TIMOTHY JAMES ANDERSON

Person

AMHERST, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Tungsten nitrido precursors for the CVD of tungsten nitride, carbon...
- Patent number 9,540,284
- Issue date Jan 10, 2017
- University of Florida Research Foundation, Inc.
- Lisa McElwee-White
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Group III-nitrides on Si substrates using a nanostructured interlayer
- Patent number 8,946,674
- Issue date Feb 3, 2015
- University of Florida Research Foundation, Inc.
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitrides on SI substrates using a nanostructured interlayer
- Patent number 8,268,646
- Issue date Sep 18, 2012
- University of Florida Research Foundation, Inc.
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crack free multilayered devices, methods of manufacture thereof and...
- Patent number 8,222,057
- Issue date Jul 17, 2012
- University of Florida Research Foundation, Inc.
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN growth on Si using ZnO buffer layer
- Patent number 7,001,791
- Issue date Feb 21, 2006
- University of Florida
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride on Si using epitaxial BP buffer layer
- Patent number 6,967,355
- Issue date Nov 22, 2005
- University of Florida Research Foundation, Inc.
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-nitride growth on Si substrate using oxynitride interlayer
- Patent number 6,906,351
- Issue date Jun 14, 2005
- University of Florida Research Foundation, Inc.
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for producing group-III nitrides
- Patent number 6,733,591
- Issue date May 11, 2004
- University of Florida Research Foundation, Inc.
- Tim Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOCVD of WNx thin films using imido precursors
- Patent number 6,596,888
- Issue date Jul 22, 2003
- University of Florida
- Lisa McElwee-White
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for producing group-III nitrides
- Patent number 6,218,280
- Issue date Apr 17, 2001
- University of Florida
- Olga Kryliouk
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
GRADED TRANSPARENT CONDUCTING OXIDE (G-TCO) FOR THIN FILM SOLAR CELLS
- Publication number 20150372173
- Publication date Dec 24, 2015
- University of Florida Research Foundation, Inc.
- ALBERT B. HICKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNGSTEN NITRIDO PRECURSORS FOR THE CVD OF TUNGSTEN NITRIDE, CARBON...
- Publication number 20150105234
- Publication date Apr 16, 2015
- University of Florida Research Foundation, Inc.
- LISA MCELWEE-WHITE
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Application
NANOCRYSTALLINE COPPER INDIUM DISELENIDE (CIS) AND INK-BASED ALLOYS...
- Publication number 20130118585
- Publication date May 16, 2013
- University of Florida Research Foundation, Inc.
- Timothy James Anderson
- B82 - NANO-TECHNOLOGY
Information Patent Application
CRACK FREE MULTILAYERED DEVICES, METHODS OF MANUFACTURE THEREOF AND...
- Publication number 20110042683
- Publication date Feb 24, 2011
- University of Florida Research Foundation, Inc.
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHEMICAL VAPOR DEPOSITION OF CuInxGa1-x(SeyS1-y)2 THIN FILMS AND US...
- Publication number 20100236630
- Publication date Sep 23, 2010
- UNIVERSITY OF FLORIDA RESEARCH FOUNDATION INC.
- W.K. KIM
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GROUP III-NITRIDES ON SI SUBSTRATES USING A NANOSTRUCTURED INTERLAYER
- Publication number 20100029064
- Publication date Feb 4, 2010
- University of Florida Research Foundation, Inc.
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-nitrides on Si substrates using a nanostructured interlayer
- Publication number 20070108466
- Publication date May 17, 2007
- University of Florida Research Foundation, Inc.
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-nitride on Si using epitaxial BP buffer layer
- Publication number 20050087746
- Publication date Apr 28, 2005
- Olga Kryliouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-nitride growth on Si substrate using oxynitride interlayer
- Publication number 20050032345
- Publication date Feb 10, 2005
- University of Florida
- Olga Kryliouk
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN growth on Si using ZnO buffer layer
- Publication number 20040201030
- Publication date Oct 14, 2004
- Olga Kryliouk
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and apparatus for producing group-III nitrides
- Publication number 20030024475
- Publication date Feb 6, 2003
- Tim Anderson
- C30 - CRYSTAL GROWTH
Information Patent Application
MOCVD of WNx thin films using imido precursors
- Publication number 20020045343
- Publication date Apr 18, 2002
- Lisa McElwee-White
- H01 - BASIC ELECTRIC ELEMENTS

TIMOTHY JAMES ANDERSON

Person

Patents Grantslast 30 patents

Tungsten nitrido precursors for the CVD of tungsten nitride, carbon...

Group III-nitrides on Si substrates using a nanostructured interlayer

Group III-nitrides on SI substrates using a nanostructured interlayer

Crack free multilayered devices, methods of manufacture thereof and...

GaN growth on Si using ZnO buffer layer

Group III-nitride on Si using epitaxial BP buffer layer

Group III-nitride growth on Si substrate using oxynitride interlayer

Method and apparatus for producing group-III nitrides

MOCVD of WNx thin films using imido precursors

Method and apparatus for producing group-III nitrides

Patents Applicationslast 30 patents

GRADED TRANSPARENT CONDUCTING OXIDE (G-TCO) FOR THIN FILM SOLAR CELLS

TUNGSTEN NITRIDO PRECURSORS FOR THE CVD OF TUNGSTEN NITRIDE, CARBON...

NANOCRYSTALLINE COPPER INDIUM DISELENIDE (CIS) AND INK-BASED ALLOYS...

CRACK FREE MULTILAYERED DEVICES, METHODS OF MANUFACTURE THEREOF AND...

CHEMICAL VAPOR DEPOSITION OF CuInxGa1-x(SeyS1-y)2 THIN FILMS AND US...

GROUP III-NITRIDES ON SI SUBSTRATES USING A NANOSTRUCTURED INTERLAYER

Group III-nitrides on Si substrates using a nanostructured interlayer

Group III-nitride on Si using epitaxial BP buffer layer

Group III-nitride growth on Si substrate using oxynitride interlayer

GaN growth on Si using ZnO buffer layer

Method and apparatus for producing group-III nitrides

MOCVD of WNx thin films using imido precursors