Thomas Herman

Person

Manhattan Beach, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
III-nitride power semiconductor device
- Patent number 10,340,333
- Issue date Jul 2, 2019
- Infineon Tecimologies Americas Corp.
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride power semiconductor device
- Patent number 9,923,052
- Issue date Mar 20, 2018
- Infineon Technologies Americas Corp.
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride power semiconductor device
- Patent number 9,391,185
- Issue date Jul 12, 2016
- Infineon Technologies Americas Corp.
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride wafer fabrication
- Patent number 8,815,715
- Issue date Aug 26, 2014
- International Rectifier Corporation
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride wafer fabrication
- Patent number 8,557,681
- Issue date Oct 15, 2013
- International Rectifier Corporation
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Merged cascode transistor
- Patent number 8,264,003
- Issue date Sep 11, 2012
- International Rectifier Corporation
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum alloys for low resistance, ohmic contacts to III-nitride o...
- Patent number 7,719,030
- Issue date May 18, 2010
- International Rectifier Corporation
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for resurf diffusion for high voltage MOSFET
- Patent number 7,482,205
- Issue date Jan 27, 2009
- International Rectifier Corporation
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride power semiconductor device
- Patent number 7,408,208
- Issue date Aug 5, 2008
- International Rectifier Corporation
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for resurf diffusion for high voltage MOSFET
- Patent number 7,180,152
- Issue date Feb 20, 2007
- International Rectifier Corporation
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletion implant for power MOSFET
- Patent number 7,091,080
- Issue date Aug 15, 2006
- International Rectifier Corporation
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing a low voltage MOSFET power device having...
- Patent number 6,955,970
- Issue date Oct 18, 2005
- International Rectifier Corporation
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with reduced threshold voltage and on resistance and process...
- Patent number 6,781,203
- Issue date Aug 24, 2004
- International Rectifier Corporation
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low voltage MOSFET power device having a minimum figure of merit
- Patent number 6,346,726
- Issue date Feb 12, 2002
- International Rectifier Corp.
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power MOSFET with low on-resistance and high breakdown voltage
- Patent number 5,742,087
- Issue date Apr 21, 1998
- International Rectifier Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power MOSFET with low on-resistance and high breakdown voltage
- Patent number 5,598,018
- Issue date Jan 28, 1997
- International Rectifier Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power MOSFET with low on-resistance and high breakdown voltage
- Patent number 5,338,961
- Issue date Aug 16, 1994
- International Rectifier Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power MOSFET with low on-resistance and high breakdown voltage
- Patent number 5,191,396
- Issue date Mar 2, 1993
- International Rectifier Corp.
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plural polygon source pattern for mosfet
- Patent number 5,130,767
- Issue date Jul 14, 1992
- International Rectifier Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plural polygon source pattern for MOSFET
- Patent number 5,008,725
- Issue date Apr 16, 1991
- International Rectifier Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power MOSFET with low on-resistance and high breakdown voltage
- Patent number 4,959,699
- Issue date Sep 25, 1990
- International Rectifier Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optically triggered lateral thyristor with auxiliary region
- Patent number 4,779,126
- Issue date Oct 18, 1988
- International Rectifier Corporation
- Thomas Herman
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
High power MOSFET with low on-resistance and high breakdown voltage
- Patent number 4,705,759
- Issue date Nov 10, 1987
- International Rectifier Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacture of high power MOSFET with laterally distrib...
- Patent number 4,680,853
- Issue date Jul 21, 1987
- International Rectifier Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power MOSFET with low on-resistance and high breakdown voltage
- Patent number 4,642,666
- Issue date Feb 10, 1987
- International Rectifier Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacture of high power MOSFET with laterally distrib...
- Patent number 4,593,302
- Issue date Jun 3, 1986
- International Rectifier Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
A.C. Solid state relay circuit and structure
- Patent number 4,535,251
- Issue date Aug 13, 1985
- International Rectifier Corporation
- Thomas Herman
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Planar structure for high voltage semiconductor devices with gaps i...
- Patent number 4,412,242
- Issue date Oct 25, 1983
- International Rectifier Corporation
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite metal and polysilicon field plate structure for high volt...
- Patent number 4,399,449
- Issue date Aug 16, 1983
- International Rectifier Corporation
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power MOSFET with low on-resistance and high breakdown voltage
- Patent number 4,376,286
- Issue date Mar 8, 1983
- International Rectifier Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
III-Nitride Power Semiconductor Device
- Publication number 20160380046
- Publication date Dec 29, 2016
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Power Semiconductor Device
- Publication number 20160380092
- Publication date Dec 29, 2016
- Infineon Technologies Americas Corp.
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Wafer Fabrication
- Publication number 20140038391
- Publication date Feb 6, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE POWER SEMICONDUCTOR DEVICE
- Publication number 20090039392
- Publication date Feb 12, 2009
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride wafer fabrication
- Publication number 20080102598
- Publication date May 1, 2008
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride power semiconductor device
- Publication number 20080067548
- Publication date Mar 20, 2008
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALUMINUM ALLOYS FOR LOW RESISTANCE, OHMIC CONTACTS TO III-NITRIDE O...
- Publication number 20070228418
- Publication date Oct 4, 2007
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MERGED GATE CASCODE TRANSISTOR
- Publication number 20070215899
- Publication date Sep 20, 2007
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for resurf diffusion for high voltage MOSFET
- Publication number 20070085160
- Publication date Apr 19, 2007
- International Rectifier Corporation
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for resurf diffusion for high voltage MOSFET
- Publication number 20060006555
- Publication date Jan 12, 2006
- International Rectifier Corp.
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mosfet with reduced threshold voltage and on resistance and process...
- Publication number 20030089945
- Publication date May 15, 2003
- International Rectifier Corp.
- Thomas Herman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Depletion implant for power MOSFET
- Publication number 20020117687
- Publication date Aug 29, 2002
- International Rectifier Corp.
- Kyle Spring
- H01 - BASIC ELECTRIC ELEMENTS

