Theodorus Eduardus Standaert

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Structure and method to improve FAV RIE process margin and electrom...
- Patent number 12,033,892
- Issue date Jul 9, 2024
- TESSERA LLC
- Benjamin David Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric fill for tight pitch MRAM pillar array
- Patent number 11,955,152
- Issue date Apr 9, 2024
- International Business Machines Corporation
- Ashim Dutta
- G11 - INFORMATION STORAGE
Information Patent Grant
High-density memory devices using oxide gap fill
- Patent number 11,937,514
- Issue date Mar 19, 2024
- International Business Machines Corporation
- Theodorus E. Standaert
Information Patent Grant
Optimizating semiconductor binning by feed-forward process adjustment
- Patent number 11,869,783
- Issue date Jan 9, 2024
- International Business Machines Corporation
- Benjamin D. Briggs
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Selective recessing to form a fully aligned via
- Patent number 11,837,501
- Issue date Dec 5, 2023
- TESSERA LLC
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pillar-based memory hardmask smoothing and stress reduction
- Patent number 11,812,668
- Issue date Nov 7, 2023
- International Business Machines Corporation
- Michael Rizzolo
Information Patent Grant
Structure and method to improve FAV RIE process margin and Electrom...
- Patent number 11,710,658
- Issue date Jul 25, 2023
- TESSERA LLC
- Benjamin David Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual damascene with short liner
- Patent number 11,664,271
- Issue date May 30, 2023
- International Business Machines Corporation
- Koichi Motoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET devices
- Patent number 11,615,988
- Issue date Mar 28, 2023
- Tessera, LLC
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non volatile resistive memory logic device
- Patent number 11,600,325
- Issue date Mar 7, 2023
- International Business Machines Corporation
- Hsueh-Chung Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Dielectric retention and method of forming memory pillar
- Patent number 11,569,442
- Issue date Jan 31, 2023
- International Business Machines Corporation
- Saba Zare
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded memory devices
- Patent number 11,502,242
- Issue date Nov 15, 2022
- International Business Machines Corporation
- Ashim Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedding magneto-resistive random-access memory devices between me...
- Patent number 11,462,583
- Issue date Oct 4, 2022
- International Business Machines Corporation
- Ashim Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode-via structure
- Patent number 11,302,630
- Issue date Apr 12, 2022
- International Business Machines Corporation
- Theodorus E. Standaert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective recessing to form a fully aligned via
- Patent number 11,257,717
- Issue date Feb 22, 2022
- Tessera, Inc.
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal surface preparation for increased alignment contrast
- Patent number 11,244,907
- Issue date Feb 8, 2022
- International Business Machines Corporation
- Tianji Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom conductive structure with a limited top contact area
- Patent number 11,239,278
- Issue date Feb 1, 2022
- International Business Machines Corporation
- Chih-Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded BEOL memory device with top electrode pillar
- Patent number 11,239,421
- Issue date Feb 1, 2022
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pillar-based memory hardmask smoothing and stress reduction
- Patent number 11,223,008
- Issue date Jan 11, 2022
- International Business Machines Corporation
- Michael Rizzolo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom electrode for semiconductor memory device
- Patent number 11,217,742
- Issue date Jan 4, 2022
- International Business Machines Corporation
- Chih-Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having reduced contact resistance
- Patent number 11,189,693
- Issue date Nov 30, 2021
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Alignment through topography on intermediate component for memory d...
- Patent number 11,177,437
- Issue date Nov 16, 2021
- International Business Machines Corporation
- Hao Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bamboo tall via interconnect structures
- Patent number 11,164,779
- Issue date Nov 2, 2021
- International Business Machines Corporation
- Chih-Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom electrode for semiconductor memory device
- Patent number 11,145,813
- Issue date Oct 12, 2021
- International Business Machines Corporation
- Chih-Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with deep trench capacitor and methods of...
- Patent number 11,145,658
- Issue date Oct 12, 2021
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Fabrication of self-aligned gate contacts and source/drain contacts...
- Patent number 11,121,032
- Issue date Sep 14, 2021
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bevel metal removal using ion beam etch
- Patent number 11,081,643
- Issue date Aug 3, 2021
- International Business Machines Corporation
- Ashim Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with deep trench capacitor and methods of...
- Patent number 11,056,493
- Issue date Jul 6, 2021
- International Business Machines Corporation
- Kevin K. Chan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Optimizing semiconductor binning by feed-forward process adjustment
- Patent number 11,049,744
- Issue date Jun 29, 2021
- International Business Machines Corporation
- Benjamin D. Briggs
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Contact via with pillar of alternating layers
- Patent number 11,031,542
- Issue date Jun 8, 2021
- International Business Machines Corporation
- Chih-Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE AND METHOD TO IMPROVE FAV RIE PROCESS MARGIN AND ELECTROM...
