Tianhong Yan

Person

Saratoga, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
High capacity memory circuit with low effective latency
- Patent number 12,073,082
- Issue date Aug 27, 2024
- SUNRISE MEMORY CORPORATION
- Youn Cheul Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Process for forming a vertical thin-film transistor that serves as...
- Patent number 11,910,612
- Issue date Feb 20, 2024
- SUNRISE MEMORY CORPORATION
- Tianhong Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional vertical nor flash thin-film transistor strings
- Patent number 11,758,727
- Issue date Sep 12, 2023
- SUNRISE MEMORY CORPORATION
- Eli Harari
- G11 - INFORMATION STORAGE
Information Patent Grant
High capacity memory circuit with low effective latency
- Patent number 11,675,500
- Issue date Jun 13, 2023
- SUNRISE MEMORY CORPORATION
- Youn Cheul Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Vertical thin-film transistor and application as bit-line connector...
- Patent number 11,610,914
- Issue date Mar 21, 2023
- SUNRISE MEMORY CORPORATION
- Tianhong Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical thing-film transistor and application as bit-line connecto...
- Patent number 11,398,492
- Issue date Jul 26, 2022
- SUNRISE MEMORY CORPORATION
- Tianhong Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional vertical NOR flash thin-film transistor strings
- Patent number 11,049,879
- Issue date Jun 29, 2021
- SUNRISE MEMORY CORPORATION
- Eli Harari
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional vertical NOR flash thin-film transistor strings
- Patent number 10,854,634
- Issue date Dec 1, 2020
- SUNRISE MEMORY CORPORATION
- Eli Harari
- G11 - INFORMATION STORAGE
Information Patent Grant
State change detection for two-terminal memory
- Patent number 10,796,751
- Issue date Oct 6, 2020
- Crossbar, Inc.
- Sang Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Read operation with data latch and signal termination for 1TNR memo...
- Patent number 10,475,511
- Issue date Nov 12, 2019
- Crossbar, Inc.
- Lin Shih Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Optimal write method for a ferroelectric memory
- Patent number 10,283,183
- Issue date May 7, 2019
- AUCMOS Technologies USA, Inc.
- Tianhong Yan
- G11 - INFORMATION STORAGE
Information Patent Grant
State change detection for two-terminal memory utilizing current mi...
- Patent number 10,199,093
- Issue date Feb 5, 2019
- Crossbar, Inc.
- Sang Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Read operation with data latch and signal termination for 1TNR memo...
- Patent number 10,134,469
- Issue date Nov 20, 2018
- Crossbar, Inc.
- Lin Shih Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Shaped data associated with an erase operation
- Patent number 10,074,427
- Issue date Sep 11, 2018
- SanDisk Technologies LLC
- Idan Alrod
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric random access memory (FeRAM) array with segmented pla...
- Patent number 9,972,374
- Issue date May 15, 2018
- AUCMOS Technologies USA, Inc.
- Tianhong Yan
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory hole bit line structures
- Patent number 9,922,709
- Issue date Mar 20, 2018
- SanDisk Technologies LLC
- Perumal Ratnam
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile FeSRAM cell capable of non-destructive read operations
- Patent number 9,899,085
- Issue date Feb 20, 2018
- AUCMOS Technologies USA, Inc.
- Tianhong Yan
- G11 - INFORMATION STORAGE
Information Patent Grant
Independent sense amplifier addressing and quota sharing in non-vol...
- Patent number 9,837,152
- Issue date Dec 5, 2017
- SanDisk Technologies LLC
- Gopinath Balakrishnan
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric memory cell without a plate line
- Patent number 9,812,204
- Issue date Nov 7, 2017
- AUCMOS Technologies USA, Inc.
- Tianhong Yan
- G11 - INFORMATION STORAGE
Information Patent Grant
Disturb condition detection for a resistive random access memory
- Patent number 9,734,903
- Issue date Aug 15, 2017
- SanDisk Technologies LLC
- Ran Zamir
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional array of re-programmable non-volatile memory elem...
- Patent number 9,721,653
- Issue date Aug 1, 2017
