Thomas N. Jackson

Person

Ossining, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Highly doped semiconductor material and method of fabrication thereof
- Patent number 5,242,859
- Issue date Sep 7, 1993
- International Business Machines Corporation
- Joseph F. Degelormo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming distributed barrier compound semiconductor contacts
- Patent number 5,098,859
- Issue date Mar 24, 1992
- International Business Machines Corporation
- Thomas N. Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor ballistic electron velocity control structure
- Patent number 5,049,955
- Issue date Sep 17, 1991
- International Business Machines Corporation
- John L. Freeouf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned heterojunction transistor
- Patent number 4,872,040
- Issue date Oct 3, 1989
- International Business Machines Corporation
- Thomas N. Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor heterostructure adapted for low temperature operation
- Patent number 4,860,067
- Issue date Aug 22, 1989
- International Business Machines Corporation
- Thomas N. Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally stable low resistance contact
- Patent number 4,849,802
- Issue date Jul 18, 1989
- IBM Corporation
- Thomas N. Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V semiconductor electrical contact
- Patent number 4,757,369
- Issue date Jul 12, 1988
- International Business Machines Corporation
- Thomas N. Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor injection lasers
- Patent number 4,751,708
- Issue date Jun 14, 1988
- International Business Machines Corporation
- Thomas N. Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Space charge modulation device
- Patent number 4,638,342
- Issue date Jan 20, 1987
- International Business Machines Corporation
- John L. Freeouf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon cap for annealing gallium arsenide
- Patent number 4,615,766
- Issue date Oct 7, 1986
- International Business Machines Corporation
- Thomas N. Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Intermediate passivation and cleaning of compound semiconductor sur...
- Patent number 4,597,825
- Issue date Jul 1, 1986
- International Business Machines Corporation
- John L. Freeouf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical MESFET with mesa step defining gate length
- Patent number 4,587,540
- Issue date May 6, 1986
- International Business Machines Corporation
- Thomas N. Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Intermetallic semiconductor ohmic contact
- Patent number 4,583,110
- Issue date Apr 15, 1986
- International Business Machines Corporation
- Thomas N. Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon source component for use in molecular beam epitaxial growth...
- Patent number 4,550,047
- Issue date Oct 29, 1985
- International Business Machines Corporation
- Thomas N. Jackson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Submicron conductor manufacturing
- Patent number 4,542,577
- Issue date Sep 24, 1985
- International Business Machines Corporation
- Thomas N. Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ballistic conduction semiconductor device
- Patent number 4,532,533
- Issue date Jul 30, 1985
- International Business Machines Corporation
- Thomas N. Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Submicron conductor manufacturing
- Patent number 4,532,532
- Issue date Jul 30, 1985
- International Business Machines Corporation
- Thomas N. Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor conversion of optical-to-electrical energy
- Patent number 4,525,731
- Issue date Jun 25, 1985
- International Business Machines Corporation
- Terry I. Chappell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heater assembly for molecular beam epitaxy furnace
- Patent number 4,518,846
- Issue date May 21, 1985
- International Business Machines Corporation
- John L. Freeouf
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of activating implanted impurities in broad area compound se...
- Patent number 4,472,206
- Issue date Sep 18, 1984
- International Business Machines Corporation
- Rodney T. Hodgson
- H01 - BASIC ELECTRIC ELEMENTS

Thomas N. Jackson

Person

Patents Grantslast 30 patents

Highly doped semiconductor material and method of fabrication thereof

Method for forming distributed barrier compound semiconductor contacts

Semiconductor ballistic electron velocity control structure

Self-aligned heterojunction transistor

Semiconductor heterostructure adapted for low temperature operation

Thermally stable low resistance contact

Group III-V semiconductor electrical contact

Semiconductor injection lasers

Space charge modulation device

Silicon cap for annealing gallium arsenide

Intermediate passivation and cleaning of compound semiconductor sur...

Vertical MESFET with mesa step defining gate length

Intermetallic semiconductor ohmic contact

Silicon source component for use in molecular beam epitaxial growth...

Submicron conductor manufacturing

Ballistic conduction semiconductor device

Submicron conductor manufacturing

Semiconductor conversion of optical-to-electrical energy

Heater assembly for molecular beam epitaxy furnace

Method of activating implanted impurities in broad area compound se...