Thomas Herman

Person

Patents Grantslast 30 patents

III-nitride power semiconductor device

III-nitride power semiconductor device

III-nitride power semiconductor device

III-nitride wafer fabrication

III-nitride wafer fabrication

Merged cascode transistor

Aluminum alloys for low resistance, ohmic contacts to III-nitride o...

Process for resurf diffusion for high voltage MOSFET

III-nitride power semiconductor device

Process for resurf diffusion for high voltage MOSFET

Depletion implant for power MOSFET

Process for manufacturing a low voltage MOSFET power device having...

MOSFET with reduced threshold voltage and on resistance and process...

Low voltage MOSFET power device having a minimum figure of merit

High power MOSFET with low on-resistance and high breakdown voltage

High power MOSFET with low on-resistance and high breakdown voltage

High power MOSFET with low on-resistance and high breakdown voltage

High power MOSFET with low on-resistance and high breakdown voltage

Plural polygon source pattern for mosfet

Plural polygon source pattern for MOSFET

High power MOSFET with low on-resistance and high breakdown voltage

Optically triggered lateral thyristor with auxiliary region

High power MOSFET with low on-resistance and high breakdown voltage

Process for manufacture of high power MOSFET with laterally distrib...

High power MOSFET with low on-resistance and high breakdown voltage

Process for manufacture of high power MOSFET with laterally distrib...

A.C. Solid state relay circuit and structure

Planar structure for high voltage semiconductor devices with gaps i...

Composite metal and polysilicon field plate structure for high volt...

High power MOSFET with low on-resistance and high breakdown voltage

Patents Applicationslast 30 patents

III-Nitride Power Semiconductor Device

III-Nitride Power Semiconductor Device

III-Nitride Wafer Fabrication

III-NITRIDE POWER SEMICONDUCTOR DEVICE

III-Nitride wafer fabrication

III-Nitride power semiconductor device

ALUMINUM ALLOYS FOR LOW RESISTANCE, OHMIC CONTACTS TO III-NITRIDE O...

MERGED GATE CASCODE TRANSISTOR

Process for resurf diffusion for high voltage MOSFET

Process for resurf diffusion for high voltage MOSFET

Mosfet with reduced threshold voltage and on resistance and process...

Depletion implant for power MOSFET