- SanDisk Technologies LLC
- Tianhong Yan
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods and apparatus for vertical cross point re-RAM array bias ca...
- Patent number 9,715,925
- Issue date Jul 25, 2017
- SanDisk Technologies LLC
- Chang Siau
- G11 - INFORMATION STORAGE
Information Patent Grant
State change detection for two-terminal memory during application o...
- Patent number 9,659,642
- Issue date May 23, 2017
- Crossbar, Inc.
- Sang Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and methods for sensing hard bit and soft bits
- Patent number 9,595,325
- Issue date Mar 14, 2017
- SanDisk Technologies LLC
- Chang Siau
- G11 - INFORMATION STORAGE
Information Patent Grant
Reading resistive random access memory based on leakage current
- Patent number 9,583,183
- Issue date Feb 28, 2017
- SanDisk Technologies LLC
- Omer Fainzilber
- G11 - INFORMATION STORAGE
Information Patent Grant
Independent sense amplifier addressing and quota sharing in non-vol...
- Patent number 9,564,215
- Issue date Feb 7, 2017
- SanDisk Technologies LLC
- Gopinath Balakrishnan
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiple layer forming scheme for vertical cross point reram
- Patent number 9,543,009
- Issue date Jan 10, 2017
- SanDisk Technologies LLC
- Chang Siau
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual polarity read operation
- Patent number 9,484,089
- Issue date Nov 1, 2016
- SanDisk Technologies LLC
- Alexander Bazarsky
- G11 - INFORMATION STORAGE
Information Patent Grant
Controlling adjustable resistance bit lines connected to word line...
- Patent number 9,484,093
- Issue date Nov 1, 2016
- SanDisk Technologies LLC
- Perumal Ratnam
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical cross point reram forming method
- Patent number 9,472,280
- Issue date Oct 18, 2016
- SanDisk Technologies LLC
- Chang Siau
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
HIGH CAPACITY MEMORY CIRCUIT WITH LOW EFFECTIVE LATENCY
- Publication number 20240345736
- Publication date Oct 17, 2024
- Sunrise Memory Corporation
- Youn Cheul Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
VERTICAL THIN-FILM TRANSISTOR AND APPLICATION AS BIT-LINE CONNECTOR...
- Publication number 20240179919
- Publication date May 30, 2024
- Sunrise Memory Corporation
- Tianhong Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL VERTICAL NOR FLASH THIN-FILM TRANSISTOR STRINGS
- Publication number 20230371256
- Publication date Nov 16, 2023
- Sunrise Memory Corporation
- Eli Harari
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH CAPACITY MEMORY CIRCUIT WITH LOW EFFECTIVE LATENCY
- Publication number 20230259283
- Publication date Aug 17, 2023
- Sunrise Memory Corporation
- Youn Cheul Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
VERTICAL THIN-FILM TRANSISTOR AND APPLICATION AS BIT-LINE CONNECTOR...
- Publication number 20220293623
- Publication date Sep 15, 2022
- Sunrise Memory Corporation
- Tianhong Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL VERTICAL NOR FLASH THIN-FILM TRANSISTOR STRINGS
- Publication number 20210280604
- Publication date Sep 9, 2021
- SUNRISE MEMORY CORPORATION
- Eli Harari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH CAPACITY MEMORY CIRCUIT WITH LOW EFFECTIVE LATENCY
- Publication number 20210247910
- Publication date Aug 12, 2021
- SUNRISE MEMORY CORPORATION
- Youn Cheul Kim
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
VERTICAL THIN-FILM TRANSISTOR AND APPLICATION AS BIT-LINE CONNECTOR...
- Publication number 20210210506
- Publication date Jul 8, 2021
- SUNRISE MEMORY CORPORATION
- Tianhong Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL VERTICAL NOR FLASH THIN-FILM TRANSISTOR STRINGS
- Publication number 20210043650
- Publication date Feb 11, 2021
- SUNRISE MEMORY CORPORATION
- Eli Harari
- G11 - INFORMATION STORAGE
Information Patent Application
Three-dimensional vertical NOR Flash Thin-Film Transistor Strings
- Publication number 20200312876
- Publication date Oct 1, 2020
- SUNRISE MEMORY CORPORATION
- Eli Harari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH EMBEDDED HIGH-BANDWIDTH, HIGH-CAPACITY MEMORY USING WAF...
- Publication number 20200258897
- Publication date Aug 13, 2020
