Thorsten Kammler

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
High voltage extended drain MOSFET (EDMOS) devices in a high-k meta...
- Patent number 11,705,455
- Issue date Jul 18, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Thorsten E. Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-integrated high voltage (HV) and medium voltage (MV) field effec...
- Patent number 11,289,598
- Issue date Mar 29, 2022
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Nan Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming semiconductor layers of different thickness in...
- Patent number 10,141,229
- Issue date Nov 27, 2018
- GLOBALFOUNDRIES Inc.
- Jürgen Faul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device structure using differing...
- Patent number 9,876,111
- Issue date Jan 23, 2018
- GLOBALFOUNDRIES Inc.
- Steffen Sichler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a gate mask for fabricating a structure of gate l...
- Patent number 9,514,942
- Issue date Dec 6, 2016
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including at least one electrically conduct...
- Patent number 9,466,685
- Issue date Oct 11, 2016
- GLOBALFOUNDRIES Inc.
- Hans-Peter Moll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI transistor having drain and source regions of reduced length an...
- Patent number 9,450,073
- Issue date Sep 20, 2016
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow pn junction formed by in situ doping during selective growt...
- Patent number 8,906,811
- Issue date Dec 9, 2014
- Advanced Micro Devices, Inc.
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned silicidation for replacement gate process
- Patent number 8,779,529
- Issue date Jul 15, 2014
- GLOBALFOUNDRIES, INC.
- Indradeep Sen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced threshold variability having a th...
- Patent number 8,674,416
- Issue date Mar 18, 2014
- GLOBALFOUNDRIES Inc.
- Carsten Reichel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming silicon/germanium containing drain/source region...
- Patent number 8,652,913
- Issue date Feb 18, 2014
- GLOBALFOUNDRIES Inc.
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating a semiconductor IC having a hardened shallow...
- Patent number 8,569,143
- Issue date Oct 29, 2013
- GLOBALFOUNDRIES, INC.
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adjusting of strain caused in a transistor channel by semiconductor...
- Patent number 8,518,784
- Issue date Aug 27, 2013
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Leakage control in field effect transistors based on an implantatio...
- Patent number 8,481,404
- Issue date Jul 9, 2013
- GLOBALFOUNDRIES Inc.
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a field effect transistor
- Patent number 8,440,516
- Issue date May 14, 2013
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned silicidation for replacement gate process
- Patent number 8,361,870
- Issue date Jan 29, 2013
- GLOBALFOUNDRIES Inc.
- Indradeep Sen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing deposition uniformity of a channel semiconductor alloy by...
- Patent number 8,324,119
- Issue date Dec 4, 2012
- GLOBALFOUNDRIES Inc.
- Carsten Reichel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of a channel semiconductor alloy by depositing a hard mas...
- Patent number 8,293,596
- Issue date Oct 23, 2012
- GLOBALFOUNDRIES Inc.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for providing stress sources in transistors in close prox...
- Patent number 8,274,120
- Issue date Sep 25, 2012
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using high-k dielectrics as highly selective etch stop materials in...
- Patent number 8,198,166
- Issue date Jun 12, 2012
- GLOBALFOUNDRIES, INC.
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing the creation of charge traps at gate dielectrics in MOS tr...
- Patent number 8,119,461
- Issue date Feb 21, 2012
- GLOBALFOUNDRIES Inc.
- Martin Trentzsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming double gate and tri-gate transistors on a bulk s...
- Patent number 8,114,746
- Issue date Feb 14, 2012
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow PN junction formed by in situ doping during selective growt...
- Patent number 8,053,273
- Issue date Nov 8, 2011
- Advanced Micro Devices Inc.
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having a channel with tensile strain and oriented along...
- Patent number 8,039,878
- Issue date Oct 18, 2011
- Advanced Micro Devices, Inc.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-silicide system in integrated circuit technology
- Patent number 7,843,015
- Issue date Nov 30, 2010
- GLOBALFOUNDRIES Inc.
- Robert J. Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI transistor having an embedded strain layer and a reduced floati...
- Patent number 7,829,421
- Issue date Nov 9, 2010
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having a channel with tensile strain and oriented along...
- Patent number 7,767,540
- Issue date Aug 3, 2010
- Advanced Micro Devices, Inc.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressed interlayer dielectric with reduced probability for void ge...
- Patent number 7,763,507
- Issue date Jul 27, 2010
- GLOBALFOUNDRIES Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with embedded silicon/germanium material on a strained s...
- Patent number 7,763,515
- Issue date Jul 27, 2010
- GLOBALFOUNDRIES Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for reducing crystal defects in transistors with re-grown sh...
- Patent number 7,763,505
- Issue date Jul 27, 2010
- GLOBALFOUNDRIES Inc.
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SYSTEM FOR CONTROLLING THE BRIGHTNESS OF A DISPLAY
- Publication number 20240087502
- Publication date Mar 14, 2024
- GLOBALFOUNDRIES U.S. Inc.
- THORSTEN KAMMLER
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Application
REFLECTIVE SEMICONDUCTOR DEVICE WITH MIRROR ELEMENTS HAVING TWO OXI...
- Publication number 20230402555
- Publication date Dec 14, 2023
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Thorsten E. Kammler
- G02 - OPTICS
Information Patent Application
HIGH VOLTAGE EXTENDED DRAIN MOSFET (EDMOS) DEVICES IN A HIGH-K META...
- Publication number 20220020746
- Publication date Jan 20, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Thorsten E. KAMMLER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATED HIGH VOLTAGE (HV) AND MEDIUM VOLTAGE (MV) FIELD EFFEC...
- Publication number 20210328055
- Publication date Oct 21, 2021
- GLOBALFOUNDRIES Dresden Module One Limited Liability Company & Co. KG
- Nan WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS DEVICES AND MANUFACTURING METHOD THEREOF
- Publication number 20190051565
- Publication date Feb 14, 2019
- GLOBALFOUNDRIES INC.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR FORMING SEMICONDUCTOR LAYERS OF DIFFERENT THICKNESS IN...
- Publication number 20180090386
- Publication date Mar 29, 2018
- GLOBALFOUNDRIES INC.
- Jürgen Faul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND SEMICONDUCTO...
- Publication number 20170170317
- Publication date Jun 15, 2017
- GLOBALFOUNDRIES INC.
- Steffen Sichler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE INCLUDING AT LEAST ONE ELECTRICALLY CONDUCT...
- Publication number 20160247891
- Publication date Aug 25, 2016
- GLOBALFOUNDRIES INC.
- Hans-Peter Moll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJUSTING OF STRAIN CAUSED IN A TRANSISTOR CHANNEL BY SEMICONDUCTOR...
- Publication number 20130307090
- Publication date Nov 21, 2013
- GLOBALFOUNDRIES INC.
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH REDUCED THRESHOLD VARIABILITY HAVING A TH...
- Publication number 20130113019
