Tomas A. Palacios

Person

Belmont, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Optically controlled semiconductor devices
- Patent number 12,176,454
- Issue date Dec 24, 2024
- Massachusetts Institute of Technology
- Tomas Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with linear capacitance
- Patent number 12,113,061
- Issue date Oct 8, 2024
- Massachusetts Institute of Technology
- Tomas Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultrasensitive thermo-mechanical bolometer
- Patent number 10,914,637
- Issue date Feb 9, 2021
- Massachusetts Institute of Technology
- Yuxuan Lin
- G01 - MEASURING TESTING
Information Patent Grant
Sensor systems and related fabrication techniques
- Patent number 10,871,466
- Issue date Dec 22, 2020
- Massachusetts Institute of Technology
- Charles E. Mackin
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Transistor structure having buried island regions
- Patent number 10,566,192
- Issue date Feb 18, 2020
- CAMBRIDGE ELECTRONICS, INC.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-linearity transistors
- Patent number 10,439,059
- Issue date Oct 8, 2019
- Massachusetts Institute of Technology
- Tomas Apostol Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric structures for nitride semiconductor devices
- Patent number 10,297,456
- Issue date May 21, 2019
- Massachusetts Institute of Technology
- Bernard A. Alamariu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures for nitride vertical transistors
- Patent number 10,256,352
- Issue date Apr 9, 2019
- Massachusetts Institute of Technology
- Min Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of current collapse in thin patterned GaN
- Patent number 10,217,641
- Issue date Feb 26, 2019
- International Business Machines Corporation
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing leakage current in semiconductor devices
- Patent number 9,911,813
- Issue date Mar 6, 2018
- Massachusetts Institute of Technology
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Universal methodology to synthesize diverse two-dimensional heteros...
- Patent number 9,812,525
- Issue date Nov 7, 2017
- Massachusetts Institute of Technology
- Mildred S. Dresselhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Improving linearity in semiconductor devices
- Patent number 9,711,594
- Issue date Jul 18, 2017
- Massachusetts Institute of Technology
- Dong Seup Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Enhancement-mode transistors with increased threshold voltage
- Patent number 9,704,959
- Issue date Jul 11, 2017
- Massachusetts Institute of Technology
- Yuhao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation technique for wide bandgap semiconductor devices
- Patent number 9,634,111
- Issue date Apr 25, 2017
- Massachusetts Institute of Technology
- Feng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and recess formation etch technique
- Patent number 9,570,600
- Issue date Feb 14, 2017
- Massachusetts Institute of Technology
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electric field management for a group III-nitride semiconductor device
- Patent number 9,455,342
- Issue date Sep 27, 2016
- CAMBRIDGE ELECTRONICS, INC.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum nitride based semiconductor devices
- Patent number 9,337,301
- Issue date May 10, 2016
- Massachusetts Institute of Technology
- Tomas Apostol Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode having trenches in a semiconductor region
- Patent number 9,293,538
- Issue date Mar 22, 2016
- Massachusetts Institute of Technology
- Tomas Apostol Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a recessed electrode structure
- Patent number 9,041,003
- Issue date May 26, 2015
- Massachusetts Institute of Technology
- Tomas Apostol Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-performance nitride semiconductor devices
- Patent number 8,921,892
- Issue date Dec 30, 2014
- Massachusetts Institute of Technology
- Tomas Apostol Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement-mode nitride transistor
- Patent number 8,759,876
- Issue date Jun 24, 2014
- Massachusetts Institute of Technology
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication technique for gallium nitride substrates
- Patent number 8,703,623
- Issue date Apr 22, 2014
- Massachusetts Institute of Technology
- Jinwook Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-gate normally-off nitride transistors
- Patent number 8,587,031
- Issue date Nov 19, 2013
- Massachusetts Institute of Technology
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices based on SI/nitride structures
- Patent number 8,188,459
- Issue date May 29, 2012
- Massachusetts Institute of Technology
- Tomas Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to shape the electric field in electron devices, passivate...
- Patent number 8,114,717
- Issue date Feb 14, 2012
- The Regents of the University of California
- Tomas Palacios
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
OPTICALLY CONTROLLED SEMICONDUCTOR DEVICES
- Publication number 20240405147
- Publication date Dec 5, 2024
- Massachusetts Institute of Technology
- Tomas Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Electric Field Management Structures
- Publication number 20240162105
- Publication date May 16, 2024
- Massachusetts Institute of Technology
- Tomas Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD TO REDUCE A MOBILE DEVICE USER'S RADIATION EXPOSU...
- Publication number 20230155621
- Publication date May 18, 2023
- CONTECH RF DEVICES, LLC
- Ronald KOEPPEL