- SUNRISE MEMORY CORPORATION
- Tianhong Yan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OPTIMAL WRITE METHOD FOR A FERROELECTRIC MEMORY
- Publication number 20180122453
- Publication date May 3, 2018
- AUCMOS Technologies USA, Inc.
- Tianhong Yan
- G11 - INFORMATION STORAGE
Information Patent Application
FERROELECTRIC RANDOM ACCESS MEMORY (FERAM) ARRAY WITH SEGMENTED PLA...
- Publication number 20180122451
- Publication date May 3, 2018
- AUCMOS Technologies USA, Inc.
- Tianhong Yan
- G11 - INFORMATION STORAGE
Information Patent Application
Independent Sense Amplifier Addressing And Quota Sharing In Non-Vol...
- Publication number 20170110189
- Publication date Apr 20, 2017
- SanDisk Technologies LLC
- Gopinath Balakrishnan
- G11 - INFORMATION STORAGE
Information Patent Application
Three-Dimensional Array of Re-Programmable Non-Volatile Memory Elem...
- Publication number 20170004881
- Publication date Jan 5, 2017
- SanDisk Technologies LLC
- Tianhong Yan
- G11 - INFORMATION STORAGE
Information Patent Application
Independent Sense Amplifier Addressing And Quota Sharing In Non-Vol...
- Publication number 20160232969
- Publication date Aug 11, 2016
- SanDisk 3D LLC
- Gopinath Balakrishnan
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS AND METHODS FOR SENSING HARD BIT AND SOFT BITS
- Publication number 20160217854
- Publication date Jul 28, 2016
- SANDISK TECHNOLOGIES INC.
- Chang Siau
- G11 - INFORMATION STORAGE
Information Patent Application
INDEPENDENT SET/RESET PROGRAMMING SCHEME
- Publication number 20160139828
- Publication date May 19, 2016
- SanDisk 3D LLC
- Tianhong Yan
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
HEALTH DATA ASSOCIATED WITH A RESISTANCE-BASED MEMORY
- Publication number 20160141029
- Publication date May 19, 2016
- SanDisk Technologies Inc.
- ARIEL NAVON
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DISTURB CONDITION DETECTION FOR A RESISTIVE RANDOM ACCESS MEMORY
- Publication number 20160133322
- Publication date May 12, 2016
- SanDisk Technologies Inc.
- Ran ZAMIR
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SHAPED DATA ASSOCIATED WITH AN ERASE OPERATION
- Publication number 20160133324
- Publication date May 12, 2016
- SanDisk Technologies Inc.
- IDAN ALROD
- G11 - INFORMATION STORAGE
Information Patent Application
MODIFIED WRITE PROCESS BASED ON A POWER CHARACTERISTIC FOR A DATA S...
- Publication number 20160109926
- Publication date Apr 21, 2016
- SanDisk Technologies Inc.
- STELLA ACHTENBERG
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DUAL POLARITY READ OPERATION
- Publication number 20160111150
- Publication date Apr 21, 2016
- SANDISK TECHNOLOGIES INC.
- ALEXANDER BAZARSKY
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHODS AND APPARATUS FOR VERTICAL CROSS POINT RE-RAM ARRAY BIAS CA...
- Publication number 20160093374
- Publication date Mar 31, 2016
- SanDisk 3D LLC
- Chang Siau
- G11 - INFORMATION STORAGE
Information Patent Application
READING RESISTIVE RANDOM ACCESS MEMORY BASED ON LEAKAGE CURRENT
- Publication number 20160093372
- Publication date Mar 31, 2016
- SanDisk Technologies Inc.
- OMER FAINZILBER
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
APPARATUS AND METHODS FOR SENSING HARD BIT AND SOFT BITS
- Publication number 20160093373
- Publication date Mar 31, 2016
- SanDisk 3D LLC
- Chang Siau
- G11 - INFORMATION STORAGE
Information Patent Application
MULTIPLE LAYER FORMING SCHEME FOR VERTICAL CROSS POINT RERAM
- Publication number 20160042789
- Publication date Feb 11, 2016
- SanDisk 3D LLC
- Chang Siau
- G11 - INFORMATION STORAGE
Information Patent Application
REDUCING DISTURB WITH ADJUSTABLE RESISTANCE BIT LINE STRUCTURES
- Publication number 20160019957
- Publication date Jan 21, 2016
- SanDisk 3D LLC
- Perumal Ratnam
- G11 - INFORMATION STORAGE
Information Patent Application
OPERATION MODES FOR ADJUSTABLE RESISTANCE BIT LINE STRUCTURES
- Publication number 20160019960
- Publication date Jan 21, 2016
- SanDisk 3D LLC
- Perumal Ratnam
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROLLING ADJUSTABLE RESISTANCE BIT LINES CONNECTED TO WORD LINE...
- Publication number 20160019961
- Publication date Jan 21, 2016
- SanDisk 3D LLC
- Perumal Ratnam
- G11 - INFORMATION STORAGE

