
- Publication number 20210313440
- Publication date Oct 7, 2021
- Taiwan Semiconductor Manufacturing Company Ltd.
- CHUN-YEN PENG
- H01 - BASIC ELECTRIC ELEMENTS

Te-Hsiung Lai

Person

Patents Grantslast 30 patents

Integrated circuits employing always-on watchdog timer for providin...

Negative-capacitance and ferroelectric field-effect transistor (NCF...

Semiconductor device and method of manufacture

Semiconductor devices and methods of manufacture

Dipole-engineered high-k gate dielectric and method forming same

Triple layer high-k gate dielectric stack for workfunction engineering

Method for adjusting target clock and wireless device thereof

Semiconductor device and manufacturing method for the semiconductor...

Semiconductor devices and methods of manufacture

Method of gap filling for semiconductor device

Negative-capacitance and ferroelectric field-effect transistor (NCF...

Nanostructure field-effect transistor device and method of forming

Dipole-engineered high-k gate dielectric and method forming same

Negative-capacitance and ferroelectric field-effect transistor (NCF...

Semiconductor structure and manufacturing method for the semiconduc...

Semiconductor device and method of manufacture

Semiconductor device and manufacturing method for the semiconductor...

Negative-capacitance and ferroelectric field-effect transistor (NCF...

Semiconductor structure and manufacturing method for the semiconduc...

Negative-capacitance and ferroelectric field-effect transistor (NCF...

Semiconductor device and method of manufacture

Semiconductor devices and methods of manufacture

Method of gap filling for semiconductor device

Slot-in optical reproducing apparatus with a visualized indicator

Patents Applicationslast 30 patents

METHOD OF GAP FILLING FOR SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

GATE DIELECTRIC LAYERS FOR STACKED MULTI-GATE DEVICE

Dipole-Engineered High-K Gate Dielectric and Method Forming Same

Volumeless Threshold Voltage Tuning for Stacked Device Structures

INTEGRATED CIRCUITS EMPLOYING ALWAYS-ON WATCHDOG TIMER FOR PROVIDIN...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUC...

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

Method of Gap Filling for Semiconductor Device

TRIPLE LAYER HIGH-K GATE DIELECTRIC STACK FOR WORKFUNCTION ENGINEERING

Negative-Capacitance and Ferroelectric Field-Effect Transistor (NCF...

Nanostructure Field-Effect Transistor Device and Method of Forming

NEGATIVE-CAPACITANCE AND FERROELECTRIC FIELD-EFFECT TRANSISTOR (NCF...

Dipole-Engineered High-K Gate Dielectric and Method Forming Same

Semiconductor Device and Method for Forming the Same

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

Semiconductor Device having Doped Gate Dielectric Layer and Method...

Semiconductor Device and Method of Manufacture

Semiconductor Devices and Methods of Forming the Same

Semiconductor Device Having Doped Gate Dielectric Layer and Method...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SEMICONDUC...

NEGATIVE-CAPACITANCE AND FERROELECTRIC FIELD-EFFECT TRANSISTOR (NCF...

Nanostructure Field-Effect Transistor Device and Method of Forming

Negative-Capacitance and Ferroelectric Field-Effect Transistor (NCF...

Triple Layer High-K Gate Dielectric Stack for Workfunction Engineering

Semiconductor Device and Method of Manufacture

Dipole-Engineered High-K Gate Dielectric and Method Forming Same

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR...