Teemu Lang

Person

Helsinki, FI

People

Patents Grantslast 30 patents

Information Patent Grant
Deposition of carbon- and transition metal-containing thin films
- Patent number 7,198,820
- Issue date Apr 3, 2007
- Planar Systems, Inc.
- Kari Härkönen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Diaphragm valve for atomic layer deposition
- Patent number 7,191,793
- Issue date Mar 20, 2007
- Planar Systems, Inc.
- Jarmo Ilmari Maula
- F16 - ENGINEERING ELEMENTS AND UNITS GENERAL MEASURES FOR PRODUCING AND MAINT...
Information Patent Grant
Transition metal alloys for use as a gate electrode and devices inc...
- Patent number 7,193,253
- Issue date Mar 20, 2007
- Intel Corporation
- Mark Doczy
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Precursor material delivery system for atomic layer deposition
- Patent number 7,141,095
- Issue date Nov 28, 2006
- Planar Systems, Inc.
- Bradley J. Aitchison
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Transition metal alloys for use as a gate electrode and devices inc...
- Patent number 7,030,430
- Issue date Apr 18, 2006
- Intel Corporation
- Mark Doczy
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Diaphragm valve with reliability enhancements for atomic layer depo...
- Patent number 7,021,330
- Issue date Apr 4, 2006
- Planar Systems, Inc.
- Jarmo Ilmari Maula
- F16 - ENGINEERING ELEMENTS AND UNITS GENERAL MEASURES FOR PRODUCING AND MAINT...
Information Patent Grant
High-speed diaphragm valve for atomic layer deposition
- Patent number 6,941,963
- Issue date Sep 13, 2005
- Planar Systems, Inc.
- Jarmo Ilmari Maula
- F16 - ENGINEERING ELEMENTS AND UNITS GENERAL MEASURES FOR PRODUCING AND MAINT...
Information Patent Grant
Diaphragm valve for high-temperature precursor supply in atomic lay...
- Patent number 6,907,897
- Issue date Jun 21, 2005
- Planar Systems, Inc.
- Jarmo Ilmari Maula
- F16 - ENGINEERING ELEMENTS AND UNITS GENERAL MEASURES FOR PRODUCING AND MAINT...

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFAC...
- Publication number 20120064700
- Publication date Mar 15, 2012
- Maxim Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transition metal alloys for use as a gate electrode and devices inc...
- Publication number 20110097858
- Publication date Apr 28, 2011
- Mark Doczy
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
Semiconductor Substrate, Semiconductor Device and Method of Manufac...
- Publication number 20080308841
- Publication date Dec 18, 2008
- Maxim Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECURSOR MATERIAL DELIVERY SYSTEM WITH STAGING VOLUME FOR ATOMIC L...
- Publication number 20070117383
- Publication date May 24, 2007
- Planar Systems, Inc.
- Bradley J. Aitchison
- C30 - CRYSTAL GROWTH
Information Patent Application
Transition metal alloys for use a gate electrode and device incorpo...
- Publication number 20070096163
- Publication date May 3, 2007
- Mark Doczy
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
PRECURSOR MATERIAL DELIVERY SYSTEM WITH THERMAL ENHANCEMENTS FOR AT...
- Publication number 20070089674
- Publication date Apr 26, 2007
- Planar Systems, Inc.
- Bradley J. Aitchison
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAPHRAGM VALVE FOR ATOMIC LAYER DEPOSITION
- Publication number 20060174945
- Publication date Aug 10, 2006
- Planar Systems, Inc.
- Jarmo Ilmari Maula
- F16 - ENGINEERING ELEMENTS AND UNITS GENERAL MEASURES FOR PRODUCING AND MAINT...
Information Patent Application
Transition metal alloys for use as a gate electrode and devices inc...
- Publication number 20050280050
- Publication date Dec 22, 2005
- Mark Doczy
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
Transition metal alloys for use as a gate electrode and devices inc...
- Publication number 20050037557
- Publication date Feb 17, 2005
- Mark Doczy
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
High-speed diaphragm valve for atomic layer deposition
- Publication number 20050011555
- Publication date Jan 20, 2005
- Jarmo Ilmari Maula
- F16 - ENGINEERING ELEMENTS AND UNITS GENERAL MEASURES FOR PRODUCING AND MAINT...
Information Patent Application
Diaphragm valve with reliability enhancements for atomic layer depo...
- Publication number 20040262562
- Publication date Dec 30, 2004
- Jarmo Ilmari Maula
- F16 - ENGINEERING ELEMENTS AND UNITS GENERAL MEASURES FOR PRODUCING AND MAINT...
Information Patent Application
Diaphragm valve for high-temperature precursor supply in atomic lay...
- Publication number 20040261850
- Publication date Dec 30, 2004
- Jarmo Ilmari Maula
- F16 - ENGINEERING ELEMENTS AND UNITS GENERAL MEASURES FOR PRODUCING AND MAINT...
Information Patent Application
Deposition of carbon-and transition metal-containing thin films
- Publication number 20040208994
- Publication date Oct 21, 2004
- Planar Systems, Inc.
- Kari Harkonen
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Precursor material delivery system for atomic layer deposition
- Publication number 20040124131
- Publication date Jul 1, 2004
- Bradley J. Aitchison
- C30 - CRYSTAL GROWTH

Person

Patents Grantslast 30 patents

Deposition of carbon- and transition metal-containing thin films

Diaphragm valve for atomic layer deposition

Transition metal alloys for use as a gate electrode and devices inc...

Precursor material delivery system for atomic layer deposition

Transition metal alloys for use as a gate electrode and devices inc...

Diaphragm valve with reliability enhancements for atomic layer depo...

High-speed diaphragm valve for atomic layer deposition

Diaphragm valve for high-temperature precursor supply in atomic lay...

Patents Applicationslast 30 patents

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFAC...

Transition metal alloys for use as a gate electrode and devices inc...

Semiconductor Substrate, Semiconductor Device and Method of Manufac...

PRECURSOR MATERIAL DELIVERY SYSTEM WITH STAGING VOLUME FOR ATOMIC L...

Transition metal alloys for use a gate electrode and device incorpo...

PRECURSOR MATERIAL DELIVERY SYSTEM WITH THERMAL ENHANCEMENTS FOR AT...

DIAPHRAGM VALVE FOR ATOMIC LAYER DEPOSITION

Transition metal alloys for use as a gate electrode and devices inc...

Transition metal alloys for use as a gate electrode and devices inc...

High-speed diaphragm valve for atomic layer deposition

Diaphragm valve with reliability enhancements for atomic layer depo...

Diaphragm valve for high-temperature precursor supply in atomic lay...

Deposition of carbon-and transition metal-containing thin films

Precursor material delivery system for atomic layer deposition