Thomas Happ

Person

Pleasantville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit including sidewall spacer
- Patent number 8,896,045
- Issue date Nov 25, 2014
- Infineon Technologies AG
- Jan Boris Philipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked SONOS memory
- Patent number 8,779,495
- Issue date Jul 15, 2014
- Qimonda AG
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabrication of crystalline diodes for resistive memories
- Patent number 8,637,844
- Issue date Jan 28, 2014
- International Business Machines Corporation
- Bipin Rajendran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory including vertical bipolar select device and resistive memor...
- Patent number 8,384,062
- Issue date Feb 26, 2013
- Qimonda AG
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing a phase change memory device with pillar b...
- Patent number 8,138,028
- Issue date Mar 20, 2012
- Macronix International Co., Ltd.
- Hsiang Lan Lung
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit with memory having a step-like programming chara...
- Patent number 8,084,799
- Issue date Dec 27, 2011
- Qimonda AG
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabricating an integrated circuit including resistivity...
- Patent number 8,039,299
- Issue date Oct 18, 2011
- Qimonda AG
- Jan Boris Philipp
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit including a memory apparatus and production method
- Patent number 8,026,123
- Issue date Sep 27, 2011
- Qimonda AG
- Thomas Happ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pillar phase change memory cell
- Patent number 8,017,930
- Issue date Sep 13, 2011
- Qimonda AG
- Jan Boris Philipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory having shared storage material
- Patent number 7,977,661
- Issue date Jul 12, 2011
- Qimonda AG
- Jan Boris Philipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low power phase change memory cell with large read signal
- Patent number 7,973,301
- Issue date Jul 5, 2011
- Qimonda AG
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory cell including multiple phase change material p...
- Patent number 7,973,384
- Issue date Jul 5, 2011
- Qimonda AG
- Thomas Happ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current constricting phase change memory element structure
- Patent number 7,932,507
- Issue date Apr 26, 2011
- International Business Machines Corporation
- Chieh-Fang Chen
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Program method with locally optimized write parameters
- Patent number 7,916,524
- Issue date Mar 29, 2011
- Qimonda AG
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory with tapered heater
- Patent number 7,910,911
- Issue date Mar 22, 2011
- International Business Machines Corporation
- Matthew Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory with tapered heater
- Patent number 7,906,368
- Issue date Mar 15, 2011
- International Business Machines Corporation
- Matthew Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabrication of single crystal diodes for resistive memories
- Patent number 7,902,051
- Issue date Mar 8, 2011
- International Business Machines Corporation
- Bipin Rajendran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including a memory fabricated using self-aligned...
- Patent number 7,875,492
- Issue date Jan 25, 2011
- Qimonda AG
- Ulrike Gruening-von Schwerin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including force-filled resistivity changing mate...
- Patent number 7,863,593
- Issue date Jan 4, 2011
- Qimonda AG
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Grant
Energy adjusted write pulses in phase-change memory cells
- Patent number 7,859,894
- Issue date Dec 28, 2010
- Qimonda AG
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiple write configurations for a memory cell
- Patent number 7,852,657
- Issue date Dec 14, 2010
- Qimonda AG
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit including vertical diode
- Patent number 7,838,860
- Issue date Nov 23, 2010
- Qimonda AG
- Thomas Happ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an integrated circuit having a memory includi...
- Patent number 7,824,951
- Issue date Nov 2, 2010
- Qimonda AG
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit including resistivity changing material having a...
- Patent number 7,812,333
- Issue date Oct 12, 2010
- Qimonda North America Corp.
- Jan Boris Philipp
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory including buried word lines
- Patent number 7,800,093
- Issue date Sep 21, 2010
- Qimonda North America Corp.
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device having drift compensated read operation and associate...
- Patent number 7,796,424
- Issue date Sep 14, 2010
- Qimonda North America Corp.
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit having a resistive memory
- Patent number 7,787,279
- Issue date Aug 31, 2010
- Qimonda AG
- Thomas D. Happ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including vertical diode
- Patent number 7,745,812
- Issue date Jun 29, 2010
- Qimonda North America Corp.
- Thomas Happ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Current constricting phase change memory element structure
- Patent number 7,745,807
- Issue date Jun 29, 2010
- International Business Machines Corporation
- Chieh-Fang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level resistive memory cell using different crystallization s...
- Patent number 7,719,886
- Issue date May 18, 2010
- Qimonda North America Corp.
- Jan Boris Philipp
