Titash Rakshit

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 12,142,634
- Issue date Nov 12, 2024
- Sony Group Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 10,991,799
- Issue date Apr 27, 2021
- Sony Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 10,636,871
- Issue date Apr 28, 2020
- Intel Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum well MOSFET channels having lattice mismatch with metal sou...
- Patent number 10,084,058
- Issue date Sep 25, 2018
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress in trigate devices using complimentary gate fill materials
- Patent number 9,806,193
- Issue date Oct 31, 2017
- Intel Corporation
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 9,595,581
- Issue date Mar 14, 2017
- Intel Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stress in trigate devices using complimentary gate fill materials
- Patent number 9,450,092
- Issue date Sep 20, 2016
- Intel Corporation
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum well MOSFET channels having lattice mismatch with metal sou...
- Patent number 9,443,936
- Issue date Sep 13, 2016
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress in trigate devices using complimentary gate fill materials
- Patent number 9,224,754
- Issue date Dec 29, 2015
- Intel Corporation
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 9,129,829
- Issue date Sep 8, 2015
- Intel Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Multi-gate device
- Patent number 9,035,387
- Issue date May 19, 2015
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junctionless accumulation-mode devices on decoupled prominent archi...
- Patent number 8,853,741
- Issue date Oct 7, 2014
- Intel Corporation
- Annalisa Cappellani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 8,753,942
- Issue date Jun 17, 2014
- Intel Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stress in trigate devices using complimentary gate fill materials
- Patent number 8,741,733
- Issue date Jun 3, 2014
- Intel Corporation
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for improving multi-gate device performance
- Patent number 8,618,609
- Issue date Dec 31, 2013
- Intel Corporation
- Brian Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junctionless accumulation-mode devices on prominent architectures,...
- Patent number 8,507,948
- Issue date Aug 13, 2013
- Intel Corporation
- Annalisa Cappellani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming quantum well mosfet channels having uni-axial str...
- Patent number 8,501,508
- Issue date Aug 6, 2013
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low power floating body memory cell based on low-bandgap-material q...
- Patent number 8,378,334
- Issue date Feb 19, 2013
- Intel Corporation
- Titash Rakshit
- G11 - INFORMATION STORAGE
Information Patent Grant
Stress in trigate devices using complimentary gate fill materials
- Patent number 8,362,566
- Issue date Jan 29, 2013
- Intel Corporation
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate III-V quantum well structures
- Patent number 8,344,425
- Issue date Jan 1, 2013
- Intel Corporation
- Marko Radosavljevic
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor heterostructures to reduce short channel effects
- Patent number 8,278,687
- Issue date Oct 2, 2012
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum well MOSFET channels having uni-axial strain caused by meta...
- Patent number 8,258,498
- Issue date Sep 4, 2012
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double quantum well structures for transistors
- Patent number 8,129,749
- Issue date Mar 6, 2012
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trigate transistor having extended metal gate electrode
- Patent number 8,120,073
- Issue date Feb 21, 2012
- Intel Corporation
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Modulation-doped halo in quantum well field-effect transistors, app...
- Patent number 8,115,235
- Issue date Feb 14, 2012
- Intel Corporation
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Increasing body dopant uniformity in multi-gate transistor devices
- Patent number 8,022,487
- Issue date Sep 20, 2011
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compositionally-graded quantum-well channels for semiconductor devices
- Patent number 8,017,933
- Issue date Sep 13, 2011
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low power floating body memory cell based on low bandgap material q...
- Patent number 7,964,866
- Issue date Jun 21, 2011
- Intel Corporation
- Titash Rakshit
- G11 - INFORMATION STORAGE
Information Patent Grant
Quantum well MOSFET channels having uni-axial strain caused by meta...
- Patent number 7,947,971
- Issue date May 24, 2011
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement spacers for MOSFET fringe capacitance reduction and pro...
- Patent number 7,838,373
- Issue date Nov 23, 2010
- Intel Corporation
- Martin Giles
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES
- Publication number 20210226006
- Publication date Jul 22, 2021