- G08 - SIGNALLING
Information Patent Application
SEMICONDUCTOR DEVICE WITH LINEAR PARASITIC CAPACITANCE
- Publication number 20210343703
- Publication date Nov 4, 2021
- Massachusetts Institute of Technology
- Tomas PALACIOS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROL OF CURRENT COLLAPSE IN THIN PATTERNED GAN
- Publication number 20200027745
- Publication date Jan 23, 2020
- International Business Machines Corporation
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ultrasensitive Thermo-Mechanical Bolometer
- Publication number 20190390950
- Publication date Dec 26, 2019
- Massachusetts Institute of Technology
- Yuxuan Lin
- F16 - ENGINEERING ELEMENTS AND UNITS GENERAL MEASURES FOR PRODUCING AND MAINT...
Information Patent Application
SENSOR SYSTEMS AND RELATED FABRICATION TECHNIQUES
- Publication number 20180321184
- Publication date Nov 8, 2018
- Massachusetts Institute of Technology
- Charles E. Mackin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-LINEARITY TRANSISTORS
- Publication number 20180197999
- Publication date Jul 12, 2018
- Massachusetts Institute of Technology
- Tomas Apostol Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN DEVICES FABRICATED VIA WAFER BONDING
- Publication number 20170301772
- Publication date Oct 19, 2017
- Robert M. Radway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC STRUCTURES FOR NITRIDE SEMICONDUCTOR DEVICES
- Publication number 20170301546
- Publication date Oct 19, 2017
- Massachusetts Institute of Technology
- Bernard A. Alamariu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURES FOR NITRIDE VERTICAL TRANSISTORS
- Publication number 20170236951
- Publication date Aug 17, 2017
- Massachusetts Institute of Technology
- Min Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Universal Methodology to Synthesize Diverse Two-Dimensional Heteros...
- Publication number 20170170260
- Publication date Jun 15, 2017
- Massachusetts Institute of Technology
- Mildred S. Dresselhaus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD MANAGEMENT FOR A GROUP III-NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20160365437
- Publication date Dec 15, 2016
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONICS INCLUDING GRAPHENE-BASED HYBRID STRUCTURES
- Publication number 20160284811
- Publication date Sep 29, 2016
- Massachusetts Institute of Technology
- Lili Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROL OF CURRENT COLLAPSE IN THIN PATTERNED GAN
- Publication number 20160225887
- Publication date Aug 4, 2016
- International Business Machines Corporation
- William J. Gallagher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING LEAKAGE CURRENT IN SEMICONDUCTOR DEVICES
- Publication number 20160133710
- Publication date May 12, 2016
- Massachusetts Institute of Technology
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND RECESS FORMATION ETCH TECHNIQUE
- Publication number 20160064539
- Publication date Mar 3, 2016
- Massachusetts Institute of Technology
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPROVING LINEARITY IN SEMICONDUCTOR DEVICES
- Publication number 20150372081
- Publication date Dec 24, 2015
- Massachusetts Institute of Technology
- Dong Seup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE HAVING BURIED ISLAND REGIONS
- Publication number 20150349124
- Publication date Dec 3, 2015
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NUCLEATION AND BUFFER LAYERS FOR GROUP III-NITRIDE BASED SEMICONDUC...
- Publication number 20150349064
- Publication date Dec 3, 2015
- Mohamed Azize
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING LEAKAGE CURRENT IN SEMICONDUCTOR DEVICES
- Publication number 20150318360
- Publication date Nov 5, 2015
- Massachusetts Institute of Technology
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20150270356
- Publication date Sep 24, 2015
- Massachusetts Institute of Technology
- Tomas Apostol Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRIC FIELD MANAGEMENT FOR A GROUP III-NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20150144957
- Publication date May 28, 2015
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION TECHNIQUE FOR WIDE BANDGAP SEMICONDUCTOR DEVICES
- Publication number 20150091061
- Publication date Apr 2, 2015
- Massachusetts Institute of Technology
- Feng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALUMINUM NITRIDE BASED SEMICONDUCTOR DEVICES
- Publication number 20150028346
- Publication date Jan 29, 2015
- Massachusetts Institute of Technology
- Tomas Apostol Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT-MODE TRANSISTORS WITH INCREASED THRESHOLD VOLTAGE
- Publication number 20140346615
- Publication date Nov 27, 2014
- Massachusetts Institute of Technology
- Yuhao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING A RECESSED ELECTRODE STRUCTURE
- Publication number 20140070228
- Publication date Mar 13, 2014
- Massachusetts Institute of Technology
- Tomas Apostol Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING A RECESSED ELECTRODE STRUCTURE
- Publication number 20130099247
- Publication date Apr 25, 2013
- Massachusetts Institute of Technology
- Tomas Apostol Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-GATE NORMALLY-OFF NITRIDE TRANSISTORS
- Publication number 20130020614
- Publication date Jan 24, 2013
- Massachusetts Institute of Technology
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PERFORMANCE OF NITRIDE SEMICONDUCTOR DEVICES
- Publication number 20120012894
- Publication date Jan 19, 2012
- Massachusetts Institute of Technology
- Tomas Apostol Palacios
- H01 - BASIC ELECTRIC ELEMENTS

