Ted Guo

Person

Mountain View, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gas line weldment design and process for CVD aluminum
- Patent number 9,593,417
- Issue date Mar 14, 2017
- Applied Materials, Inc.
- Wei Ti Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Sputtering target having increased life and sputtering uniformity
- Patent number 8,968,536
- Issue date Mar 3, 2015
- Applied Materials, Inc.
- Adolph Miller Allen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Gas line weldment design and process for CVD aluminum
- Patent number 8,535,443
- Issue date Sep 17, 2013
- Applied Materials, Inc.
- Wei Ti Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Aluminum contact integration on cobalt silicide junction
- Patent number 7,867,900
- Issue date Jan 11, 2011
- Applied Materials, Inc.
- Wei Ti Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unique passivation technique for a CVD blocker plate to prevent par...
- Patent number 7,857,947
- Issue date Dec 28, 2010
- Applied Materials, Inc.
- Alan A. Ritchie
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Deposition processes for titanium nitride barrier and aluminum
- Patent number 7,824,743
- Issue date Nov 2, 2010
- Applied Materials, Inc.
- Wei Ti Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Aluminum sputtering while biasing wafer
- Patent number 7,378,002
- Issue date May 27, 2008
- Applied Materials, Inc.
- Wei Ti Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Multi-track magnetron exhibiting more uniform deposition and reduce...
- Patent number 7,186,319
- Issue date Mar 6, 2007
- Applied Materials, Inc.
- Hong S. Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully planarized dual damascene metallization using copper line int...
- Patent number 7,112,528
- Issue date Sep 26, 2006
- Applied Materials, Inc.
- Liang-Yuh Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature integrated metallization process and apparatus
- Patent number 6,743,714
- Issue date Jun 1, 2004
- Applied Materials, Inc.
- Roderick Craig Mosely
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low temperature integrated metallization process and apparatus
- Patent number 6,726,776
- Issue date Apr 27, 2004
- Applied Materials, Inc.
- Roderick Craig Mosely
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CVD-PVD deposition process
- Patent number 6,716,733
- Issue date Apr 6, 2004
- Applied Materials, Inc.
- Wei Ti Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma-enhanced chemical vapor deposition of a metal nitride layer
- Patent number 6,656,831
- Issue date Dec 2, 2003
- Applied Materials, Inc.
- Wei Ti Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Hole-filling technique using CVD aluminum and PVD aluminum integration
- Patent number 6,605,531
- Issue date Aug 12, 2003
- Applied Materials, Inc.
- Ted Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully planarized dual damascene metallization using copper line int...
- Patent number 6,537,905
- Issue date Mar 25, 2003
- Applied Materials, Inc.
- Liang-Yuh Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liner materials
- Patent number 6,528,180
- Issue date Mar 4, 2003
- Applied Materials, Inc.
- Wei Ti Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selective formation of a barrier layer for a contact leve...
- Patent number 6,518,176
- Issue date Feb 11, 2003
- Ted Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming aluminum lines over aluminum-filled vias in a se...
- Patent number 6,509,274
- Issue date Jan 21, 2003
- Applied Materials, Inc.
- Ted Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single step process for blanket-selective CVD aluminum deposition
- Patent number 6,458,684
- Issue date Oct 1, 2002
- Applied Materials, Inc.
- Ted Guo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semi-selective chemical vapor deposition
- Patent number 6,430,458
- Issue date Aug 6, 2002
- Applied Materials, Inc.
- Roderick Craig Mosely
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature integrated metallization process and apparatus
- Patent number 6,355,560
- Issue date Mar 12, 2002
- Applied Materials, Inc.
- Roderick Craig Mosely
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Dual damascene metallization
- Patent number 6,207,222
- Issue date Mar 27, 2001
- Applied Materials, Inc.
- Liang-Yuh Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization process and method
- Patent number 6,169,030
- Issue date Jan 2, 2001
- Applied Materials, Inc.
- Mehul B. Naik
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Low temperature integrated via and trench fill process and apparatus
- Patent number 6,139,697
- Issue date Oct 31, 2000
- Applied Materials, Inc.
- Liang-Yuh Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated CVD/PVD Al planarization using ultra-thin nucleation layers
- Patent number 6,139,905
- Issue date Oct 31, 2000
- Applied Materials, Inc.
- Liang-Yuh Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deposition film orientation and reflectivity improvement using a se...
- Patent number 6,120,844
- Issue date Sep 19, 2000
- Applied Materials, Inc.
- Liang Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
In-situ capped aluminum plug (CAP) process using selective CVD AL f...
- Patent number 6,110,828
- Issue date Aug 29, 2000
- Applied Materials, Inc.
- Ted Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermal post-deposition treatment of halogen-doped films to improve...
- Patent number 6,079,354
- Issue date Jun 27, 2000
- Applied Materials, Inc.
- Ted Guo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Integrated nitrogen-treated titanium layer to prevent interaction o...
- Patent number 6,080,665
- Issue date Jun 27, 2000
- Applied Materials, Inc.
- Liang-Yuh Chen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Single step process for blanket-selective CVD aluminum deposition
- Patent number 6,077,781
- Issue date Jun 20, 2000
- Applied Materials, Inc.
- Ted Guo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
GAS LINE WELDMENT DESIGN AND PROCESS FOR CVD ALUMINUM
- Publication number 20140053776
- Publication date Feb 27, 2014
- Applied Materials, Inc.
- Wei Ti Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ALUMINUM CONTACT INTEGRATION ON COBALT SILICIDE JUNCTION
- Publication number 20090087983
- Publication date Apr 2, 2009
- APPLIED MATERIALS, INC.
- WEI TI LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEPOSITION PROCESSES FOR TITANIUM NITRIDE BARRIER AND ALUMINUM
- Publication number 20090087585
- Publication date Apr 2, 2009
- WEI TI LEE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SPUTTERING TARGET HAVING INCREASED LIFE AND SPUTTERING UNIFORMITY
- Publication number 20080308416
- Publication date Dec 18, 2008
- APPLIED MATERIALS, INC.
- Adolph Miller Allen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Aluminum sputtering while biasing wafer
- Publication number 20070045103
- Publication date Mar 1, 2007
- APPLIED MATERIALS, INC.
- Wei Ti Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GAS LINE WELDMENT DESIGN AND PROCESS FOR CVD ALUMINUM
- Publication number 20070023144
- Publication date Feb 1, 2007
- APPLIED MATERIALS, INC.
- Wei Ti Lee
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
UNIQUE PASSIVATION TECHNIQUE FOR A CVD BLOCKER PLATE TO PREVENT PAR...
- Publication number 20070022952
- Publication date Feb 1, 2007
- Alan A. Ritchie
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Multi-track magnetron exhibiting more uniform deposition and reduce...
- Publication number 20060144703
- Publication date Jul 6, 2006
- Hong S. Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CVD-PVD deposition process
- Publication number 20030228746
- Publication date Dec 11, 2003
- APPLIED MATERIALS, INC.
- Wei Ti Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fully planarized dual damascene metallization using copper line int...
- Publication number 20030161943
- Publication date Aug 28, 2003
- APPLIED MATERIALS, INC.
- Liang-Yuh Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low temperature integrated metallization process and apparatus
- Publication number 20020102842
- Publication date Aug 1, 2002
- APPLIED MATERIALS, INC.
- Roderick Craig Mosley
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Single step process for blanket-selective cvd aluminum deposition
- Publication number 20020068427
- Publication date Jun 6, 2002
- Ted Guo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CONTACT LEVEL VIA AND METHOD OF SELECTIVE FORMATION OF A BARRIER LA...
- Publication number 20010001503
- Publication date May 24, 2001
- TED GUO
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Gas line weldment design and process for CVD aluminum

