Thomas Werner

Person

Reichenberg, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Methods of forming 3-D integrated semiconductor devices having inte...
- Patent number 10,014,279
- Issue date Jul 3, 2018
- GLOBALFOUNDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer with improved plating current distribution
- Patent number 9,627,317
- Issue date Apr 18, 2017
- GLOBALFOUNDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including a die seal leakage detection mate...
- Patent number 9,455,232
- Issue date Sep 27, 2016
- GLOBALFOUNDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical breakdown protection layer
- Patent number 9,362,239
- Issue date Jun 7, 2016
- GLOBALFOUNDRIES Inc.
- Oliver Aubel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer with improved plating current distribution
- Patent number 9,349,641
- Issue date May 24, 2016
- GLOBALFOUNDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3-D integrated semiconductor device comprising intermediate heat sp...
- Patent number 9,318,468
- Issue date Apr 19, 2016
- GLOBALFOUNDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization system of a semiconductor device including metal pill...
- Patent number 9,245,860
- Issue date Jan 26, 2016
- Advanced Micro Devices, Inc.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization system of a semiconductor device comprising extra-tap...
- Patent number 8,835,303
- Issue date Sep 16, 2014
- Advanced Micro Devices, Inc.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Restricted stress regions formed in the contact level of a semicond...
- Patent number 8,828,887
- Issue date Sep 9, 2014
- GLOBALFOUNDRIE Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for increasing penetration depth of drain and source implant...
- Patent number 8,735,237
- Issue date May 27, 2014
- Advanced Micro Devices, Inc.
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising self-aligned contact bars and metal...
- Patent number 8,716,126
- Issue date May 6, 2014
- GLOBALFOUNDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned multiple gate transistor formed on a bulk substrate
- Patent number 8,679,924
- Issue date Mar 25, 2014
- GLOBALFOUNDRIES Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device comprising replacement gate...
- Patent number 8,609,524
- Issue date Dec 17, 2013
- GLOBALFOUNDRIES Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress reduction in chip packaging by using a low-temperature chip-...
- Patent number 8,482,123
- Issue date Jul 9, 2013
- GLOBALFOUNDRIES Inc.
- Michael Grillberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization system of a semiconductor device comprising rounded i...
- Patent number 8,420,533
- Issue date Apr 16, 2013
- GLOBALFOUNDRIES Inc.
- Robert Seidel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising self-aligned contact bars and metal...
- Patent number 8,399,352
- Issue date Mar 19, 2013
- GLOBALFOUNDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a metallization system of a semiconductor device...
- Patent number 8,377,820
- Issue date Feb 19, 2013
- GLOBALFOUNDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid contact structure with low aspect ratio contacts in a semico...
- Patent number 8,368,221
- Issue date Feb 5, 2013
- Advanced Micro Devices, Inc.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing patterning variability of trenches in metallization layer...
- Patent number 8,357,610
- Issue date Jan 22, 2013
- GLOBALFOUNDRIES Inc.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microstructure device including a metallization structure with self...
- Patent number 8,344,474
- Issue date Jan 1, 2013
- Advanced Micro Devices, Inc.
- Robert Seidel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for increasing penetration depth of drain and source implant...
- Patent number 8,241,973
- Issue date Aug 14, 2012
- Advanced Micro Devices, Inc.
- Uwe Griebenow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing contamination by providing a removable polymer p...
- Patent number 8,216,927
- Issue date Jul 10, 2012
- GLOBALFOUNDRIES Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superior fill conditions in a replacement gate approach by using a...
- Patent number 8,198,147
- Issue date Jun 12, 2012
- GLOBALFOUNDRIES, INC.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and a semiconductor device comprising a protection layer for...
- Patent number 8,105,962
- Issue date Jan 31, 2012
- GLOBALFOUNDRIES Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3-D integrated semiconductor device comprising intermediate heat sp...
- Patent number 8,080,866
- Issue date Dec 20, 2011
- GLOBALFOUNDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microstructure device including a metallization structure with self...
- Patent number 8,048,796
- Issue date Nov 1, 2011
- GLOBALFOUNDRIES Inc.
- Robert Seidel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a capacitor in the metallization sy...
- Patent number 8,048,736
- Issue date Nov 1, 2011
- Advanced Micro Devices, Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for patterning a metallization layer by reducing resist stri...
- Patent number 8,048,811
- Issue date Nov 1, 2011
- Advanced Micro Devices, Inc.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and test structure for estimating focus settings in a lithog...
- Patent number 8,040,497
- Issue date Oct 18, 2011
- GLOBALFOUNDRIES Inc.
- Thomas Werner
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Enhancing structural integrity of low-k dielectrics in metallizatio...
- Patent number 8,030,209
- Issue date Oct 4, 2011
- GLOBALFOUNDDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
COIL INDUCTOR
- Publication number 20160260794
- Publication date Sep 8, 2016
- GLOBALFOUNDRIES INC.
