Claims
- 1. A semiconductor device comprising: a semiconductor substrate; a gate insulator formed over a predetermined region of the semiconductor substrate; a gate electrode formed on the gate insulator; source and drain regions respectively formed in portions of the predetermined region that are situated on both sides of the gate electrode in plan view; a body region formed by a region of the predetermined region exclusive of the source and drain regions; and a contact electrically interconnecting the gate electrode and the body region, wherein
a portion of the contact which is connected to the gate electrode is formed to intersect the gate electrode in plan view.
- 2. The semiconductor device according to claim 1, wherein the portion of the contact which is connected to the gate electrode is formed to intersect the gate electrode so as to delineate a cross in plan view.
- 3. The semiconductor device according to claim 1, wherein the gate electrode is formed to protrude outwardly of the source and drain regions in plan view, while the contact is formed to extend vertically so as to embrace a protruding portion of the gate electrode therein.
- 4. The semiconductor device according to claim 1, wherein the contact hole is formed to extend through the gate insulator upwardly from the body region and to position a protruding portion of the gate electrode therein, and the contact is formed by an electric conductor filling the contact hole.
- 5. The semiconductor device according to claim 1, wherein when a dimension of the gate electrode along a channel length is Lgx, a dimension of the contact along the channel length is Lcx and a fabrication precision in respect of positional deviation along the channel length between the gate electrode and the contact is ΔLcgx,
Lcx>Lgx+2ΔLcgx is satisfied.
- 6. The semiconductor device according to claim 1, wherein when a dimension of the gate electrode along a channel length is Lgx, a dimension of the contact along the channel length is Lcx, a fabrication precision in respect of positional deviation along the channel length between the gate electrode and the contact is ΔLcgx, a fabrication precision in respect of the dimension of the gate electrode along the channel length is ΔLgx and a fabrication precision in respect of the dimension of the contact along the channel length is ΔLcx,
Lcx>Lgx+ΔLcx+ΔLgx+2ΔLcgx is satisfied.
- 7. The semiconductor device according to claim 1, wherein the contact comprises a silicide, one component of which is one of W, Ti, Co, Ni, Mo, Ta and Pt.
- 8. The semiconductor device according to claim 1, wherein a portion of the body region which forms a channel comprises at least one of Si, Ge and C.
- 9. The semiconductor device according to claim 1, wherein the gate insulator is formed of one of SiO2, SiON, Si3N4, ZrO2, HfO2 and Ta2O5.
- 10. A method of fabricating a semiconductor device, comprising the steps of
forming a gate insulator over a predetermined region of a semiconductor substrate; forming a gate electrode on the gate insulator; respectively forming source and drain regions in portions of the predetermined region that are situated on both sides of the gate electrode in plan view; forming a contact electrically interconnecting the gate electrode and a body region formed by a region of the predetermined region exclusive of the source and drain regions; and, wherein a portion of the contact which is connected to the gate electrode is formed to intersect the gate electrode in plan view.
- 11. The method of fabricating a semiconductor device according to claim 10, wherein the portion of the contact which is connected to the gate electrode is formed to intersect the gate electrode so as to delineate a cross in plan view.
- 12. The method of fabricating a semiconductor device according to claim 10, wherein the gate electrode is formed to protrude outwardly of the source and drain regions in plan view, while the contact is formed to extend vertically so as to embrace a protruding portion of the gate electrode therein.
- 13. The method of fabricating a semiconductor device according to claim 10, wherein the contact hole is formed to extend through the gate insulator upwardly from the body region so as to position a protruding portion of the gate electrode therein, and the contact is formed by an electric conductor filling the contact hole.
- 14. The method of fabricating a semiconductor device according to claim 10, wherein when a dimension of the gate electrode along a channel length is Lgx, a dimension of the contact along the channel length is Lcx and a fabrication precision in respect of positional deviation along the channel length between the gate electrode and the contact is ΔLcgx,
Lcx>Lgx+2ΔLcgx is satisfied.
- 15. The method of fabricating a semiconductor device according to claim 10, wherein assume that a dimension of the gate electrode along a channel length is Lgx, a dimension of the contact along the channel length is Lcx, a fabrication precision in respect of positional deviation along the channel length 15 between the gate electrode and the contact is ΔLcgx, a fabrication precision in respect of the dimension of the gate electrode along the channel length is ΔLgx and a fabrication precision in respect of the dimension of the contact along the channel length is ΔLcx,
Lcx>Lgx+ΔLcx+ΔLgx+2ΔLcgx is satisfied.
- 16. The method of fabricating a semiconductor device according to claim 10, wherein the contact comprises a silicide, one component of which is one of W, Ti, Co, Ni, Mo, Ta and Pt.
- 17. The method of fabricating a semiconductor device according to claim 10, wherein a portion of the body region which forms a channel comprises at least one of Si, Ge and C.
- 18. The method of fabricating a semiconductor device according to claim 10, wherein the gate insulator is formed of one of SiO2, SiON, Si3N4, ZrO2, HfO2 and Ta2O5.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2002-142637 |
May 2002 |
JP |
|
Parent Case Info
[0001] This is a continuation application under 35 U.S.C 111(a) of pending prior International Application No.PCT/JP03/06173, filed on May 19, 2003.
Continuations (1)
|
Number |
Date |
Country |
Parent |
PCT/JP03/06173 |
May 2003 |
US |
Child |
10752409 |
Jan 2004 |
US |