- Publication number 20240145299
- Publication date May 2, 2024
- TESSERA LLC
- Benjamin David Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE MRAM WITH FRONTSIDE DEVICES
- Publication number 20240114699
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICES
- Publication number 20240038594
- Publication date Feb 1, 2024
- TESSERA LLC
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE CONTACT WITH INCREASED CONTACT AREA
- Publication number 20230411289
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE CONTACT WITH INCREASED CONTACT AREA
- Publication number 20230411466
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANO-TSV LANDING OVER BURIED POWER RAIL
- Publication number 20230253322
- Publication date Aug 10, 2023
- International Business Machines Corporation
- Kisik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED LOCAL INTERCONNECT SEMICONDUCTOR MEMORY DEVICE
- Publication number 20230189671
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Chih-Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PILLAR MEMORY TOP CONTACT LANDING
- Publication number 20230189656
- Publication date Jun 15, 2023
- International Business Machines Corporation
- SABA ZARE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL INTERCONNECTS HAVING DIFFERENT MATERIAL COMPOSITIONS
- Publication number 20230187349
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Chih-Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MODIFIED TOP ELECTRODE CONTACT FOR MRAM EMBEDDING IN ADVANCED LOGIC...
- Publication number 20230186962
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Ashim Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAYERED BOTTOM ELECTRODE DIELECTRIC FOR EMBEDDED MRAM
- Publication number 20230189534
- Publication date Jun 15, 2023
- International Business Machines Corporation
- ASHIM DUTTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC FILL FOR TIGHT PITCH MRAM PILLAR ARRAY
- Publication number 20230178129
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Ashim Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-DENSITY MEMORY DEVICES USING OXIDE GAP FILL
- Publication number 20220359814
- Publication date Nov 10, 2022
- International Business Machines Corporation
- Theodorus E. Standaert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTERNAL MAGNETIC BOTTOM CONTACT STRUCTURE FOR MRAM
- Publication number 20220180911
- Publication date Jun 9, 2022
- International Business Machines Corporation
- Saba Zare
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE RECESSING TO FORM A FULLY ALIGNED VIA
- Publication number 20220181205
- Publication date Jun 9, 2022
- Tessera, Inc.
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON VOLATILE RESISTIVE MEMORY LOGIC DEVICE
- Publication number 20220172776
- Publication date Jun 2, 2022
- International Business Machines Corporation
- Hsueh-Chung Chen
- G11 - INFORMATION STORAGE
Information Patent Application
PILLAR-BASED MEMORY HARDMASK SMOOTHING AND STRESS REDUCTION
- Publication number 20220109099
- Publication date Apr 7, 2022
- International Business Machines Corporation
- Michael Rizzolo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICES
- Publication number 20220013413
- Publication date Jan 13, 2022
- Tessera, Inc.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC RETENTION AND METHOD OF FORMING MEMORY PILLAR
- Publication number 20210399212
- Publication date Dec 23, 2021
- International Business Machines Corporation
- Saba Zare
- G11 - INFORMATION STORAGE
Information Patent Application
ELECTRODE-VIA STRUCTURE
- Publication number 20210320060
- Publication date Oct 14, 2021
- International Business Machines Corporation
- Theodorus E. Standaert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED MEMORY DEVICES
- Publication number 20210305494
- Publication date Sep 30, 2021
- International Business Machines Corporation
- Ashim Dutta
- G11 - INFORMATION STORAGE
Information Patent Application
OPTIMIZATING SEMICONDUCTOR BINNING BY FEED-FORWARD PROCESS ADJUSTMENT
- Publication number 20210249288
- Publication date Aug 12, 2021
- International Business Machines Corporation
- Benjamin D. Briggs
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
BOTTOM CONDUCTIVE STRUCTURE WITH A LIMITED TOP CONTACT AREA
- Publication number 20210242278
- Publication date Aug 5, 2021
- International Business Machines Corporation
- Chih-Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Embedded BEOL Memory Device with Top Electrode Pillar
- Publication number 20210234095
- Publication date Jul 29, 2021
- International Business Machines Corporation
- Dexin Kong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEVEL METAL REMOVAL USING ION BEAM ETCH
- Publication number 20210226120
- Publication date Jul 22, 2021
- International Business Machines Corporation
- Ashim Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL SURFACE PREPARATION FOR INCREASED ALIGNMENT CONTRAST
- Publication number 20210210434
- Publication date Jul 8, 2021
- International Business Machines Corporation
- Tianji Zhou
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
STRUCTURE AND METHOD TO IMPROVE FAV RIE PROCESS MARGIN AND ELECTROM...
- Publication number 20210210380
- Publication date Jul 8, 2021
- Tessera, Inc.
- Benjamin David Briggs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PILLAR-BASED MEMORY HARDMASK SMOOTHING AND STRESS REDUCTION
- Publication number 20210159394
- Publication date May 27, 2021
- International Business Machines Corporation
- Michael Rizzolo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDING MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY DEVICES BETWEEN ME...
- Publication number 20210134883
- Publication date May 6, 2021
- International Business Machines Corporation
- Ashim DUTTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE RECESSING TO FORM A FULLY ALIGNED VIA
- Publication number 20210082758
- Publication date Mar 18, 2021
- Tessera, Inc.
- Benjamin D. Briggs
- H01 - BASIC ELECTRIC ELEMENTS

