Tien Ying Luo

Person

Beacon, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dual high-K oxides with SiGe channel
- Patent number RE45955
- Issue date Mar 29, 2016
- FREESCALE SEMICONDUCTOR, INC.
- Tien Ying Luo
- 001 -
Information Patent Grant
Electronic device with a gate electrode having at least two portions
- Patent number 8,659,087
- Issue date Feb 25, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual high-k oxides with sige channel
- Patent number 8,017,469
- Issue date Sep 13, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Tien-Ying Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a gate dielectric by in-situ plasma
- Patent number 7,981,808
- Issue date Jul 19, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Tien Ying Luo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor structure pattern formation
- Patent number 7,829,447
- Issue date Nov 9, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Leo Mathew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of removing defects from a dielectric material in a semicond...
- Patent number 7,776,731
- Issue date Aug 17, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Kurt H. Junker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a deposited oxide layer
- Patent number 7,767,588
- Issue date Aug 3, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Tien Ying Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a gate dielectric
- Patent number 7,741,183
- Issue date Jun 22, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Tien Ying Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer silicon nitride deposition for a semiconductor device
- Patent number 7,700,499
- Issue date Apr 20, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Kurt H. Junker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device with multiple tensile stre...
- Patent number 7,678,698
- Issue date Mar 16, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Xiangzheng Bo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an electronic device including active regions an...
- Patent number 7,651,935
- Issue date Jan 26, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing nanoclusters from selected regions
- Patent number 7,445,984
- Issue date Nov 4, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Rajesh A. Rao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for retaining nanocluster size and electrical characteristic...
- Patent number 7,432,158
- Issue date Oct 7, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Rajesh A. Rao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a nitrided gate dielectric
- Patent number 7,402,472
- Issue date Jul 22, 2008
- FREESCALE SEMICONDUCTOR, INC.
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer dielectric containing diffusion barrier material
- Patent number 7,144,825
- Issue date Dec 5, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a high quality thin dielectric layer
- Patent number 7,001,852
- Issue date Feb 21, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Tien-Ying Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radical oxidation and/or nitridation during metal oxide layer depos...
- Patent number 6,884,685
- Issue date Apr 26, 2005
- Freescale Semiconductors, Inc.
- Tien Ying Luo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
MULTILAYER SILICON NITRIDE DEPOSITION FOR A SEMICONDUCTOR DEVICE
- Publication number 20110210401
- Publication date Sep 1, 2011
- Freescale Semiconductor Inc.
- Kurt H. Junker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL HIGH-K OXIDES WITH SIGE CHANNEL
- Publication number 20100184260
- Publication date Jul 22, 2010
- Tien-Ying Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE WITH A GATE ELECTRODE HAVING AT LEAST TWO PORTIONS
- Publication number 20100090287
- Publication date Apr 15, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A GATE DIELECTRIC BY IN-SITU PLASMA
- Publication number 20100081290
- Publication date Apr 1, 2010
- Tien Ying Luo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING A GATE DIELECTRIC
- Publication number 20090221120
- Publication date Sep 3, 2009
- Tien Ying Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REMOVING DEFECTS FROM A DIELECTRIC MATERIAL IN A SEMICOND...
- Publication number 20090075434
- Publication date Mar 19, 2009
- Kurt H. Junker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTIPLE TENSILE STRESSOR LAYERS AND METHOD
- Publication number 20080272411
- Publication date Nov 6, 2008
- Xiangzheng Bo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilayer silicon nitride deposition for a semiconductor device
- Publication number 20080173908
- Publication date Jul 24, 2008
- Freescale Semiconductor, Inc.
- Kurt H. Junker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multilayer silicon nitride deposition for a semiconductor device
- Publication number 20080173986
- Publication date Jul 24, 2008
- Freescale Semiconductor, Inc.
- Kurt H. Junker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REMOVING NANOCLUSTERS FROM SELECTED REGIONS
- Publication number 20080026526
- Publication date Jan 31, 2008
- Rajesh A. Rao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE PATTERN FORMATION
- Publication number 20070269969
- Publication date Nov 22, 2007
- Leo Mathew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A DEPOSITED OXIDE LAYER
- Publication number 20070202645
- Publication date Aug 30, 2007
- Tien Ying Luo
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method for forming a deposited oxide layer
- Publication number 20070202708
- Publication date Aug 30, 2007
- Tien Ying Luo
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor device and method for incorporating a halogen in a di...
- Publication number 20070190711
- Publication date Aug 16, 2007
- Tien Ying Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic device with a gate electrode having at least two portion...
- Publication number 20070069311
- Publication date Mar 29, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making a nitrided gate dielectric
- Publication number 20060194423
- Publication date Aug 31, 2006
- Sangwoo Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma impurification of a metal gate in a semiconductor fabricatio...
- Publication number 20060084217
- Publication date Apr 20, 2006
- Freescale Semiconductor, Inc.
- Tien Ying Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High quality thin dielectric layer and method of making same
- Publication number 20050245019
- Publication date Nov 3, 2005
- Tien-Ying Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-layer dielectric containing diffusion barrier material
- Publication number 20050085092
- Publication date Apr 21, 2005
- Olubunmi O. Adetutu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Radical oxidation and/or nitridation during metal oxide layer depos...
- Publication number 20040161899
- Publication date Aug 19, 2004
- Tien Ying Luo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Tien Ying Luo

Person

Patents Grantslast 30 patents

Dual high-K oxides with SiGe channel

Electronic device with a gate electrode having at least two portions

Dual high-k oxides with sige channel

Method of forming a gate dielectric by in-situ plasma

Semiconductor structure pattern formation

Method of removing defects from a dielectric material in a semicond...

Method for forming a deposited oxide layer

Method of forming a gate dielectric

Multilayer silicon nitride deposition for a semiconductor device

Method of forming a semiconductor device with multiple tensile stre...

Process of forming an electronic device including active regions an...

Method for removing nanoclusters from selected regions

Method for retaining nanocluster size and electrical characteristic...

Method of making a nitrided gate dielectric

Multi-layer dielectric containing diffusion barrier material

Method of making a high quality thin dielectric layer

Radical oxidation and/or nitridation during metal oxide layer depos...

Patents Applicationslast 30 patents

MULTILAYER SILICON NITRIDE DEPOSITION FOR A SEMICONDUCTOR DEVICE

DUAL HIGH-K OXIDES WITH SIGE CHANNEL

ELECTRONIC DEVICE WITH A GATE ELECTRODE HAVING AT LEAST TWO PORTIONS

METHOD OF FORMING A GATE DIELECTRIC BY IN-SITU PLASMA

METHOD OF FORMING A GATE DIELECTRIC

METHOD OF REMOVING DEFECTS FROM A DIELECTRIC MATERIAL IN A SEMICOND...

SEMICONDUCTOR DEVICE WITH MULTIPLE TENSILE STRESSOR LAYERS AND METHOD

Multilayer silicon nitride deposition for a semiconductor device

Multilayer silicon nitride deposition for a semiconductor device

METHOD FOR REMOVING NANOCLUSTERS FROM SELECTED REGIONS

SEMICONDUCTOR STRUCTURE PATTERN FORMATION

METHOD FOR FORMING A DEPOSITED OXIDE LAYER

Method for forming a deposited oxide layer

Semiconductor device and method for incorporating a halogen in a di...

Electronic device with a gate electrode having at least two portion...

Method of making a nitrided gate dielectric

Plasma impurification of a metal gate in a semiconductor fabricatio...

High quality thin dielectric layer and method of making same

Multi-layer dielectric containing diffusion barrier material

Radical oxidation and/or nitridation during metal oxide layer depos...