Sputtering target having increased life and sputtering uniformity

Gas line weldment design and process for CVD aluminum

Aluminum contact integration on cobalt silicide junction

Unique passivation technique for a CVD blocker plate to prevent par...

Deposition processes for titanium nitride barrier and aluminum

Aluminum sputtering while biasing wafer

Multi-track magnetron exhibiting more uniform deposition and reduce...

Fully planarized dual damascene metallization using copper line int...

Low temperature integrated metallization process and apparatus

Low temperature integrated metallization process and apparatus

CVD-PVD deposition process

Plasma-enhanced chemical vapor deposition of a metal nitride layer

Hole-filling technique using CVD aluminum and PVD aluminum integration

Fully planarized dual damascene metallization using copper line int...

Liner materials

Method of selective formation of a barrier layer for a contact leve...

Method for forming aluminum lines over aluminum-filled vias in a se...

Single step process for blanket-selective CVD aluminum deposition

Semi-selective chemical vapor deposition

Low temperature integrated metallization process and apparatus

Dual damascene metallization

Metallization process and method

Low temperature integrated via and trench fill process and apparatus

Integrated CVD/PVD Al planarization using ultra-thin nucleation layers

Deposition film orientation and reflectivity improvement using a se...

In-situ capped aluminum plug (CAP) process using selective CVD AL f...

Thermal post-deposition treatment of halogen-doped films to improve...

Integrated nitrogen-treated titanium layer to prevent interaction o...

Single step process for blanket-selective CVD aluminum deposition

Patents Applicationslast 30 patents

GAS LINE WELDMENT DESIGN AND PROCESS FOR CVD ALUMINUM

ALUMINUM CONTACT INTEGRATION ON COBALT SILICIDE JUNCTION

DEPOSITION PROCESSES FOR TITANIUM NITRIDE BARRIER AND ALUMINUM

SPUTTERING TARGET HAVING INCREASED LIFE AND SPUTTERING UNIFORMITY

Aluminum sputtering while biasing wafer

GAS LINE WELDMENT DESIGN AND PROCESS FOR CVD ALUMINUM

UNIQUE PASSIVATION TECHNIQUE FOR A CVD BLOCKER PLATE TO PREVENT PAR...

Multi-track magnetron exhibiting more uniform deposition and reduce...

CVD-PVD deposition process

Fully planarized dual damascene metallization using copper line int...

Low temperature integrated metallization process and apparatus

Single step process for blanket-selective cvd aluminum deposition

CONTACT LEVEL VIA AND METHOD OF SELECTIVE FORMATION OF A BARRIER LA...