- Oliver Aubel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER WITH IMPROVED PLATING CURRENT DISTRIBUTION
- Publication number 20160240473
- Publication date Aug 18, 2016
- GLOBALFOUNDRIES INC.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING 3-D INTEGRATED SEMICONDUCTOR DEVICES HAVING INTE...
- Publication number 20160190104
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES INC.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL BREAKDOWN PROTECTION LAYER
- Publication number 20160111382
- Publication date Apr 21, 2016
- GLOBALFOUNDRIES INC.
- Oliver Aubel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING A DIE SEAL LEAKAGE DETECTION MATE...
- Publication number 20160111381
- Publication date Apr 21, 2016
- GLOBALFOUNDRIES INC.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER WITH IMPROVED PLATING CURRENT DISTRIBUTION
- Publication number 20160079116
- Publication date Mar 17, 2016
- GLOBALFOUNDRIES INC.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING SELF-ALIGNED CONTACT BARS AND METAL...
- Publication number 20130154018
- Publication date Jun 20, 2013
- GLOBALFOUNDRIES INC.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING PATTERNING VARIABILITY OF TRENCHES IN METALLIZATION LAYER...
- Publication number 20130130498
- Publication date May 23, 2013
- GLOBALFOUNDRIES INC.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESTRICTED STRESS REGIONS FORMED IN THE CONTACT LEVEL OF A SEMICOND...
- Publication number 20130084703
- Publication date Apr 4, 2013
- GLOBALFOUNDRIES INC.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR INCREASING PENETRATION DEPTH OF DRAIN AND SOURCE IMPLANT...
- Publication number 20120256240
- Publication date Oct 11, 2012
- Advanced Micro Devices, Inc.
- UWE GRIEBENOW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERIOR FILL CONDITIONS IN A REPLACEMENT GATE APPROACH BY USING A...
- Publication number 20120223388
- Publication date Sep 6, 2012
- GLOBALFOUNDRIES, INC.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Performance Enhancement in Metallization Systems of Microstructure...
- Publication number 20120153479
- Publication date Jun 21, 2012
- GLOBALFOUNDRIES INC.
- Oliver Aubel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising Self-Aligned Contact Bars and Metal...
- Publication number 20120153366
- Publication date Jun 21, 2012
- GLOBALFOUNDRIES INC.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Semiconductor Device Comprising a Protection Layer for R...
- Publication number 20120091535
- Publication date Apr 19, 2012
- GLOBALFOUNDRIES INC.
- Kai FROHBERG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3-D Integrated Semiconductor Device Comprising Intermediate Heat Sp...
- Publication number 20120061818
- Publication date Mar 15, 2012
- GLOBALFOUNDRIES INC.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stress Reduction in Chip Packaging by Using a Low-Temperature Chip-...
- Publication number 20120049350
- Publication date Mar 1, 2012
- GLOBALFOUNDRIES INC.
- Michael Grillberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT STRUCTURE LATERALLY ENCLOSED BY AN ISOLATION S...
- Publication number 20120021581
- Publication date Jan 26, 2012
- GLOBAL FOUNDRIES Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Multiple Gate Transistor Formed on a Bulk Substrate
- Publication number 20110291196
- Publication date Dec 1, 2011
- GLOBALFOUNDRIES INC.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Comprising a Capacitor in the Metallization Sy...
- Publication number 20110241167
- Publication date Oct 6, 2011
- GLOBALFOUNDRIES INC.
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METALLIZATION SYSTEM OF A SEMICONDUCTOR DEVICE COMPRISING ROUNDED I...
- Publication number 20110212616
- Publication date Sep 1, 2011
- Robert Seidel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Reducing Contamination by Providing a Removable Polymer P...
- Publication number 20110201135
- Publication date Aug 18, 2011
- GLOBALFOUNDRIES INC.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATING VIAS OF DIFFERENT SIZE OF A SEMICONDUCTOR DEVICE BY SPL...
- Publication number 20110104867
- Publication date May 5, 2011
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING REPLACEMENT GATE ELECTRODE STRUCTUR...
- Publication number 20110101426
- Publication date May 5, 2011
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CORNER ROUNDING IN A REPLACEMENT GATE APPROACH BASED ON A SACRIFICI...
- Publication number 20110104880
- Publication date May 5, 2011
- Jens Heinrich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPERIOR FILL CONDITIONS IN A REPLACEMENT GATE APPROACH BY USING A...
- Publication number 20110049640
- Publication date Mar 3, 2011
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ASPECT RATIO CONTACT ELEMENT WITH SUPERIOR SHAPE IN A SEMICOND...
- Publication number 20100301486
- Publication date Dec 2, 2010
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROSTRUCTURE DEVICE INCLUDING A METALLIZATION STRUCTURE WITH SELF...
- Publication number 20100301489
- Publication date Dec 2, 2010
- Robert Seidel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROSTRUCTURE DEVICE INCLUDING A METALLIZATION STRUCTURE WITH SELF...
- Publication number 20100219534
- Publication date Sep 2, 2010
- Robert Seidel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METALLIZATION SYSTEM OF A SEMICONDUCTOR DEVICE INCLUDING METAL PILL...
- Publication number 20100219527
- Publication date Sep 2, 2010
- Frank Feustel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A METALLIZATION SYSTEM OF A SEMICONDUCTOR DEVICE...
- Publication number 20100197133
- Publication date Aug 5, 2010
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS

Thomas Werner

Person

Patents Grantslast 30 patents

Methods of forming 3-D integrated semiconductor devices having inte...

