Timothy JEN

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Source or drain structures with high phosphorous dopant concentration
- Patent number 11,955,482
- Issue date Apr 9, 2024
- Intel Corporation
- Robert Ehlert
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ASYMMETRIC SOURCE AND DRAIN CONTACTS FOR A THIN FILM TRANSISTOR (TF...
- Publication number 20230369503
- Publication date Nov 16, 2023
- Intel Corporation
- Cheng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED SOURCE AND DRAIN CONTACTS FOR A THIN FILM TRANSISTOR...
- Publication number 20230369426
- Publication date Nov 16, 2023
- Intel Corporation
- Abhishek Anil Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC SIDEWALL FEATURES FOR TUNING THIN FILM TRANSISTOR (TFT)...
- Publication number 20230369501
- Publication date Nov 16, 2023
- Intel Corporation
- Cheng Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY RECESSED GATE ELECTRODE IN THIN FILM TRANSISTORS
- Publication number 20230369506
- Publication date Nov 16, 2023
- Intel Corporation
- Abhishek Anil Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED OR GRADED SEMICONDUCTOR REGION IN THIN FILM TRANSISTO...
- Publication number 20230369508
- Publication date Nov 16, 2023
- Intel Corporation
- Timothy Jen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-DOPING OF THIN FILM TRANSISTORS
- Publication number 20230369340
- Publication date Nov 16, 2023
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TIER MEMORY STRUCTURE WITH GRADED CHARACTERISTICS
- Publication number 20230371233
- Publication date Nov 16, 2023
- Intel Corporation
- Abhishek Anil Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYERED OR GRADED GATE DIELECTRIC IN THIN FILM TRANSISTOR (TF...
- Publication number 20230369444
- Publication date Nov 16, 2023
- Intel Corporation
- Abhishek Anil Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPING CONTACTS OF THIN FILM TRANSISTORS
- Publication number 20230369509
- Publication date Nov 16, 2023
- Intel Corporation
- Jisoo Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPLANTATION THROUGH AN ETCH STOP LAYER
- Publication number 20230307291
- Publication date Sep 28, 2023
- Intel Corporation
- Moshe Dolejsi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW DEFECT, HIGH MOBILITY THIN FILM TRANSISTORS WITH IN-SITU DOPED...
- Publication number 20220359759
- Publication date Nov 10, 2022
- Intel Corporation
- Chieh-Jen Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH HIGH PHOSPHOROUS DOPANT CONCENTRATION
- Publication number 20210358908
- Publication date Nov 18, 2021
- Intel Corporation
- Robert EHLERT
- H01 - BASIC ELECTRIC ELEMENTS

Timothy JEN

Person

Patents Grantslast 30 patents

Source or drain structures with high phosphorous dopant concentration

Patents Applicationslast 30 patents

ASYMMETRIC SOURCE AND DRAIN CONTACTS FOR A THIN FILM TRANSISTOR (TF...

MULTI-LAYERED SOURCE AND DRAIN CONTACTS FOR A THIN FILM TRANSISTOR...

DIELECTRIC SIDEWALL FEATURES FOR TUNING THIN FILM TRANSISTOR (TFT)...

LATERALLY RECESSED GATE ELECTRODE IN THIN FILM TRANSISTORS

MULTI-LAYERED OR GRADED SEMICONDUCTOR REGION IN THIN FILM TRANSISTO...

CO-DOPING OF THIN FILM TRANSISTORS

MULTI-TIER MEMORY STRUCTURE WITH GRADED CHARACTERISTICS

MULTI-LAYERED OR GRADED GATE DIELECTRIC IN THIN FILM TRANSISTOR (TF...

DOPING CONTACTS OF THIN FILM TRANSISTORS

IMPLANTATION THROUGH AN ETCH STOP LAYER

LOW DEFECT, HIGH MOBILITY THIN FILM TRANSISTORS WITH IN-SITU DOPED...

SOURCE OR DRAIN STRUCTURES WITH HIGH PHOSPHOROUS DOPANT CONCENTRATION