Thomas Evans

Person

Colorado Springs, CO, US

People

Patents Grantslast 30 patents

Information Patent Grant
Capacitively coupled ferroelectric random access memory cell and a...
- Patent number 6,597,028
- Issue date Jul 22, 2003
- Ramtron International Corporation
- Glen Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge pump or other charge storage capacitor including PZT layer f...
- Patent number 6,492,673
- Issue date Dec 10, 2002
- Ramtron International Corporation
- Glen Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device structure useful for preventing hydroge...
- Patent number 6,358,755
- Issue date Mar 19, 2002
- Ramtron International Corporation
- Thomas A. Evans
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Completely encapsulated top electrode of a ferroelectric capacitor...
- Patent number 6,281,023
- Issue date Aug 28, 2001
- Ramtron International Corporation
- Brian Lee Eastep
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Completely encapsulated top electrode of a ferroelectric capacitor...
- Patent number 6,211,542
- Issue date Apr 3, 2001
- Ramtron International Corporation
- Brian Lee Eastep
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric memory device structure useful for preventing hydroge...
- Patent number 6,201,726
- Issue date Mar 13, 2001
- Ramtron International Corporation
- Thomas A. Evans
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing ferroelectric memory device useful for prev...
- Patent number 6,174,735
- Issue date Jan 16, 2001
- Ramtron International Corporation
- Thomas A. Evans
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating partially or completely encapsulated top elec...
- Patent number 6,150,184
- Issue date Nov 21, 2000
- Ramtron International Corporation
- Thomas A. Evans
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially or completely encapsulated top electrode of a ferroelectr...
- Patent number 6,027,947
- Issue date Feb 22, 2000
- Ramtron International Corporation
- Thomas A. Evans
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Completely encapsulated top electrode of a ferroelectric capacitor
- Patent number 5,920,453
- Issue date Jul 6, 1999
- Ramtron International Corporation
- Thomas A. Evans
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially or completely encapsulated top electrode of a ferroelectr...
- Patent number 5,864,932
- Issue date Feb 2, 1999
- Ramtron International Corporation
- Thomas A. Evans
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Charge pump or other charge storage capacitor including PZT layer f...
- Publication number 20040033630
- Publication date Feb 19, 2004
- Glen Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge pump or other charge storage capacitor including PZT layer f...
- Publication number 20030067027
- Publication date Apr 10, 2003
- Glen Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE PUMP OR OTHER CHARGE STORAGE CAPACITOR INCLUDING PZT LAYER F...
- Publication number 20020175361
- Publication date Nov 28, 2002
- Glen Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitively coupled ferroelectric random access memory cell and a...
- Publication number 20020000586
- Publication date Jan 3, 2002
- Glen Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Completely encapsulated top electrode of a ferroelectric capacitor...
- Publication number 20010001488
- Publication date May 24, 2001
- Brian Lee Eastep
- H01 - BASIC ELECTRIC ELEMENTS

Thomas Evans

Person

Patents Grantslast 30 patents

Capacitively coupled ferroelectric random access memory cell and a...

Charge pump or other charge storage capacitor including PZT layer f...

Ferroelectric memory device structure useful for preventing hydroge...

Completely encapsulated top electrode of a ferroelectric capacitor...

Completely encapsulated top electrode of a ferroelectric capacitor...

Ferroelectric memory device structure useful for preventing hydroge...

Method of manufacturing ferroelectric memory device useful for prev...

Method of fabricating partially or completely encapsulated top elec...

Partially or completely encapsulated top electrode of a ferroelectr...

Completely encapsulated top electrode of a ferroelectric capacitor

Partially or completely encapsulated top electrode of a ferroelectr...

Patents Applicationslast 30 patents

Charge pump or other charge storage capacitor including PZT layer f...

Charge pump or other charge storage capacitor including PZT layer f...

CHARGE PUMP OR OTHER CHARGE STORAGE CAPACITOR INCLUDING PZT LAYER F...

Capacitively coupled ferroelectric random access memory cell and a...

Completely encapsulated top electrode of a ferroelectric capacitor...