METHOD FOR FORMING A DEPOSITED OXIDE LAYER

Abstract

An oxide layer formed by deposition is subject to a treatment process to repair bond defects of the oxide layer. In one embodiment, the layer is treated with nitric oxide. In one embodiment, a nitric oxide gas is flowed over the dielectric layer at an elevated temperature. In still another embodiment, the oxide layer is treated with fluorine. A layer is deposited over the oxide layer and a species containing fluorine is ion implanted into the layer. The wafer is heated where the species is driven to the oxide layer.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention may be better understood, and its numerous objects, features, and advantages made apparent to those skilled in the art by referencing the accompanying drawings.

FIG. 1 is a partial side view of one embodiment of a semiconductor device during a processing stage, consistent with one embodiment of the invention;

FIG. 2 is a drawing illustrating exemplary micro-structural defects in a deposited oxide layer, consistent with one embodiment of the invention;

FIG. 3 is a partial side view of one embodiment of a semiconductor device during a processing stage, consistent with one embodiment of the invention;

FIG. 4 is a drawing illustrating exemplary removal of micro-structural defects in a deposited oxide layer, consistent with one embodiment of the invention;

FIG. 5 is a partial side view of one embodiment of a nanocluster device during a processing stage, consistent with one embodiment of the invention;

FIG. 6 is a partial side view of one embodiment of a nanocluster device during a processing stage, consistent with one embodiment of the invention;

FIG. 7 is a partial side view of one embodiment of a nanocluster device during a processing stage, consistent with one embodiment of the invention;

FIG. 8 is a partial side view of one embodiment of a nanocluster device during a processing stage, consistent with one embodiment of the invention; and

FIG. 9 is a partial side view of one embodiment of a nanocluster device during a processing stage, consistent with one embodiment of the invention.

FIG. 10 is a partial side view of one embodiment of a semiconductor device during a processing stage, consistent with one embodiment of the invention.

FIG. 11 is a partial side view of one embodiment of a semiconductor device during a processing stage, consistent with one embodiment of the invention.

FIG. 12 is a partial side view of one embodiment of a semiconductor device during a processing stage, consistent with one embodiment of the invention.

FIG. 13 is a partial side view of one embodiment of a semiconductor device during a processing stage, consistent with one embodiment of the invention.

FIG. 14 is a partial side view of one embodiment of a semiconductor device during a processing stage, consistent with one embodiment of the invention.

FIG. 15 is a partial side view of one embodiment of a semiconductor device during a processing stage, consistent with one embodiment of the invention.

Claims

1. A method for forming a semiconductor device, comprising: providing a substrate;depositing an oxide layer overlying the substrate; andapplying a substance comprising nitric oxide or fluorine to the oxide layer after depositing the oxide layer.

2. The method of claim 1, wherein applying the substance further comprises applying the substance while the semiconductor device is at a temperature in a range of seven hundred degrees Celsius to one thousand one hundred degrees Celsius.

3. The method of claim 1 further comprising forming a charge storage layer prior to depositing the oxide layer.

4. The method of claim 3, wherein the charge storage layer comprises nanoclusters.

5. The method of claim 3 further comprising: forming a conductive layer overlying the oxide layer; andpatterning the conductive layer to form a control gate for a non-volatile memory transistor.

6. The method of claim 1 further comprising performing an oxidation process using oxygen radicals on the semiconductor device after depositing the oxide layer.

7. The method of claim 1, wherein applying a substance comprising nitric oxide or fluorine further comprises applying a substance to remove bond defects in the oxide layer that form undesirable electron traps in the oxide layer.

8. The method of claim 1, wherein applying a substance further comprises: depositing a polysilicon layer overlying the oxide layer;ion implanting a chemical species comprising fluorine into the polysilicon layer; andannealing the semiconductor device to drive fluorine into the oxide layer.

9. The method of claim 1, wherein the applying a substance includes applying a substance including nitric oxide.

10. The method of claim 9 wherein the applying the substance further comprising: flowing a nitric oxide precursor over the oxide layer.

11. The method of claim 10 wherein the flowing a nitric oxide precursor over the oxide layer further comprising: flowing a nitric oxide gas over the oxide layer.

12. The method of claim 1 wherein the oxide layer includes silicon oxide.

13. The method of claim 1, wherein applying a substance includes applying a substance including fluorine.

14. A method for forming a semiconductor device, comprising: providing a substrate;forming a first oxide layer overlying the substrate;forming a charge storage layer overlying the first oxide layer, the charge storage layer comprising nanoclusters;depositing a second oxide layer overlying the charge storage layer; andapplying a substance comprising nitric oxide to the second oxide layer after the depositing the second oxide layer.

15. The method of claim 14 further comprising: forming a conductive layer overlying the second oxide layer; andpatterning the conductive layer to form a control gate for a non-volatile memory transistor.

16. The method of claim 14 wherein the applying a substance comprising nitric oxide further includes flowing a nitric oxide precursor over the second oxide layer.

17. The method of claim 16 wherein the flowing a nitric oxide precursor over the second oxide layer further includes flowing a nitric oxide gas over the second oxide layer.

18. The method of claim 14 wherein the second oxide layer includes silicon oxide.

19. The method of claim 14 wherein the applying a substance comprising nitric oxide to the second oxide layer is performed while heating the semiconductor device at a temperature in a range of seven hundred degrees Celsius to one thousand one hundred degrees Celsius.

20. A method for forming a semiconductor device, comprising: providing a substrate;forming a first oxide layer overlying the substrate;forming a charge storage layer overlying the first oxide layer, the charge storage layer comprising nanoclusters;depositing a second oxide layer overlying the charge storage layer;applying a substance including fluorine to the second oxide layer.

21. The method of claim 20 wherein the applying a substance including fluorine to the second oxide layer further includes: depositing a layer overlying the second oxide layer;ion implanting a chemical species comprising fluorine into the layer; andannealing the semiconductor device to drive fluorine into the second oxide layer.

22. The method of claim 21, further comprising removing the layer after annealing the semiconductor device.

23. The method of claim 21 wherein the layer includes polysilicon, the method further comprising: patterning the layer to form a control gate for a non-volatile memory transistor.

24. The method of claim 20 wherein the second oxide layer includes silicon oxide.

25. The method of claim 20 wherein the applying a substance including fluorine to the second oxide layer includes flowing a precursor containing fluorine over the second oxide layer.