- Sony Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Application
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES
- Publication number 20200227520
- Publication date Jul 16, 2020
- Intel Corporation
- Kelin J. KUHN
- B82 - NANO-TECHNOLOGY
Information Patent Application
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES
- Publication number 20170133462
- Publication date May 11, 2017
- Intel Corporation
- Kelin J. KUHN
- B82 - NANO-TECHNOLOGY
Information Patent Application
QUANTUM WELL MOSFET CHANNELS HAVING LATTICE MISMATCH WITH METAL SOU...
- Publication number 20160372574
- Publication date Dec 22, 2016
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS
- Publication number 20160372597
- Publication date Dec 22, 2016
- Intel Corporation
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS
- Publication number 20160064562
- Publication date Mar 3, 2016
- Intel Corporation
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES
- Publication number 20150303258
- Publication date Oct 22, 2015
- Intel Corporation
- Kelin J. KUHN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTIONLESS ACCUMULATION-MODE DEVICE ISOLATED FROM SEMICONDUCTIVE...
- Publication number 20150021553
- Publication date Jan 22, 2015
- Intel Corporation
- ANNALISA CAPPELLANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES
- Publication number 20140326952
- Publication date Nov 6, 2014
- Kelin J. KUHN
- B82 - NANO-TECHNOLOGY
Information Patent Application
STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS
- Publication number 20140239400
- Publication date Aug 28, 2014
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHODS FOR IMPROVING MULTI-GATE DEVICE PERFORMANCE
- Publication number 20140097495
- Publication date Apr 10, 2014
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTIONLESS ACCUMULATION-MODE DEVICES ON DECOUPLED PROMINENT ARCHI...
- Publication number 20130334572
- Publication date Dec 19, 2013
- Annalisa Cappellani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM WELL MOSFET CHANNELS HAVING LATTICE MISMATCH WITH METAL SOU...
- Publication number 20130234113
- Publication date Sep 12, 2013
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS
- Publication number 20130143385
- Publication date Jun 6, 2013
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY META...
- Publication number 20120231596
- Publication date Sep 13, 2012
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTIONLESS ACCUMULATION-MODE DEVICES ON PROMINENT ARCHITECTURES,...
- Publication number 20120161202
- Publication date Jun 28, 2012
- Annalisa Cappellani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES
- Publication number 20120138886
- Publication date Jun 7, 2012
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Application
INCREASING BODY DOPANT UNIFORMITY IN MULTI-GATE TRANSISTOR DEVICES
- Publication number 20110291192
- Publication date Dec 1, 2011
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW POWER FLOATING BODY MEMORY CELL BASED ON LOW-BANDGAP-MATERIAL Q...
- Publication number 20110211402
- Publication date Sep 1, 2011
- Titash Rakshit
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-gate III-V quantum well structures
- Publication number 20110156004
- Publication date Jun 30, 2011
- Marko Radosavljevic
- B82 - NANO-TECHNOLOGY
Information Patent Application
QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY META...
- Publication number 20110121266
- Publication date May 26, 2011
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHODS FOR IMPROVING MULTI-GATE DEVICE PERFORMANCE
- Publication number 20110018063
- Publication date Jan 27, 2011
- Brian Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Modulation-doped halos in quantum well field-effect transistors, ap...
- Publication number 20100213441
- Publication date Aug 26, 2010
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Application
QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY META...
- Publication number 20100193771
- Publication date Aug 5, 2010
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY META...
- Publication number 20100163847
- Publication date Jul 1, 2010
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trigate transistor having extended metal gate electrode
- Publication number 20100163970
- Publication date Jul 1, 2010
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Replacement spacers for mosfet fringe capacatance reduction and pro...
- Publication number 20100025775
- Publication date Feb 4, 2010
- Martin Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITIONALLY-GRADED QUANTUM-WELL CHANNELS FOR SEMICONDUCTOR DEVICES
- Publication number 20090321717
- Publication date Dec 31, 2009
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS
- Publication number 20090315114
- Publication date Dec 24, 2009
- Intel Corporation
- Titash Rakshit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW POWER FLOATING BODY MEMORY CELL BASED ON LOW BANDGAP MATERIAL Q...
- Publication number 20090279355
- Publication date Nov 12, 2009
- Intel Corporation
- Titash Rakshit
- G11 - INFORMATION STORAGE