Tianhong Yan

Person

Patents Grantslast 30 patents

High capacity memory circuit with low effective latency

Process for forming a vertical thin-film transistor that serves as...

Three-dimensional vertical nor flash thin-film transistor strings

High capacity memory circuit with low effective latency

Vertical thin-film transistor and application as bit-line connector...

Vertical thing-film transistor and application as bit-line connecto...

Three-dimensional vertical NOR flash thin-film transistor strings

Three-dimensional vertical NOR flash thin-film transistor strings

State change detection for two-terminal memory

Read operation with data latch and signal termination for 1TNR memo...

Optimal write method for a ferroelectric memory

State change detection for two-terminal memory utilizing current mi...

Read operation with data latch and signal termination for 1TNR memo...

Shaped data associated with an erase operation

Ferroelectric random access memory (FeRAM) array with segmented pla...

Memory hole bit line structures

Non-volatile FeSRAM cell capable of non-destructive read operations

Independent sense amplifier addressing and quota sharing in non-vol...

Ferroelectric memory cell without a plate line

Disturb condition detection for a resistive random access memory

Three-dimensional array of re-programmable non-volatile memory elem...

Methods and apparatus for vertical cross point re-RAM array bias ca...

State change detection for two-terminal memory during application o...

Apparatus and methods for sensing hard bit and soft bits

Reading resistive random access memory based on leakage current

Independent sense amplifier addressing and quota sharing in non-vol...

Multiple layer forming scheme for vertical cross point reram

Dual polarity read operation

Controlling adjustable resistance bit lines connected to word line...

Vertical cross point reram forming method

Patents Applicationslast 30 patents

HIGH CAPACITY MEMORY CIRCUIT WITH LOW EFFECTIVE LATENCY

VERTICAL THIN-FILM TRANSISTOR AND APPLICATION AS BIT-LINE CONNECTOR...

THREE-DIMENSIONAL VERTICAL NOR FLASH THIN-FILM TRANSISTOR STRINGS

HIGH CAPACITY MEMORY CIRCUIT WITH LOW EFFECTIVE LATENCY

VERTICAL THIN-FILM TRANSISTOR AND APPLICATION AS BIT-LINE CONNECTOR...

THREE-DIMENSIONAL VERTICAL NOR FLASH THIN-FILM TRANSISTOR STRINGS

HIGH CAPACITY MEMORY CIRCUIT WITH LOW EFFECTIVE LATENCY

VERTICAL THIN-FILM TRANSISTOR AND APPLICATION AS BIT-LINE CONNECTOR...

THREE-DIMENSIONAL VERTICAL NOR FLASH THIN-FILM TRANSISTOR STRINGS

Three-dimensional vertical NOR Flash Thin-Film Transistor Strings

DEVICE WITH EMBEDDED HIGH-BANDWIDTH, HIGH-CAPACITY MEMORY USING WAF...

OPTIMAL WRITE METHOD FOR A FERROELECTRIC MEMORY

FERROELECTRIC RANDOM ACCESS MEMORY (FERAM) ARRAY WITH SEGMENTED PLA...

Independent Sense Amplifier Addressing And Quota Sharing In Non-Vol...

Three-Dimensional Array of Re-Programmable Non-Volatile Memory Elem...

Independent Sense Amplifier Addressing And Quota Sharing In Non-Vol...

APPARATUS AND METHODS FOR SENSING HARD BIT AND SOFT BITS

INDEPENDENT SET/RESET PROGRAMMING SCHEME

HEALTH DATA ASSOCIATED WITH A RESISTANCE-BASED MEMORY

DISTURB CONDITION DETECTION FOR A RESISTIVE RANDOM ACCESS MEMORY

SHAPED DATA ASSOCIATED WITH AN ERASE OPERATION

MODIFIED WRITE PROCESS BASED ON A POWER CHARACTERISTIC FOR A DATA S...

DUAL POLARITY READ OPERATION

METHODS AND APPARATUS FOR VERTICAL CROSS POINT RE-RAM ARRAY BIAS CA...

READING RESISTIVE RANDOM ACCESS MEMORY BASED ON LEAKAGE CURRENT

APPARATUS AND METHODS FOR SENSING HARD BIT AND SOFT BITS

MULTIPLE LAYER FORMING SCHEME FOR VERTICAL CROSS POINT RERAM

REDUCING DISTURB WITH ADJUSTABLE RESISTANCE BIT LINE STRUCTURES

OPERATION MODES FOR ADJUSTABLE RESISTANCE BIT LINE STRUCTURES

CONTROLLING ADJUSTABLE RESISTANCE BIT LINES CONNECTED TO WORD LINE...