Ting CHANG

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nanoribbon thick gate devices with differential ribbon spacing and...
- Patent number 12,249,622
- Issue date Mar 11, 2025
- Intel Corporation
- Tanuj Trivedi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Self-aligned front-end charge trap flash memory cell and capacitor...
- Patent number 12,089,411
- Issue date Sep 10, 2024
- Intel Corporation
- Tanuj Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage extended-drain MOS (EDMOS) nanowire transistors
- Patent number 12,040,395
- Issue date Jul 16, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ESD diode solution for nanoribbon architectures
- Patent number 11,996,403
- Issue date May 28, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having dual nanoribbo...
- Patent number 11,862,703
- Issue date Jan 2, 2024
- Intel Corporation
- Tanuj Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single gated 3D nanowire inverter for high density thick gate SOC a...
- Patent number 11,791,380
- Issue date Oct 17, 2023
- Intel Corporation
- Rahul Ramaswamy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gate-all-around integrated circuit structures having depopulated ch...
- Patent number 11,581,404
- Issue date Feb 14, 2023
- Intel Corporation
- Tanuj Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having dual nanoribbo...
- Patent number 11,437,483
- Issue date Sep 6, 2022
- Intel Corporation
- Tanuj Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having depopulated ch...
- Patent number 11,094,782
- Issue date Aug 17, 2021
- Intel Corporation
- Tanuj Trivedi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antifuse element using spacer breakdown
- Patent number 10,847,456
- Issue date Nov 24, 2020
- Intel Corporation
- Ting Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS antifuse with void-accelerated breakdown
- Patent number 10,763,209
- Issue date Sep 1, 2020
- Intel Corporation
- Roman Olac-Vaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of high voltage transistors and low voltage...
- Patent number 10,312,367
- Issue date Jun 4, 2019
- Intel Corporation
- Kinyip Phoa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor gate metal with laterally graduated work function
- Patent number 10,192,969
- Issue date Jan 29, 2019
- Intel Corporation
- Chia-Hong Jan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-linear fin-based devices
- Patent number 10,164,115
- Issue date Dec 25, 2018
- Intel Corporation
- Neville L. Dias
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Antifuse element using spacer breakdown
- Patent number 9,929,090
- Issue date Mar 27, 2018
- Intel Corporation
- Ting Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell having isolated charge sites and method of fabricating...
- Patent number 9,799,668
- Issue date Oct 24, 2017
- Intel Corporation
- Ting Chang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...
- Publication number 20240088253
- Publication date Mar 14, 2024
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE GATED 3D NANOWIRE INVERTER FOR HIGH DENSITY THICK GATE SOC A...
- Publication number 20230420501
- Publication date Dec 28, 2023
- Intel Corporation
- Rahul RAMASWAMY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...
- Publication number 20220359697
- Publication date Nov 10, 2022
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED FRONT-END CHARGE TRAP FLASH MEMORY CELL AND CAPACITOR...
- Publication number 20210399002
- Publication date Dec 23, 2021
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...
- Publication number 20210280683
- Publication date Sep 9, 2021
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...
- Publication number 20210257453
- Publication date Aug 19, 2021
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...
- Publication number 20210257452
- Publication date Aug 19, 2021
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN BASED PERFORMANCE ENHANCEMENT USING SELECTIVE METAL OXIDATIO...
- Publication number 20210193844
- Publication date Jun 24, 2021
- Intel Corporation
- Rahul RAMASWAMY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ESD DIODE SOLUTION FOR NANORIBBON ARCHITECTURES
- Publication number 20210183850
- Publication date Jun 17, 2021
- Intel Corporation
- Nidhi NIDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE GATED 3D NANOWIRE INVERTER FOR HIGH DENSITY THICK GATE SOC A...
- Publication number 20210184000
- Publication date Jun 17, 2021
- Intel Corporation
- Rahul RAMASWAMY
- B82 - NANO-TECHNOLOGY
Information Patent Application
NANORIBBON THICK GATE DEVICES WITH DIFFERENTIAL RIBBON SPACING AND...
- Publication number 20210184001
- Publication date Jun 17, 2021
- Intel Corporation
- Tanuj TRIVEDI
- B82 - NANO-TECHNOLOGY
Information Patent Application
HIGH VOLTAGE EXTENDED-DRAIN MOS (EDMOS) NANOWIRE TRANSISTORS
- Publication number 20210184032
- Publication date Jun 17, 2021
- Intel Corporation
- Nidhi NIDHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE ULTRA-LOW POWER THICK GATE NANORIBBON TRANSISTORS FOR...
- Publication number 20210184045
- Publication date Jun 17, 2021
- Intel Corporation
- Rahul RAMASWAMY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATED HIGH PERFORMANCE NANORIBBON TRANSISTORS WITH HIGH VOL...
- Publication number 20210184051
- Publication date Jun 17, 2021
- Intel Corporation
- Tanuj TRIVEDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANORIBBON THICK GATE DEVICE WITH HYBRID DIELECTRIC TUNING FOR HIGH...
- Publication number 20210183857
- Publication date Jun 17, 2021
- Intel Corporation
- Walid M. HAFEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-LINEAR FIN-BASED DEVICES
- Publication number 20190097057
- Publication date Mar 28, 2019
- Intel Corporation
- NEVILLE L. DIAS
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
ANTIFUSE ELEMENT USING SPACER BREAKDOWN
- Publication number 20180218977
- Publication date Aug 2, 2018
- Intel Corporation
- TING CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE METAL WITH LATERALLY GRADUATED WORK FUNCTION
- Publication number 20170207312
- Publication date Jul 20, 2017
- Intel Corporation
- Chia-Hong JAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS ANTIFUSE WITH VOID-ACCELERATED BREAKDOWN
- Publication number 20170162503
- Publication date Jun 8, 2017
- Intel Corporation
- Roman OLAC-VAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-LINEAR FIN-BASED DEVICES
- Publication number 20170098709
- Publication date Apr 6, 2017
- Intel Corporation
- NEVILLE L. DIAS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MONOLITHIC INTEGRATION OF HIGH VOLTAGE TRANSISTORS & LOW VOLTAGE NO...
- Publication number 20170025533
- Publication date Jan 26, 2017
- Kinyip Phoa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTIFUSE ELEMENT USING SPACER BREAKDOWN
- Publication number 20160351498
- Publication date Dec 1, 2016
- Intel Corporation
- TING CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CELL HAVING ISOLATED CHARGE SITES AND METHOD OF FABRICATING...
- Publication number 20160049418
- Publication date Feb 18, 2016
- Intel Corporation
- TING CHANG
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Nanoribbon thick gate devices with differential ribbon spacing and...

