Thomas S. Kanarsky

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
finFETs and methods of making same
- Patent number 8,410,544
- Issue date Apr 2, 2013
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
finFETS and methods of making same
- Patent number 8,043,920
- Issue date Oct 25, 2011
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having V-shaped embedded stressor
- Patent number 7,989,298
- Issue date Aug 2, 2011
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual stress memorization technique for CMOS application
- Patent number 7,968,915
- Issue date Jun 28, 2011
- International Business Machines Corporation
- Thomas S. Kanarsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for non-selective shallow trench isolation reactive ion etch...
- Patent number 7,871,893
- Issue date Jan 18, 2011
- International Business Machines Corporation
- Gregory Costrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual stress memorization technique for CMOS application
- Patent number 7,834,399
- Issue date Nov 16, 2010
- International Business Machines Corporation
- Thomas S. Kanarsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sectional field effect devices and method of fabrication
- Patent number 7,659,153
- Issue date Feb 9, 2010
- International Business Machines Corporation
- Ying Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating sectional field effect devices
- Patent number 7,413,941
- Issue date Aug 19, 2008
- International Business Machines Corporation
- Ying Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sectional field effect devices
- Patent number 7,388,258
- Issue date Jun 17, 2008
- International Business Machines Corporation
- Ying Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to generate local mechanical gate stress for M...
- Patent number 7,314,789
- Issue date Jan 1, 2008
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid planar and FinFET CMOS devices
- Patent number 7,250,658
- Issue date Jul 31, 2007
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra thin channel MOSFET
- Patent number 7,211,490
- Issue date May 1, 2007
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to generate local mechanical gate stress for M...
- Patent number 7,173,312
- Issue date Feb 6, 2007
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a disposable reversed spacer process for hi...
- Patent number 7,041,538
- Issue date May 9, 2006
- International Business Machines Corporation
- Meikei Ieong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-thin Si channel CMOS with improved series resistance
- Patent number 7,018,891
- Issue date Mar 28, 2006
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra thin channel MOSFET
- Patent number 6,914,303
- Issue date Jul 5, 2005
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid planar and finFET CMOS devices
- Patent number 6,911,383
- Issue date Jun 28, 2005
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to fabricate ultra-thin Si channel devices
- Patent number 6,905,941
- Issue date Jun 14, 2005
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and process to make multiple-threshold metal gates CMOS tech...
- Patent number 6,846,734
- Issue date Jan 25, 2005
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure of a disposable reversed spacer process for hi...
- Patent number 6,677,646
- Issue date Jan 13, 2004
- International Business Machines Corporation
- Meikei Ieong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical DRAM having metallic node conductor
- Patent number 6,583,462
- Issue date Jun 24, 2003
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical DRAM cell with robust gate-to-storage node isolation
- Patent number 6,376,873
- Issue date Apr 23, 2002
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench storage DRAM cell with vertical three-sided transfer device
- Patent number 6,333,533
- Issue date Dec 25, 2001
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of out-diffused bitline by laser anneal
- Patent number 6,258,661
- Issue date Jul 10, 2001
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for monitoring components in the TiW etching bath used in t...
- Patent number 6,238,589
- Issue date May 29, 2001
- International Business Machines Corporation
- Emanuel Israel Cooper
- G01 - MEASURING TESTING
Information Patent Grant
Method of forming a buried bitline in a vertical DRAM device
- Patent number 6,218,236
- Issue date Apr 17, 2001
- International Business Machines Corporation
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of out-diffused bitline by laser anneal
- Patent number 6,207,493
- Issue date Mar 27, 2001
- International Business Machines Corporation
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallic interconnect pad, and integrated circuit structure using s...
- Patent number 5,796,168
- Issue date Aug 18, 1998
- International Business Machines Corporation
- Madhav Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching of Ti-W for C4 rework
- Patent number 5,759,437
- Issue date Jun 2, 1998
- International Business Machines Corporation
- Madhav Datta
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method to improve uniformity and reduce excess undercuts during che...
- Patent number 5,620,611
- Issue date Apr 15, 1997
- International Business Machines Corporation
- Madhav Datta
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
finFETS AND METHODS OF MAKING SAME
- Publication number 20110316081
- Publication date Dec 29, 2011
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING V-SHAPED EMBEDDED STRESSOR
- Publication number 20110183486
- Publication date Jul 28, 2011
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
finFETS AND METHODS OF MAKING SAME
- Publication number 20110062518
- Publication date Mar 17, 2011
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL STRESS MEMORIZATION TECHNIQUE FOR CMOS APPLICATION
- Publication number 20090298297
- Publication date Dec 3, 2009
- International Business Machines Corporation
- Thomas S. Kanarsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE WITH EMBEDDED STRESSOR
- Publication number 20090242989
- Publication date Oct 1, 2009
- KEVIN K. CHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR NON-SELECTIVE SHALLOW TRENCH ISOLATION REACTIVE ION ETCH...
- Publication number 20090189242
- Publication date Jul 30, 2009
- International Business Machines Corporation
- Gregory Costrini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL STRESS MEMORIZATION TECHNIQUE FOR CMOS APPLICATION
- Publication number 20080303101
- Publication date Dec 11, 2008
- International Business Machines Corporation
- Thomas S. Kanarsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sectional Field Effect Devices and Method of Fabrication
- Publication number 20080254577
- Publication date Oct 16, 2008
- International Business Machines Corporation
- Ying Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTRINSICALLY STRESSED LINER AND FABRICATION METHODS THEREOF
- Publication number 20080083955
- Publication date Apr 10, 2008
- Thomas S. Kanarsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO GENERATE LOCAL MECHANICAL GATE STRESS FOR M...
- Publication number 20070111421
- Publication date May 17, 2007
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sectional field effect devices and method of fabrication
- Publication number 20060240607
- Publication date Oct 26, 2006
- International Business Machines Corporation
- Ying Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO GENERATE LOCAL MECHANICAL GATE STRESS FOR M...
- Publication number 20060124974
- Publication date Jun 15, 2006
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hybrid planar and FinFET CMOS devices
- Publication number 20050263831
- Publication date Dec 1, 2005
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra thin channel MOSFET
- Publication number 20050164433
- Publication date Jul 28, 2005
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra-thin Si channel CMOS with improved series resistance
- Publication number 20050127408
- Publication date Jun 16, 2005
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sectional field effect devices and method of fabrication
- Publication number 20050127362
- Publication date Jun 16, 2005
- Ying Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and process to make multiple-threshold metal gates CMOS tech...
- Publication number 20050106788
- Publication date May 19, 2005
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultra thin channel MOSFET
- Publication number 20050048752
- Publication date Mar 3, 2005
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method to fabricate ultra-thin Si channel devices
- Publication number 20050003589
- Publication date Jan 6, 2005
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID PLANAR AND FinFET CMOS DEVICES
- Publication number 20040266076
- Publication date Dec 30, 2004
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO FABRICATE ULTRA-THIN Si CHANNEL DEVICES
- Publication number 20040241981
- Publication date Dec 2, 2004
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure of a disposable reversed spacer process for hi...
- Publication number 20040104433
- Publication date Jun 3, 2004
- International Business Machines Corporation
- Meikei Ieong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and process to make multiple-threshold metal gates CMOS tech...
- Publication number 20040094804
- Publication date May 20, 2004
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure of a disposable reversed spacer process for hi...
- Publication number 20030189228
- Publication date Oct 9, 2003
- International Business Machines Corporation
- Meikei Ieong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a buried bitline in a vertical DRAM device
- Publication number 20010017384
- Publication date Aug 30, 2001
- International Business Machines Corporation
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process of manufacturing a dynamic random access memory device
- Publication number 20010018247
- Publication date Aug 30, 2001
- Toshiharu Furukawa
- H01 - BASIC ELECTRIC ELEMENTS

