Tien-I Bao

Person

Dayuan Township, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Structure and method for a low-k dielectric with pillar-type air-gaps
- Patent number 12,261,121
- Issue date Mar 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih Wei Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFETs and methods of forming FinFETs
- Patent number 12,087,861
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chin-Hsiang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Porogen bonded gap filling material in semiconductor manufacturing
- Patent number 11,984,316
- Issue date May 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Jiun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch damage and ESL free dual damascene metal interconnect
- Patent number 11,955,376
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sunil Kumar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Via connection to a partially filled trench
- Patent number 11,929,258
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spacer etching process for integrated circuit design
- Patent number 11,854,820
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ru-Gun Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-k gate spacer and methods for forming the same
- Patent number 11,855,182
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method making the same
- Patent number 11,830,808
- Issue date Nov 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Yen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming semiconductor structure with high aspect ratio
- Patent number 11,823,960
- Issue date Nov 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Han-Pin Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for a low-K dielectric with pillar-type air-gaps
- Patent number 11,728,271
- Issue date Aug 15, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih Wei Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Porogen bonded gap filling material in semiconductor manufacturing
- Patent number 11,658,120
- Issue date May 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Jiun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method of forming a porous low-k structure
- Patent number 11,637,010
- Issue date Apr 25, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Jiun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structure having an etch stop layer over conductive lines
- Patent number 11,569,124
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for forming self-aligned via with selectively...
- Patent number 11,532,552
- Issue date Dec 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yung-Hsu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for semiconductor device having gate spacer pr...
- Patent number 11,495,465
- Issue date Nov 8, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih Wei Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cyclic spin-on coating process for forming dielectric material
- Patent number 11,450,526
- Issue date Sep 20, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Je-Ming Kuo
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Grant
FinFETs and methods of forming FinFETs
- Patent number 11,411,113
- Issue date Aug 9, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chin-Hsiang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method making the same
- Patent number 11,328,991
- Issue date May 10, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Yen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Package structure and method for forming the same
- Patent number 11,239,142
- Issue date Feb 1, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Fan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure and device
- Patent number 11,222,826
- Issue date Jan 11, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch damage and ESL free dual damascene metal interconnect
- Patent number 11,171,041
- Issue date Nov 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sunil Kumar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication polymer waveguide
- Patent number 11,125,940
- Issue date Sep 21, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hao Tseng
- G02 - OPTICS
Information Patent Grant
Via connection to a partially filled trench
- Patent number 11,087,994
- Issue date Aug 10, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-k dielectric and processes for forming same
- Patent number 11,062,901
- Issue date Jul 13, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia Cheng Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming interlayer dielectric material by spin-on metal oxide depos...
- Patent number 11,049,811
- Issue date Jun 29, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chi-Lin Teng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having voids and method of forming same
- Patent number 11,011,421
- Issue date May 18, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yung-Hsu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adhesion promoter apparatus and method
- Patent number 10,983,278
- Issue date Apr 20, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Hao Tseng
- G02 - OPTICS
Information Patent Grant
Schemes for forming barrier layers for copper in interconnect struc...
- Patent number 10,943,867
- Issue date Mar 9, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hua Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gap-fill method having improved gap-fill capability
- Patent number 10,943,820
- Issue date Mar 9, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-k dielectric and processes for forming same
- Patent number 10,910,216
- Issue date Feb 2, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia Cheng Chou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VIA CONNECTION TO A PARTIALLY FILLED TRENCH
- Publication number 20240213034
- Publication date Jun 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-K Gate Spacer and Methods for Forming the Same
- Publication number 20240113202
- Publication date Apr 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD MAKING THE SAME
- Publication number 20240088025
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Yen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE WITH HIGH ASPECT RATIO
- Publication number 20240047276
- Publication date Feb 8, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Pin CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for a Low-K Dielectric With Pillar-Type Air-Gaps
- Publication number 20230369228
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih Wei Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Porogen Bonded Gap Filling Material In Semiconductor Manufacturing
- Publication number 20230299003
- Publication date Sep 21, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Jiun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System And Method Of Forming A Porous Low-K Structure
- Publication number 20230260781
- Publication date Aug 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Jiun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cyclic Spin-On Coating Process for Forming Dielectric Material
- Publication number 20220367180
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Je-Ming Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFETs and Methods of Forming FinFETs
- Publication number 20220359756
- Publication date Nov 10, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chin-Hsiang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Structure for Semiconductor Device Having Gate Spacer Pr...
- Publication number 20220301875
- Publication date Sep 22, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih Wei Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure and Method Making the Same
- Publication number 20220262726
- Publication date Aug 18, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Yen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCH DAMAGE AND ESL FREE DUAL DAMASCENE METAL INTERCONNECT
- Publication number 20220059404
- Publication date Feb 24, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sunil Kumar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Via Connection to a Partially Filled Trench
- Publication number 20210366726
- Publication date Nov 25, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-k Dielectric and Processes for Forming Same
- Publication number 20210183646
- Publication date Jun 17, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia Cheng Chou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PACKAGE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20210118782
- Publication date Apr 22, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chih-Fan HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Structure for Semiconductor Device Having Gate Spacer Pr...
- Publication number 20210111029
- Publication date Apr 15, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih Wei Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Apparatus for Forming Self-Aligned Via with Selectively...
- Publication number 20210098362
- Publication date Apr 1, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yung-Hsu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Porogen Bonded Gap Filling Material in Semiconductor Manufacturing
- Publication number 20210098378
- Publication date Apr 1, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Jiun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-K Gate Spacer and Methods for Forming the Same
- Publication number 20210057546
- Publication date Feb 25, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wen-Kai Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method for a Low-K Dielectric With Pillar-Type Air-Gaps
- Publication number 20210043569
- Publication date Feb 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chih Wei Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE WITH HIGH ASPECT RATIO
- Publication number 20210043523
- Publication date Feb 11, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Han-Pin CHUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Interconnect Structure Having an Etch Stop Layer Over Conductive Lines
- Publication number 20210035856
- Publication date Feb 4, 2021
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Voids and Method of Forming Same
- Publication number 20200411375
- Publication date Dec 31, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yung-Hsu Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAP-FILL METHOD HAVING IMPROVED GAP-FILL CAPABILITY
- Publication number 20200365454
- Publication date Nov 19, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Wan-Yi KAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFETs and Methods of Forming FinFETs
- Publication number 20200343384
- Publication date Oct 29, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chin-Hsiang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure and Method Making the Same
- Publication number 20200328152
- Publication date Oct 15, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsin-Yen Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and Method of Forming a Porous Low-K Structure
- Publication number 20200303184
- Publication date Sep 24, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Jiun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spacer Etching Process For Integrated Circuit Design
- Publication number 20200286738
- Publication date Sep 10, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- RU-GUN LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Via Connection to a Partially Filled Trench
- Publication number 20200152476
- Publication date May 14, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shih-Ming Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURE AND DEVICE
- Publication number 20200083109
- Publication date Mar 12, 2020
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Structure and method for a low-k dielectric with pillar-type air-gaps

