Teruhito Ohnishi

Person

Toyama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Inductor and method for fabricating the same
- Patent number 7,808,358
- Issue date Oct 5, 2010
- Panasonic Corporation
- Atsushi Nakamura
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Heterojunction biploar transistor and method for manufacturing same
- Patent number 7,719,031
- Issue date May 18, 2010
- Panasonic Corporation
- Tohru Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor and method for fabricating the same
- Patent number 7,465,969
- Issue date Dec 16, 2008
- Panasonic Corporation
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,145,168
- Issue date Dec 5, 2006
- Matsushita Electric Industrial Co., Ltd.
- Yoshihiro Hara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor having reduced driving voltage re...
- Patent number 7,135,721
- Issue date Nov 14, 2006
- Matsushita Electric Industrial Co., Ltd.
- Kenji Toyoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of estimating substrate temperature
- Patent number 7,129,168
- Issue date Oct 31, 2006
- Matsushita Electric Industrial Co., Ltd.
- Katsuya Nozawa
- G01 - MEASURING TESTING
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 7,109,095
- Issue date Sep 19, 2006
- Matsushita Electric Industrial Co., Ltd.
- Hidenori Notake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor and method for fabricating the same
- Patent number 7,091,099
- Issue date Aug 15, 2006
- Matsushita Electric Industrial Co., Ltd.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor device having phosphorous
- Patent number 7,049,681
- Issue date May 23, 2006
- Matsushita Electric Industrial Co., Ltd.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing semiconductor crystal
- Patent number 6,987,072
- Issue date Jan 17, 2006
- Matsushita Electric Industrial Co., Ltd.
- Yoshihiko Kanzawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor and fabrication method thereof
- Patent number 6,939,772
- Issue date Sep 6, 2005
- Matsushita Electric Industrial Co., Ltd.
- Akira Asai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a bipolar transistor utilizing a dry etching...
- Patent number 6,927,118
- Issue date Aug 9, 2005
- Matsushita Electric Industrial Co., Ltd.
- Ken Idota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,917,075
- Issue date Jul 12, 2005
- Matsushita Electric Industrial Co., Ltd.
- Akira Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable capacitance device and process for manufacturing the same
- Patent number 6,867,107
- Issue date Mar 15, 2005
- Matsushita Electric Industrial Co., Ltd.
- Akira Asai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,861,316
- Issue date Mar 1, 2005
- Matsushita Electric Industrial Co., Ltd.
- Yoshihiro Hara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,847,063
- Issue date Jan 25, 2005
- Matsushita Electric Industrial Co., Ltd.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,847,062
- Issue date Jan 25, 2005
- Matsushita Electric Industrial Co., Ltd.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor crystal
- Patent number 6,838,395
- Issue date Jan 4, 2005
- Matsushita Electric Industrial Co., Ltd.
- Yoshihiko Kanzawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor and method manufacture thereof
- Patent number 6,828,602
- Issue date Dec 7, 2004
- Matsushita Electric Industrial Co., Ltd.
- Akira Asai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device comprising a bipolar...
- Patent number 6,800,532
- Issue date Oct 5, 2004
- Matsushita Electric Industrial Co., Ltd.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 6,759,697
- Issue date Jul 6, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kenji Toyoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor device having phosphorous
- Patent number 6,674,149
- Issue date Jan 6, 2004
- Matsushita Electric Industrial Co., Ltd.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,642,607
- Issue date Nov 4, 2003
- Matsushita Electric Industrial Co., Ltd.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 6,620,665
- Issue date Sep 16, 2003
- Matsushita Electric Industrial Co., Ltd.
- Gaku Sugahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,399,993
- Issue date Jun 4, 2002
- Matsushita Electric Industrial Co., Ltd.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for cleaning a silicon substrate
- Patent number 6,214,126
- Issue date Apr 10, 2001
- Matsushita Electric Industrial Co., Ltd.
- Yuichi Miyoshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,500,379
- Issue date Mar 19, 1996
- Matsushita Electric Industrial Co., Ltd.
- Yoshinori Odake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabrication method
- Patent number 5,472,826
- Issue date Dec 5, 1995
- Matsushita Electric Industrial Co., Ltd.
- Masayuki Endo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and process
- Patent number 5,449,934
- Issue date Sep 12, 1995
- Matsushita Electric Industrial Co., Ltd.
- Tomofumi Shono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and process
- Patent number 5,365,095
- Issue date Nov 15, 1994
- Matsushita Electric Industrial Co., Ltd.
- Tomofumi Shono
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BIPOLAR TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20100283084
- Publication date Nov 11, 2010
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDUCTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20090273429
- Publication date Nov 5, 2009
- Atsushi NAKAMURA
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Heterojunction bipolar transistor and method for manufacturing same
- Publication number 20070085167
- Publication date Apr 19, 2007
- Matsushita Electric Industrial Co., Ltd.
- Tohru Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor and method for fabricating the same
- Publication number 20060226446
- Publication date Oct 12, 2006
- Matsushita Electric Industrial Co., Ltd.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming semiconductor crystal
- Publication number 20060225642
- Publication date Oct 12, 2006
- Yoshihiko Kanzawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of estimating substrate temperature
- Publication number 20060126701
- Publication date Jun 15, 2006
- Matsushita Electric Industrial Co., Ltd.
- Katsuya Nozawa
- G01 - MEASURING TESTING
Information Patent Application
Method for fabricating a semiconductor crystal
- Publication number 20050092230
- Publication date May 5, 2005
- Matsushita Electric Industrial Co., Ltd.
- Yoshihiko Kanzawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20050087803
- Publication date Apr 28, 2005
- Matsushita Electric Industrial Co., Ltd.
- Yoshihiro Hara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20050082571
- Publication date Apr 21, 2005
- Matsushita Electric Industrial Co., Ltd.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hetero bipolar transistor
- Publication number 20040256635
- Publication date Dec 23, 2004
- Matsushita Electric Industrial Co., Ltd.
- Tohru Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor and fabrication method thereof
- Publication number 20040251473
- Publication date Dec 16, 2004
- Matsushita Electric Industrial Co., Ltd.
- Akira Asai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transistor
- Publication number 20040232441
- Publication date Nov 25, 2004
- Matsushita Electric Industrial Co., Ltd.
- Kenji Toyoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor and method for fabricating the same
- Publication number 20040195655
- Publication date Oct 7, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20040142522
- Publication date Jul 22, 2004
- Matsushita Electric Industrial Co., Ltd.
- Akira Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Variable capacitance device and process for manufacturing the same
- Publication number 20040094792
- Publication date May 20, 2004
- Matsushita Electric Industrial Co., Ltd.
- Asai Akira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and fabrication method thereof
- Publication number 20040092076
- Publication date May 13, 2004
- Matsushita Electric Industrial Co., Ltd.
- Ken Idota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor device having phosphorous
- Publication number 20040089918
- Publication date May 13, 2004
- Matsushita Electric Industrial Co., Ltd.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20040065878
- Publication date Apr 8, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20040065875
- Publication date Apr 8, 2004
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20040029355
- Publication date Feb 12, 2004
- Matsushita Electric Industrial Co., Ltd.
- Yoshihiro Hara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method of the same
- Publication number 20040018692
- Publication date Jan 29, 2004
- Matsushita Electric Industrial Co., Ltd.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transistor
- Publication number 20030213977
- Publication date Nov 20, 2003
- Matsushita Electric Industrial Co., Ltd.
- Kenji Toyoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor device
- Publication number 20030186516
- Publication date Oct 2, 2003
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Hidenori Notake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transistor
- Publication number 20020163013
- Publication date Nov 7, 2002
- Kenji Toyoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20020158311
- Publication date Oct 31, 2002
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method of the same
- Publication number 20020135009
- Publication date Sep 26, 2002
- MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Teruhito Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS

Teruhito Ohnishi

Person

Patents Grantslast 30 patents

Inductor and method for fabricating the same

Heterojunction biploar transistor and method for manufacturing same

Bipolar transistor and method for fabricating the same

Semiconductor device

Heterojunction bipolar transistor having reduced driving voltage re...

Method of estimating substrate temperature

Method for fabricating semiconductor device

Bipolar transistor and method for fabricating the same

Bipolar transistor device having phosphorous

Method of producing semiconductor crystal

Bipolar transistor and fabrication method thereof

Method of fabricating a bipolar transistor utilizing a dry etching...

Semiconductor device

Variable capacitance device and process for manufacturing the same

Semiconductor device and method for fabricating the same

Semiconductor device

Semiconductor device

Method for fabricating a semiconductor crystal

Bipolar transistor and method manufacture thereof

Method of manufacturing a semiconductor device comprising a bipolar...

Heterojunction bipolar transistor

Bipolar transistor device having phosphorous

Semiconductor device

Method for fabricating semiconductor device

Semiconductor device and method for fabricating the same

Method for cleaning a silicon substrate

Method of manufacturing semiconductor device

Semiconductor device fabrication method

Semiconductor memory device and process

Semiconductor memory device and process

Patents Applicationslast 30 patents

BIPOLAR TRANSISTOR AND METHOD FOR FABRICATING THE SAME

INDUCTOR AND METHOD FOR FABRICATING THE SAME

Heterojunction bipolar transistor and method for manufacturing same

Bipolar transistor and method for fabricating the same

Method of forming semiconductor crystal

Method of estimating substrate temperature

Method for fabricating a semiconductor crystal

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Hetero bipolar transistor

Bipolar transistor and fabrication method thereof

Heterojunction bipolar transistor

Bipolar transistor and method for fabricating the same

Semiconductor device

Variable capacitance device and process for manufacturing the same

Semiconductor device and fabrication method thereof

Bipolar transistor device having phosphorous

Semiconductor device

Semiconductor device

Semiconductor device and method for fabricating the same

Semiconductor device and manufacturing method of the same

Heterojunction bipolar transistor

Method for fabricating semiconductor device

Heterojunction bipolar transistor

Semiconductor device and method for fabricating the same

Semiconductor device and manufacturing method of the same