Thomas S. Kanarsky

Person

Patents Grantslast 30 patents

finFETs and methods of making same

finFETS and methods of making same

Transistor having V-shaped embedded stressor

Dual stress memorization technique for CMOS application

Method for non-selective shallow trench isolation reactive ion etch...

Dual stress memorization technique for CMOS application

Sectional field effect devices and method of fabrication

Method of fabricating sectional field effect devices

Sectional field effect devices

Structure and method to generate local mechanical gate stress for M...

Hybrid planar and FinFET CMOS devices

Ultra thin channel MOSFET

Structure and method to generate local mechanical gate stress for M...

Method of manufacturing a disposable reversed spacer process for hi...

Ultra-thin Si channel CMOS with improved series resistance

Ultra thin channel MOSFET

Hybrid planar and finFET CMOS devices

Structure and method to fabricate ultra-thin Si channel devices

Method and process to make multiple-threshold metal gates CMOS tech...

Method and structure of a disposable reversed spacer process for hi...

Vertical DRAM having metallic node conductor

Vertical DRAM cell with robust gate-to-storage node isolation

Trench storage DRAM cell with vertical three-sided transfer device

Formation of out-diffused bitline by laser anneal

Methods for monitoring components in the TiW etching bath used in t...

Method of forming a buried bitline in a vertical DRAM device

Formation of out-diffused bitline by laser anneal

Metallic interconnect pad, and integrated circuit structure using s...

Etching of Ti-W for C4 rework

Method to improve uniformity and reduce excess undercuts during che...

Patents Applicationslast 30 patents

finFETS AND METHODS OF MAKING SAME

TRANSISTOR HAVING V-SHAPED EMBEDDED STRESSOR

finFETS AND METHODS OF MAKING SAME

DUAL STRESS MEMORIZATION TECHNIQUE FOR CMOS APPLICATION

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE WITH EMBEDDED STRESSOR

METHOD FOR NON-SELECTIVE SHALLOW TRENCH ISOLATION REACTIVE ION ETCH...

DUAL STRESS MEMORIZATION TECHNIQUE FOR CMOS APPLICATION

Sectional Field Effect Devices and Method of Fabrication

INTRINSICALLY STRESSED LINER AND FABRICATION METHODS THEREOF

STRUCTURE AND METHOD TO GENERATE LOCAL MECHANICAL GATE STRESS FOR M...

Sectional field effect devices and method of fabrication

STRUCTURE AND METHOD TO GENERATE LOCAL MECHANICAL GATE STRESS FOR M...

Hybrid planar and FinFET CMOS devices

Ultra thin channel MOSFET

Ultra-thin Si channel CMOS with improved series resistance

Sectional field effect devices and method of fabrication

Method and process to make multiple-threshold metal gates CMOS tech...

Ultra thin channel MOSFET

Structure and method to fabricate ultra-thin Si channel devices

HYBRID PLANAR AND FinFET CMOS DEVICES

STRUCTURE AND METHOD TO FABRICATE ULTRA-THIN Si CHANNEL DEVICES

Method and structure of a disposable reversed spacer process for hi...

Method and process to make multiple-threshold metal gates CMOS tech...

Method and structure of a disposable reversed spacer process for hi...

Method of forming a buried bitline in a vertical DRAM device

Process of manufacturing a dynamic random access memory device