Self-aligned front-end charge trap flash memory cell and capacitor...

High voltage extended-drain MOS (EDMOS) nanowire transistors

ESD diode solution for nanoribbon architectures

Gate-all-around integrated circuit structures having dual nanoribbo...

Single gated 3D nanowire inverter for high density thick gate SOC a...

Gate-all-around integrated circuit structures having depopulated ch...

Gate-all-around integrated circuit structures having dual nanoribbo...

Gate-all-around integrated circuit structures having depopulated ch...

Antifuse element using spacer breakdown

MOS antifuse with void-accelerated breakdown

Monolithic integration of high voltage transistors and low voltage...

Transistor gate metal with laterally graduated work function

Non-linear fin-based devices

Antifuse element using spacer breakdown

Memory cell having isolated charge sites and method of fabricating...

Patents Applicationslast 30 patents

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...

SINGLE GATED 3D NANOWIRE INVERTER FOR HIGH DENSITY THICK GATE SOC A...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...

SELF-ALIGNED FRONT-END CHARGE TRAP FLASH MEMORY CELL AND CAPACITOR...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DUAL NANORIBBO...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...

STRAIN BASED PERFORMANCE ENHANCEMENT USING SELECTIVE METAL OXIDATIO...

ESD DIODE SOLUTION FOR NANORIBBON ARCHITECTURES

SINGLE GATED 3D NANOWIRE INVERTER FOR HIGH DENSITY THICK GATE SOC A...

NANORIBBON THICK GATE DEVICES WITH DIFFERENTIAL RIBBON SPACING AND...

HIGH VOLTAGE EXTENDED-DRAIN MOS (EDMOS) NANOWIRE TRANSISTORS

HIGH VOLTAGE ULTRA-LOW POWER THICK GATE NANORIBBON TRANSISTORS FOR...

CO-INTEGRATED HIGH PERFORMANCE NANORIBBON TRANSISTORS WITH HIGH VOL...

NANORIBBON THICK GATE DEVICE WITH HYBRID DIELECTRIC TUNING FOR HIGH...

NON-LINEAR FIN-BASED DEVICES

ANTIFUSE ELEMENT USING SPACER BREAKDOWN

TRANSISTOR GATE METAL WITH LATERALLY GRADUATED WORK FUNCTION

MOS ANTIFUSE WITH VOID-ACCELERATED BREAKDOWN

NON-LINEAR FIN-BASED DEVICES

MONOLITHIC INTEGRATION OF HIGH VOLTAGE TRANSISTORS & LOW VOLTAGE NO...

ANTIFUSE ELEMENT USING SPACER BREAKDOWN

MEMORY CELL HAVING ISOLATED CHARGE SITES AND METHOD OF FABRICATING...