Titash Rakshit

Person

Patents Grantslast 30 patents

Silicon and silicon germanium nanowire structures

Silicon and silicon germanium nanowire structures

Silicon and silicon germanium nanowire structures

Quantum well MOSFET channels having lattice mismatch with metal sou...

Stress in trigate devices using complimentary gate fill materials

Silicon and silicon germanium nanowire structures

Stress in trigate devices using complimentary gate fill materials

Quantum well MOSFET channels having lattice mismatch with metal sou...

Stress in trigate devices using complimentary gate fill materials

Silicon and silicon germanium nanowire structures

Multi-gate device

Junctionless accumulation-mode devices on decoupled prominent archi...

Silicon and silicon germanium nanowire structures

Stress in trigate devices using complimentary gate fill materials

Apparatus for improving multi-gate device performance

Junctionless accumulation-mode devices on prominent architectures,...

Method of forming quantum well mosfet channels having uni-axial str...

Low power floating body memory cell based on low-bandgap-material q...

Stress in trigate devices using complimentary gate fill materials

Multi-gate III-V quantum well structures

Semiconductor heterostructures to reduce short channel effects

Quantum well MOSFET channels having uni-axial strain caused by meta...

Double quantum well structures for transistors

Trigate transistor having extended metal gate electrode

Modulation-doped halo in quantum well field-effect transistors, app...

Increasing body dopant uniformity in multi-gate transistor devices

Compositionally-graded quantum-well channels for semiconductor devices

Low power floating body memory cell based on low bandgap material q...

Quantum well MOSFET channels having uni-axial strain caused by meta...

Replacement spacers for MOSFET fringe capacitance reduction and pro...

Patents Applicationslast 30 patents

SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES

SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES

SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES

QUANTUM WELL MOSFET CHANNELS HAVING LATTICE MISMATCH WITH METAL SOU...

STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS

STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS

SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES

JUNCTIONLESS ACCUMULATION-MODE DEVICE ISOLATED FROM SEMICONDUCTIVE...

SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES

STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS

APPARATUS AND METHODS FOR IMPROVING MULTI-GATE DEVICE PERFORMANCE

JUNCTIONLESS ACCUMULATION-MODE DEVICES ON DECOUPLED PROMINENT ARCHI...

QUANTUM WELL MOSFET CHANNELS HAVING LATTICE MISMATCH WITH METAL SOU...

STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS

QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY META...

JUNCTIONLESS ACCUMULATION-MODE DEVICES ON PROMINENT ARCHITECTURES,...

SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES

INCREASING BODY DOPANT UNIFORMITY IN MULTI-GATE TRANSISTOR DEVICES

LOW POWER FLOATING BODY MEMORY CELL BASED ON LOW-BANDGAP-MATERIAL Q...

Multi-gate III-V quantum well structures

QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY META...

APPARATUS AND METHODS FOR IMPROVING MULTI-GATE DEVICE PERFORMANCE

Modulation-doped halos in quantum well field-effect transistors, ap...

QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY META...

QUANTUM WELL MOSFET CHANNELS HAVING UNI-AXIAL STRAIN CAUSED BY META...

Trigate transistor having extended metal gate electrode

Replacement spacers for mosfet fringe capacatance reduction and pro...

COMPOSITIONALLY-GRADED QUANTUM-WELL CHANNELS FOR SEMICONDUCTOR DEVICES

STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS

LOW POWER FLOATING BODY MEMORY CELL BASED ON LOW BANDGAP MATERIAL Q...