Wafer with improved plating current distribution

Semiconductor structure including a die seal leakage detection mate...

Vertical breakdown protection layer

Wafer with improved plating current distribution

3-D integrated semiconductor device comprising intermediate heat sp...

Metallization system of a semiconductor device including metal pill...

Metallization system of a semiconductor device comprising extra-tap...

Restricted stress regions formed in the contact level of a semicond...

Method for increasing penetration depth of drain and source implant...

Semiconductor device comprising self-aligned contact bars and metal...

Self-aligned multiple gate transistor formed on a bulk substrate

Method for making semiconductor device comprising replacement gate...

Stress reduction in chip packaging by using a low-temperature chip-...

Metallization system of a semiconductor device comprising rounded i...

Semiconductor device comprising self-aligned contact bars and metal...

Method of forming a metallization system of a semiconductor device...

Hybrid contact structure with low aspect ratio contacts in a semico...

Reducing patterning variability of trenches in metallization layer...

Microstructure device including a metallization structure with self...

Method for increasing penetration depth of drain and source implant...

Method of reducing contamination by providing a removable polymer p...

Superior fill conditions in a replacement gate approach by using a...

Method and a semiconductor device comprising a protection layer for...

3-D integrated semiconductor device comprising intermediate heat sp...

Microstructure device including a metallization structure with self...

Semiconductor device comprising a capacitor in the metallization sy...

Method for patterning a metallization layer by reducing resist stri...

Method and test structure for estimating focus settings in a lithog...

Enhancing structural integrity of low-k dielectrics in metallizatio...

Patents Applicationslast 30 patents

COIL INDUCTOR

WAFER WITH IMPROVED PLATING CURRENT DISTRIBUTION

METHODS OF FORMING 3-D INTEGRATED SEMICONDUCTOR DEVICES HAVING INTE...

VERTICAL BREAKDOWN PROTECTION LAYER

SEMICONDUCTOR STRUCTURE INCLUDING A DIE SEAL LEAKAGE DETECTION MATE...

WAFER WITH IMPROVED PLATING CURRENT DISTRIBUTION

SEMICONDUCTOR DEVICE COMPRISING SELF-ALIGNED CONTACT BARS AND METAL...

REDUCING PATTERNING VARIABILITY OF TRENCHES IN METALLIZATION LAYER...

RESTRICTED STRESS REGIONS FORMED IN THE CONTACT LEVEL OF A SEMICOND...

METHOD FOR INCREASING PENETRATION DEPTH OF DRAIN AND SOURCE IMPLANT...

SUPERIOR FILL CONDITIONS IN A REPLACEMENT GATE APPROACH BY USING A...

Performance Enhancement in Metallization Systems of Microstructure...

Semiconductor Device Comprising Self-Aligned Contact Bars and Metal...

Method and Semiconductor Device Comprising a Protection Layer for R...

3-D Integrated Semiconductor Device Comprising Intermediate Heat Sp...

Stress Reduction in Chip Packaging by Using a Low-Temperature Chip-...

SELF-ALIGNED CONTACT STRUCTURE LATERALLY ENCLOSED BY AN ISOLATION S...

Self-Aligned Multiple Gate Transistor Formed on a Bulk Substrate

Semiconductor Device Comprising a Capacitor in the Metallization Sy...

METALLIZATION SYSTEM OF A SEMICONDUCTOR DEVICE COMPRISING ROUNDED I...

Method of Reducing Contamination by Providing a Removable Polymer P...

FABRICATING VIAS OF DIFFERENT SIZE OF A SEMICONDUCTOR DEVICE BY SPL...

SEMICONDUCTOR DEVICE COMPRISING REPLACEMENT GATE ELECTRODE STRUCTUR...

CORNER ROUNDING IN A REPLACEMENT GATE APPROACH BASED ON A SACRIFICI...

SUPERIOR FILL CONDITIONS IN A REPLACEMENT GATE APPROACH BY USING A...

HIGH-ASPECT RATIO CONTACT ELEMENT WITH SUPERIOR SHAPE IN A SEMICOND...

MICROSTRUCTURE DEVICE INCLUDING A METALLIZATION STRUCTURE WITH SELF...

MICROSTRUCTURE DEVICE INCLUDING A METALLIZATION STRUCTURE WITH SELF...

METALLIZATION SYSTEM OF A SEMICONDUCTOR DEVICE INCLUDING METAL PILL...

METHOD OF FORMING A METALLIZATION SYSTEM OF A SEMICONDUCTOR DEVICE...