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FABRICATION OF CRYSTALLINE DIODES FOR RESISTIVE MEMORIES
- Publication number 20110198557
- Publication date Aug 18, 2011
- International Business Machines Corporation
- Bipin Rajendran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating an Integrated Circuit Including Resistivity...
- Publication number 20100323493
- Publication date Dec 23, 2010
- QIMONDA NORTH AMERICA CORP.
- Jan Boris Philipp
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Including Vertical Bipolar Select Device and Resistive Memor...
- Publication number 20100321990
- Publication date Dec 23, 2010
- QIMONDA NORTH AMERICA CORP.
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Application
CURRENT CONSTRICTING PHASE CHANGE MEMORY ELEMENT STRUCTURE
- Publication number 20100193763
- Publication date Aug 5, 2010
- International Business Machines Corporation
- Chieh-Fang Chen
- B82 - NANO-TECHNOLOGY
Information Patent Application
Phase Change Memory With Tapered Heater
- Publication number 20090289242
- Publication date Nov 26, 2009
- International Business Machines Corporation
- Matthew Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATION OF SINGLE CRYSTAL DIODES FOR RESISTIVE MEMORIES
- Publication number 20090176354
- Publication date Jul 9, 2009
- International Business Machines Corporation
- Bipin Rajendran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING FORCE-FILLED RESISTIVITY CHANGING MATE...
- Publication number 20090020738
- Publication date Jan 22, 2009
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Application
CURRENT CONSTRICTING PHASE CHANGE MEMORY ELEMENT STRUCTURE
- Publication number 20090014704
- Publication date Jan 15, 2009
- International Business Machines Corporation
- Chieh-Fang Chen
- B82 - NANO-TECHNOLOGY
Information Patent Application
PROGRAM METHOD WITH LOCALLY OPTIMIZED WRITE PARAMETERS
- Publication number 20090003044
- Publication date Jan 1, 2009
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Application
Phase Change Memory with Tapered Heater
- Publication number 20090001341
- Publication date Jan 1, 2009
- Matthew Breitwisch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE WRITE CONFIGURATIONS FOR A MEMORY CELL
- Publication number 20090003034
- Publication date Jan 1, 2009
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT INCLUDING RESISTIVITY CHANGING MATERIAL HAVING A...
- Publication number 20090003032
- Publication date Jan 1, 2009
- Jan Boris Philipp
- G11 - INFORMATION STORAGE
Information Patent Application
CONDITIONING OPERATIONS FOR MEMORY CELLS
- Publication number 20090003035
- Publication date Jan 1, 2009
- Jan Boris Philipp
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT INCLUDING VERTICAL DIODE
- Publication number 20080315171
- Publication date Dec 25, 2008
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT HAVING MULTILAYER ELECTRODE
- Publication number 20080315173
- Publication date Dec 25, 2008
- Jan Boris Philipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING CONTACT CONTACTING BOTTOM AND SIDEWALL...
- Publication number 20080316793
- Publication date Dec 25, 2008
- Jan Boris Philipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE HAVING DRIFT COMPENSATED READ OPERATION AND ASSOCIATE...
- Publication number 20080316802
- Publication date Dec 25, 2008
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT INCLUDING VERTICAL DIODE
- Publication number 20080315359
- Publication date Dec 25, 2008
- Thomas Happ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING VERTICAL DIODE
- Publication number 20080315172
- Publication date Dec 25, 2008
- Thomas Happ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING MULTILAYER ELECTRODE
- Publication number 20080316794
- Publication date Dec 25, 2008
- Jan Boris Philipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING SPACER DEFINED ELECTRODE
- Publication number 20080303013
- Publication date Dec 11, 2008
- Thomas Happ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING LOGIC PORTION AND MEMORY PORTION
- Publication number 20080304311
- Publication date Dec 11, 2008
- Jan Boris Philipp
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY HAVING SHARED STORAGE MATERIAL
- Publication number 20080303015
- Publication date Dec 11, 2008
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY HAVING SHARED STORAGE MATERIAL
- Publication number 20080304310
- Publication date Dec 11, 2008
- Jan Boris Philipp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING CONTACT INCLUDING MATERIAL BETWEEN SIDEWALLS
- Publication number 20080296553
- Publication date Dec 4, 2008
- Jan Boris Philipp
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY INCLUDING WRITE CIRCUIT FOR PROVIDING MULTIPLE RESET PULSES
- Publication number 20080273371
- Publication date Nov 6, 2008
- Jan Boris Philipp
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-LEVEL RESISTIVE MEMORY CELL USING DIFFERENT CRYSTALLIZATION S...
- Publication number 20080273378
- Publication date Nov 6, 2008
- Jan Boris Philipp
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE DIODE MEMORY
- Publication number 20080272354
- Publication date Nov 6, 2008
- Thomas Nirschl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT FOR PROGRAMMING A MEMORY ELEMENT
- Publication number 20080266932
- Publication date Oct 30, 2008
- Thomas Happ
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT INCLUDING SPACER MATERIAL LAYER
- Publication number 20080265239
- Publication date Oct 30, 2008
- Jan Boris Philipp
- H01 - BASIC ELECTRIC ELEMENTS

