Tetsuya Ishikawa

Person

Chiba, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Plasma reactor using inductive RF coupling, and processes
- Patent number 6,545,420
- Issue date Apr 8, 2003
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Plasma reactor using inductive RF coupling, and processes
- Patent number 6,518,195
- Issue date Feb 11, 2003
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Magnetic confinement in a plasma reactor having an RF bias electrode
- Patent number 6,488,807
- Issue date Dec 3, 2002
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process used in an RF coupled plasma reactor
- Patent number 6,068,784
- Issue date May 30, 2000
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Electrostatic chuck usable in high density plasma
- Patent number 5,583,737
- Issue date Dec 10, 1996
- Applied Materials, Inc.
- Kenneth S. Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon scavenger in an inductively coupled RF plasma reactor
- Patent number 5,556,501
- Issue date Sep 17, 1996
- Applied Materials, Inc.
- Kenneth S. Collins
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Electrostatic chuck usable in high density plasma
- Patent number 5,539,609
- Issue date Jul 23, 1996
- Applied Materials, Inc.
- Kenneth S. Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic chuck for high power plasma processing
- Patent number 5,350,479
- Issue date Sep 27, 1994
- Applied Materials, Inc.
- Kenneth S. Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniformity for magnetically enhanced plasma chambers
- Patent number 5,308,417
- Issue date May 3, 1994
- Applied Materials, Inc.
- David W. Groechel
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PROCESSES USED IN AN INDUCTIVELY COUPLED PLASMA REACTOR
- Publication number 20020004309
- Publication date Jan 10, 2002
- KENNETH S. COLLINS
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Tetsuya Ishikawa

Person

Patents Grantslast 30 patents

Plasma reactor using inductive RF coupling, and processes

Plasma reactor using inductive RF coupling, and processes

Magnetic confinement in a plasma reactor having an RF bias electrode

Process used in an RF coupled plasma reactor

Electrostatic chuck usable in high density plasma

Silicon scavenger in an inductively coupled RF plasma reactor

Electrostatic chuck usable in high density plasma

Electrostatic chuck for high power plasma processing

Uniformity for magnetically enhanced plasma chambers

Patents Applicationslast 30 patents

PROCESSES USED IN AN INDUCTIVELY COUPLED PLASMA REACTOR