- Publication date May 9, 2013
- GLOBALFOUNDRIES INC.
- Carsten Reichel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SILICIDATION FOR REPLACEMENT GATE PROCESS
- Publication number 20130092957
- Publication date Apr 18, 2013
- GLOBALFOUNDRIES INC.
- Indradeep Sen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING A SEMICONDUCTOR IC HAVING A HARDENED SHALLOW...
- Publication number 20120329239
- Publication date Dec 27, 2012
- GLOBALFOUNDRIES Inc.
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW PN JUNCTION FORMED BY IN SITU DOPING DURING SELECTIVE GROWT...
- Publication number 20120032278
- Publication date Feb 9, 2012
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SILICIDATION FOR REPLACEMENT GATE PROCESS
- Publication number 20120018816
- Publication date Jan 26, 2012
- GLOBALFOUNDRIES INC.
- Indradeep Sen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING THE CREATION OF CHARGE TRAPS AT GATE DIELECTRICS IN MOS TR...
- Publication number 20110045665
- Publication date Feb 24, 2011
- GLOBALFOUNDRIES INC.
- Martin Trentzsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF A CHANNEL SEMICONDUCTOR ALLOY BY DEPOSITING A HARD MAS...
- Publication number 20110027952
- Publication date Feb 3, 2011
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LEAKAGE CONTROL IN FIELD EFFECT TRANSISTORS BASED ON AN IMPLANTATIO...
- Publication number 20110024846
- Publication date Feb 3, 2011
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USING HIGH-K DIELECTRICS AS HIGHLY SELECTIVE ETCH STOP MATERIALS IN...
- Publication number 20110024805
- Publication date Feb 3, 2011
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCING DEPOSITION UNIFORMITY OF A CHANNEL SEMICONDUCTOR ALLOY BY...
- Publication number 20100289094
- Publication date Nov 18, 2010
- Carsten Reichel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING A CHANNEL WITH TENSILE STRAIN AND ORIENTED ALONG...
- Publication number 20100252866
- Publication date Oct 7, 2010
- Advanced Micro Devices, Inc.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A FIELD EFFECT TRANSISTOR
- Publication number 20100181619
- Publication date Jul 22, 2010
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ADJUSTING OF STRAIN CAUSED IN A TRANSISTOR CHANNEL BY SEMICONDUCTOR...
- Publication number 20100164016
- Publication date Jul 1, 2010
- Stephan Kronholz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR PROVIDING STRESS SOURCES IN TRANSISTORS IN CLOSE PROX...
- Publication number 20100155850
- Publication date Jun 24, 2010
- Advanced Micro Devices, Inc.
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW PN JUNCTION FORMED BY IN SITU DOPING DURING SELECTIVE GROWT...
- Publication number 20100025779
- Publication date Feb 4, 2010
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE GATE AND TRI-GATE TRANSISTOR FORMED ON A BULK SUBSTRATE AND...
- Publication number 20090321836
- Publication date Dec 31, 2009
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING THE CREATION OF CHARGE TRAPS AT GATE DIELECTRICS IN MOS TR...
- Publication number 20090170339
- Publication date Jul 2, 2009
- Martin Trentzsch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED INTERLAYER DIELECTRIC WITH REDUCED PROBABILITY FOR VOID GE...
- Publication number 20090140396
- Publication date Jun 4, 2009
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20090032888
- Publication date Feb 5, 2009
- Advanced Micro Devices, Inc.
- William G. En
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI TRANSISTOR HAVING DRAIN AND SOURCE REGIONS OF REDUCED LENGTH AN...
- Publication number 20080237712
- Publication date Oct 2, 2008
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SILICON/GERMANIUM CONTAINING DRAIN/SOURCE REGION...
- Publication number 20080182371
- Publication date Jul 31, 2008
- Andreas Gehring
- H01 - BASIC ELECTRIC ELEMENTS