Theodorus Eduardus Standaert

Person

Patents Grantslast 30 patents

Structure and method to improve FAV RIE process margin and electrom...

Dielectric fill for tight pitch MRAM pillar array

High-density memory devices using oxide gap fill

Optimizating semiconductor binning by feed-forward process adjustment

Selective recessing to form a fully aligned via

Pillar-based memory hardmask smoothing and stress reduction

Structure and method to improve FAV RIE process margin and Electrom...

Dual damascene with short liner

FinFET devices

Non volatile resistive memory logic device

Dielectric retention and method of forming memory pillar

Embedded memory devices

Embedding magneto-resistive random-access memory devices between me...

Electrode-via structure

Selective recessing to form a fully aligned via

Metal surface preparation for increased alignment contrast

Bottom conductive structure with a limited top contact area

Embedded BEOL memory device with top electrode pillar

Pillar-based memory hardmask smoothing and stress reduction

Bottom electrode for semiconductor memory device

Transistor having reduced contact resistance

Alignment through topography on intermediate component for memory d...

Bamboo tall via interconnect structures

Bottom electrode for semiconductor memory device

Semiconductor structures with deep trench capacitor and methods of...

Fabrication of self-aligned gate contacts and source/drain contacts...

Bevel metal removal using ion beam etch

Semiconductor structures with deep trench capacitor and methods of...

Optimizing semiconductor binning by feed-forward process adjustment

Contact via with pillar of alternating layers

Patents Applicationslast 30 patents

STRUCTURE AND METHOD TO IMPROVE FAV RIE PROCESS MARGIN AND ELECTROM...

BACKSIDE MRAM WITH FRONTSIDE DEVICES

FINFET DEVICES

SELF-ALIGNED BACKSIDE CONTACT WITH INCREASED CONTACT AREA

SELF-ALIGNED BACKSIDE CONTACT WITH INCREASED CONTACT AREA

NANO-TSV LANDING OVER BURIED POWER RAIL

RECESSED LOCAL INTERCONNECT SEMICONDUCTOR MEMORY DEVICE

PILLAR MEMORY TOP CONTACT LANDING

LOCAL INTERCONNECTS HAVING DIFFERENT MATERIAL COMPOSITIONS

MODIFIED TOP ELECTRODE CONTACT FOR MRAM EMBEDDING IN ADVANCED LOGIC...

LAYERED BOTTOM ELECTRODE DIELECTRIC FOR EMBEDDED MRAM

DIELECTRIC FILL FOR TIGHT PITCH MRAM PILLAR ARRAY

HIGH-DENSITY MEMORY DEVICES USING OXIDE GAP FILL

EXTERNAL MAGNETIC BOTTOM CONTACT STRUCTURE FOR MRAM

SELECTIVE RECESSING TO FORM A FULLY ALIGNED VIA

NON VOLATILE RESISTIVE MEMORY LOGIC DEVICE

PILLAR-BASED MEMORY HARDMASK SMOOTHING AND STRESS REDUCTION

FINFET DEVICES

DIELECTRIC RETENTION AND METHOD OF FORMING MEMORY PILLAR

ELECTRODE-VIA STRUCTURE

EMBEDDED MEMORY DEVICES

OPTIMIZATING SEMICONDUCTOR BINNING BY FEED-FORWARD PROCESS ADJUSTMENT

BOTTOM CONDUCTIVE STRUCTURE WITH A LIMITED TOP CONTACT AREA

Embedded BEOL Memory Device with Top Electrode Pillar

BEVEL METAL REMOVAL USING ION BEAM ETCH

METAL SURFACE PREPARATION FOR INCREASED ALIGNMENT CONTRAST

STRUCTURE AND METHOD TO IMPROVE FAV RIE PROCESS MARGIN AND ELECTROM...

PILLAR-BASED MEMORY HARDMASK SMOOTHING AND STRESS REDUCTION

EMBEDDING MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY DEVICES BETWEEN ME...

SELECTIVE RECESSING TO FORM A FULLY ALIGNED VIA