Thomas Happ

Person

Patents Grantslast 30 patents

Integrated circuit including sidewall spacer

Stacked SONOS memory

Method for fabrication of crystalline diodes for resistive memories

Memory including vertical bipolar select device and resistive memor...

Method for manufacturing a phase change memory device with pillar b...

Integrated circuit with memory having a step-like programming chara...

Method for fabricating an integrated circuit including resistivity...

Integrated circuit including a memory apparatus and production method

Pillar phase change memory cell

Memory having shared storage material

Low power phase change memory cell with large read signal

Phase change memory cell including multiple phase change material p...

Current constricting phase change memory element structure

Program method with locally optimized write parameters

Phase change memory with tapered heater

Phase change memory with tapered heater

Method for fabrication of single crystal diodes for resistive memories

Integrated circuit including a memory fabricated using self-aligned...

Integrated circuit including force-filled resistivity changing mate...

Energy adjusted write pulses in phase-change memory cells

Multiple write configurations for a memory cell

Integrated circuit including vertical diode

Method of fabricating an integrated circuit having a memory includi...

Integrated circuit including resistivity changing material having a...

Resistive memory including buried word lines

Memory device having drift compensated read operation and associate...

Integrated circuit having a resistive memory

Integrated circuit including vertical diode

Current constricting phase change memory element structure

Multi-level resistive memory cell using different crystallization s...

Patents Applicationslast 30 patents

METHOD FOR FABRICATION OF CRYSTALLINE DIODES FOR RESISTIVE MEMORIES

Method for Fabricating an Integrated Circuit Including Resistivity...

Memory Including Vertical Bipolar Select Device and Resistive Memor...

CURRENT CONSTRICTING PHASE CHANGE MEMORY ELEMENT STRUCTURE

Phase Change Memory With Tapered Heater

METHOD FOR FABRICATION OF SINGLE CRYSTAL DIODES FOR RESISTIVE MEMORIES

INTEGRATED CIRCUIT INCLUDING FORCE-FILLED RESISTIVITY CHANGING MATE...

CURRENT CONSTRICTING PHASE CHANGE MEMORY ELEMENT STRUCTURE

PROGRAM METHOD WITH LOCALLY OPTIMIZED WRITE PARAMETERS

Phase Change Memory with Tapered Heater

MULTIPLE WRITE CONFIGURATIONS FOR A MEMORY CELL

INTEGRATED CIRCUIT INCLUDING RESISTIVITY CHANGING MATERIAL HAVING A...

CONDITIONING OPERATIONS FOR MEMORY CELLS

INTEGRATED CIRCUIT INCLUDING VERTICAL DIODE

INTEGRATED CIRCUIT HAVING MULTILAYER ELECTRODE

INTEGRATED CIRCUIT INCLUDING CONTACT CONTACTING BOTTOM AND SIDEWALL...

MEMORY DEVICE HAVING DRIFT COMPENSATED READ OPERATION AND ASSOCIATE...

INTEGRATED CIRCUIT INCLUDING VERTICAL DIODE

INTEGRATED CIRCUIT INCLUDING VERTICAL DIODE

INTEGRATED CIRCUIT HAVING MULTILAYER ELECTRODE

INTEGRATED CIRCUIT INCLUDING SPACER DEFINED ELECTRODE

INTEGRATED CIRCUIT INCLUDING LOGIC PORTION AND MEMORY PORTION

MEMORY HAVING SHARED STORAGE MATERIAL

MEMORY HAVING SHARED STORAGE MATERIAL

INTEGRATED CIRCUIT HAVING CONTACT INCLUDING MATERIAL BETWEEN SIDEWALLS

MEMORY INCLUDING WRITE CIRCUIT FOR PROVIDING MULTIPLE RESET PULSES

MULTI-LEVEL RESISTIVE MEMORY CELL USING DIFFERENT CRYSTALLIZATION S...

PHASE CHANGE DIODE MEMORY

CIRCUIT FOR PROGRAMMING A MEMORY ELEMENT

INTEGRATED CIRCUIT INCLUDING SPACER MATERIAL LAYER