FinFETs and methods of forming FinFETs

Porogen bonded gap filling material in semiconductor manufacturing

Etch damage and ESL free dual damascene metal interconnect

Via connection to a partially filled trench

Spacer etching process for integrated circuit design

Low-k gate spacer and methods for forming the same

Semiconductor structure and method making the same

Method for forming semiconductor structure with high aspect ratio

Structure and method for a low-K dielectric with pillar-type air-gaps

Porogen bonded gap filling material in semiconductor manufacturing

System and method of forming a porous low-k structure

Interconnect structure having an etch stop layer over conductive lines

Method and apparatus for forming self-aligned via with selectively...

Method and structure for semiconductor device having gate spacer pr...

Cyclic spin-on coating process for forming dielectric material

FinFETs and methods of forming FinFETs

Semiconductor structure and method making the same

Package structure and method for forming the same

FinFET structure and device

Etch damage and ESL free dual damascene metal interconnect

Method of fabrication polymer waveguide

Via connection to a partially filled trench

Low-k dielectric and processes for forming same

Forming interlayer dielectric material by spin-on metal oxide depos...

Semiconductor device having voids and method of forming same

Adhesion promoter apparatus and method

Schemes for forming barrier layers for copper in interconnect struc...

Gap-fill method having improved gap-fill capability

Low-k dielectric and processes for forming same

Patents Applicationslast 30 patents

VIA CONNECTION TO A PARTIALLY FILLED TRENCH

Low-K Gate Spacer and Methods for Forming the Same

SEMICONDUCTOR STRUCTURE AND METHOD MAKING THE SAME

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE WITH HIGH ASPECT RATIO

Structure and Method for a Low-K Dielectric With Pillar-Type Air-Gaps

Porogen Bonded Gap Filling Material In Semiconductor Manufacturing

System And Method Of Forming A Porous Low-K Structure

Cyclic Spin-On Coating Process for Forming Dielectric Material

FinFETs and Methods of Forming FinFETs

Method and Structure for Semiconductor Device Having Gate Spacer Pr...

Semiconductor Structure and Method Making the Same

ETCH DAMAGE AND ESL FREE DUAL DAMASCENE METAL INTERCONNECT

Via Connection to a Partially Filled Trench

Low-k Dielectric and Processes for Forming Same

PACKAGE STRUCTURE AND METHOD FOR FORMING THE SAME

Method and Structure for Semiconductor Device Having Gate Spacer Pr...

Method and Apparatus for Forming Self-Aligned Via with Selectively...

Porogen Bonded Gap Filling Material in Semiconductor Manufacturing

Low-K Gate Spacer and Methods for Forming the Same

Structure and Method for a Low-K Dielectric With Pillar-Type Air-Gaps

METHOD FOR FORMING SEMICONDUCTOR STRUCTURE WITH HIGH ASPECT RATIO

Interconnect Structure Having an Etch Stop Layer Over Conductive Lines

Semiconductor Device Having Voids and Method of Forming Same

GAP-FILL METHOD HAVING IMPROVED GAP-FILL CAPABILITY

FinFETs and Methods of Forming FinFETs

Semiconductor Structure and Method Making the Same

System and Method of Forming a Porous Low-K Structure

Spacer Etching Process For Integrated Circuit Design

Via Connection to a Partially Filled Trench

FINFET STRUCTURE AND DEVICE