Tejas Krishnamohan

Person

Palo Alto, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
In-field block retiring
- Patent number 8,767,467
- Issue date Jul 1, 2014
- Micron Technology, Inc.
- Krishna K. Parat
- G11 - INFORMATION STORAGE
Information Patent Grant
In-field block retiring
- Patent number 8,514,624
- Issue date Aug 20, 2013
- Micron Technology, Inc.
- Krishna K. Parat
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells containing charge-trapping zones
- Patent number 8,228,743
- Issue date Jul 24, 2012
- Micron Technology, Inc.
- Kyu S. Min
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Floating gate structures
- Patent number 7,989,289
- Issue date Aug 2, 2011
- Intel Corporation
- Tejas Krishnamohan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells, electronic systems, methods of forming memory cells,...
- Patent number 7,898,850
- Issue date Mar 1, 2011
- Micron Technology, Inc.
- Kyu S. Min
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device with high on current and low leakage
- Patent number 7,728,387
- Issue date Jun 1, 2010
- The Board of Trustees of the Leland Stanford Junior University
- Tejas Krishnamohan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
IN-FIELD BLOCK RETIRING
- Publication number 20130332769
- Publication date Dec 12, 2013
- Micron Technology, Inc.
- Krishna K. Parat
- G11 - INFORMATION STORAGE
Information Patent Application
IN-FIELD BLOCK RETIRING
- Publication number 20120327713
- Publication date Dec 27, 2012
- Micron Technology, Inc.
- Krishna K. Parat
- G11 - INFORMATION STORAGE
Information Patent Application
Flash memory with partially removed blocking dielectric in the word...
- Publication number 20110147827
- Publication date Jun 23, 2011
- Fatma Arzum Simsek-Ege
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells
- Publication number 20110133268
- Publication date Jun 9, 2011
- Micron Technology, Inc.
- Kyu S. Min
- G11 - INFORMATION STORAGE
Information Patent Application
GRADED OXY-NITRIDE TUNNEL BARRIER
- Publication number 20090321809
- Publication date Dec 31, 2009
- Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING GATE STRUCTURES
- Publication number 20090283817
- Publication date Nov 19, 2009
- Tejas Krishnamohan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells, Electronic Systems, Methods Of Forming Memory Cells,...
- Publication number 20090097320
- Publication date Apr 16, 2009
- Kyu S. Min
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY CELL WITH MULTI-LAYER BLOCKING DIELECTRIC
- Publication number 20090001443
- Publication date Jan 1, 2009
- Intel Corporation
- Tejas Krishnamohan
- H01 - BASIC ELECTRIC ELEMENTS

Tejas Krishnamohan

Person

Patents Grantslast 30 patents

In-field block retiring

In-field block retiring

Memory cells containing charge-trapping zones

Floating gate structures

Memory cells, electronic systems, methods of forming memory cells,...

Semiconductor device with high on current and low leakage

Patents Applicationslast 30 patents

IN-FIELD BLOCK RETIRING

IN-FIELD BLOCK RETIRING

Flash memory with partially removed blocking dielectric in the word...

Memory Cells

GRADED OXY-NITRIDE TUNNEL BARRIER

FLOATING GATE STRUCTURES

Memory Cells, Electronic Systems, Methods Of Forming Memory Cells,...

NON-VOLATILE MEMORY CELL WITH MULTI-LAYER BLOCKING DIELECTRIC