Tomas A. Palacios

Person

Patents Grantslast 30 patents

Optically controlled semiconductor devices

Semiconductor device with linear capacitance

Ultrasensitive thermo-mechanical bolometer

Sensor systems and related fabrication techniques

Transistor structure having buried island regions

High-linearity transistors

Dielectric structures for nitride semiconductor devices

Structures for nitride vertical transistors

Control of current collapse in thin patterned GaN

Reducing leakage current in semiconductor devices

Universal methodology to synthesize diverse two-dimensional heteros...

Improving linearity in semiconductor devices

Enhancement-mode transistors with increased threshold voltage

Passivation technique for wide bandgap semiconductor devices

Semiconductor structure and recess formation etch technique

Electric field management for a group III-nitride semiconductor device

Aluminum nitride based semiconductor devices

Diode having trenches in a semiconductor region

Semiconductor devices having a recessed electrode structure

High-performance nitride semiconductor devices

Enhancement-mode nitride transistor

Fabrication technique for gallium nitride substrates

Dual-gate normally-off nitride transistors

Devices based on SI/nitride structures

Methods to shape the electric field in electron devices, passivate...

Patents Applicationslast 30 patents

OPTICALLY CONTROLLED SEMICONDUCTOR DEVICES

Semiconductor Device with Electric Field Management Structures

SYSTEM AND METHOD TO REDUCE A MOBILE DEVICE USER'S RADIATION EXPOSU...

SEMICONDUCTOR DEVICE WITH LINEAR PARASITIC CAPACITANCE

CONTROL OF CURRENT COLLAPSE IN THIN PATTERNED GAN

Ultrasensitive Thermo-Mechanical Bolometer

SENSOR SYSTEMS AND RELATED FABRICATION TECHNIQUES

HIGH-LINEARITY TRANSISTORS

GaN DEVICES FABRICATED VIA WAFER BONDING

DIELECTRIC STRUCTURES FOR NITRIDE SEMICONDUCTOR DEVICES

STRUCTURES FOR NITRIDE VERTICAL TRANSISTORS

Universal Methodology to Synthesize Diverse Two-Dimensional Heteros...

ELECTRIC FIELD MANAGEMENT FOR A GROUP III-NITRIDE SEMICONDUCTOR DEVICE

ELECTRONICS INCLUDING GRAPHENE-BASED HYBRID STRUCTURES

CONTROL OF CURRENT COLLAPSE IN THIN PATTERNED GAN

REDUCING LEAKAGE CURRENT IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR STRUCTURE AND RECESS FORMATION ETCH TECHNIQUE

IMPROVING LINEARITY IN SEMICONDUCTOR DEVICES

TRANSISTOR STRUCTURE HAVING BURIED ISLAND REGIONS

NUCLEATION AND BUFFER LAYERS FOR GROUP III-NITRIDE BASED SEMICONDUC...

REDUCING LEAKAGE CURRENT IN SEMICONDUCTOR DEVICES

VERTICAL NITRIDE SEMICONDUCTOR DEVICE

ELECTRIC FIELD MANAGEMENT FOR A GROUP III-NITRIDE SEMICONDUCTOR DEVICE

PASSIVATION TECHNIQUE FOR WIDE BANDGAP SEMICONDUCTOR DEVICES

ALUMINUM NITRIDE BASED SEMICONDUCTOR DEVICES

ENHANCEMENT-MODE TRANSISTORS WITH INCREASED THRESHOLD VOLTAGE

SEMICONDUCTOR DEVICES HAVING A RECESSED ELECTRODE STRUCTURE

SEMICONDUCTOR DEVICES HAVING A RECESSED ELECTRODE STRUCTURE

DUAL-GATE NORMALLY-OFF NITRIDE TRANSISTORS

PERFORMANCE OF NITRIDE SEMICONDUCTOR DEVICES