Thorsten Kammler

Person

Patents Grantslast 30 patents

High voltage extended drain MOSFET (EDMOS) devices in a high-k meta...

Co-integrated high voltage (HV) and medium voltage (MV) field effec...

Process for forming semiconductor layers of different thickness in...

Method of forming a semiconductor device structure using differing...

Method of forming a gate mask for fabricating a structure of gate l...

Semiconductor structure including at least one electrically conduct...

SOI transistor having drain and source regions of reduced length an...

Shallow pn junction formed by in situ doping during selective growt...

Self-aligned silicidation for replacement gate process

Semiconductor device with reduced threshold variability having a th...

Method for forming silicon/germanium containing drain/source region...

Methods of fabricating a semiconductor IC having a hardened shallow...

Adjusting of strain caused in a transistor channel by semiconductor...

Leakage control in field effect transistors based on an implantatio...

Method of forming a field effect transistor

Self-aligned silicidation for replacement gate process

Enhancing deposition uniformity of a channel semiconductor alloy by...

Formation of a channel semiconductor alloy by depositing a hard mas...

Technique for providing stress sources in transistors in close prox...

Using high-k dielectrics as highly selective etch stop materials in...

Reducing the creation of charge traps at gate dielectrics in MOS tr...

Method for forming double gate and tri-gate transistors on a bulk s...

Shallow PN junction formed by in situ doping during selective growt...

Transistor having a channel with tensile strain and oriented along...

Multi-silicide system in integrated circuit technology

SOI transistor having an embedded strain layer and a reduced floati...

Transistor having a channel with tensile strain and oriented along...

Stressed interlayer dielectric with reduced probability for void ge...

Transistor with embedded silicon/germanium material on a strained s...

Method for reducing crystal defects in transistors with re-grown sh...

Patents Applicationslast 30 patents

SYSTEM FOR CONTROLLING THE BRIGHTNESS OF A DISPLAY

REFLECTIVE SEMICONDUCTOR DEVICE WITH MIRROR ELEMENTS HAVING TWO OXI...

HIGH VOLTAGE EXTENDED DRAIN MOSFET (EDMOS) DEVICES IN A HIGH-K META...

CO-INTEGRATED HIGH VOLTAGE (HV) AND MEDIUM VOLTAGE (MV) FIELD EFFEC...

CMOS DEVICES AND MANUFACTURING METHOD THEREOF

PROCESS FOR FORMING SEMICONDUCTOR LAYERS OF DIFFERENT THICKNESS IN...

METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND SEMICONDUCTO...

SEMICONDUCTOR STRUCTURE INCLUDING AT LEAST ONE ELECTRICALLY CONDUCT...

ADJUSTING OF STRAIN CAUSED IN A TRANSISTOR CHANNEL BY SEMICONDUCTOR...

SEMICONDUCTOR DEVICE WITH REDUCED THRESHOLD VARIABILITY HAVING A TH...

SELF-ALIGNED SILICIDATION FOR REPLACEMENT GATE PROCESS

METHODS OF FABRICATING A SEMICONDUCTOR IC HAVING A HARDENED SHALLOW...

SHALLOW PN JUNCTION FORMED BY IN SITU DOPING DURING SELECTIVE GROWT...

SELF-ALIGNED SILICIDATION FOR REPLACEMENT GATE PROCESS

REDUCING THE CREATION OF CHARGE TRAPS AT GATE DIELECTRICS IN MOS TR...

FORMATION OF A CHANNEL SEMICONDUCTOR ALLOY BY DEPOSITING A HARD MAS...

LEAKAGE CONTROL IN FIELD EFFECT TRANSISTORS BASED ON AN IMPLANTATIO...

USING HIGH-K DIELECTRICS AS HIGHLY SELECTIVE ETCH STOP MATERIALS IN...

ENHANCING DEPOSITION UNIFORMITY OF A CHANNEL SEMICONDUCTOR ALLOY BY...

TRANSISTOR HAVING A CHANNEL WITH TENSILE STRAIN AND ORIENTED ALONG...

METHOD OF FORMING A FIELD EFFECT TRANSISTOR

ADJUSTING OF STRAIN CAUSED IN A TRANSISTOR CHANNEL BY SEMICONDUCTOR...

TECHNIQUE FOR PROVIDING STRESS SOURCES IN TRANSISTORS IN CLOSE PROX...

SHALLOW PN JUNCTION FORMED BY IN SITU DOPING DURING SELECTIVE GROWT...

DOUBLE GATE AND TRI-GATE TRANSISTOR FORMED ON A BULK SUBSTRATE AND...

REDUCING THE CREATION OF CHARGE TRAPS AT GATE DIELECTRICS IN MOS TR...

STRESSED INTERLAYER DIELECTRIC WITH REDUCED PROBABILITY FOR VOID GE...

SEMICONDUCTOR DEVICE

SOI TRANSISTOR HAVING DRAIN AND SOURCE REGIONS OF REDUCED LENGTH AN...

METHOD FOR FORMING SILICON/GERMANIUM CONTAINING DRAIN/SOURCE REGION...