Tomoki Uemura

Person

Hyogo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
III-nitride single-crystal ingot, III-nitride single-crystal substr...
- Patent number 8,845,992
- Issue date Sep 30, 2014
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride semiconductor crystal substrate and semiconductor...
- Patent number 8,698,282
- Issue date Apr 15, 2014
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN single-crystal mass and method of its manufacture, and semicond...
- Patent number 8,294,245
- Issue date Oct 23, 2012
- Sumitomo Electric Industries, Ltd.
- Hideaki Nakahata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing gallium nitride crystal and gallium nitrid...
- Patent number 8,147,612
- Issue date Apr 3, 2012
- Sumitomo Electric Industries, Ltd.
- Tomoki Uemura
- C30 - CRYSTAL GROWTH
Information Patent Grant
AlxGayIn1−x−yN crystal substrate, semiconductor device, and method...
- Patent number 7,943,964
- Issue date May 17, 2011
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of surface treating substrates and method of manufacturing I...
- Patent number 7,432,186
- Issue date Oct 7, 2008
- Sumitomo Electric Industries, Ltd.
- Takayuki Nishiura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AlxGayInl−x−yN substrate, cleaning method of AlxGayInl−x−yN substra...
- Patent number 7,387,989
- Issue date Jun 17, 2008
- Sumitomo Electric Industries, Ltd.
- Tomoki Uemura
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for separating chips from diamond wafer
- Patent number 6,805,808
- Issue date Oct 19, 2004
- Sumitomo Electric Industries, Ltd.
- Satoshi Fujii
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Diamond substrate for surface acoustic wave device, and surface aco...
- Patent number 6,661,152
- Issue date Dec 9, 2003
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Hard carbon film and surface-acoustic-wave substrate
- Patent number 6,448,688
- Issue date Sep 10, 2002
- Sumitomo Electric Industries, Ltd.
- Satoshi Fujii
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Hard carbon film and surface acoustic-wave substrate
- Patent number 6,416,865
- Issue date Jul 9, 2002
- Sumitomo Electric Industries, Ltd.
- Satoshi Fujii
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Diamond wafer, method of estimating a diamond wafer and diamond sur...
- Patent number 6,356,006
- Issue date Mar 12, 2002
- Sumitomo Electric Industries, Ltd.
- Satoshi Fujii
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Diamond wafer, method of estimating a diamond wafer and diamond sur...
- Patent number 6,320,296
- Issue date Nov 20, 2001
- Sumitomo Electric Industries, Ltd.
- Satoshi Fujii
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Diamond wafer, method of estimating a diamond wafer and diamond sur...
- Patent number 6,210,780
- Issue date Apr 3, 2001
- Sumitomo Electric Industries, Ltd.
- Satoshi Fujii
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Diamond-ZnO surface acoustic wave device
- Patent number 5,959,389
- Issue date Sep 28, 1999
- Sumitomo Electronic Industries, Ltd.
- Hideaki Nakahata
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRID...
- Publication number 20120164058
- Publication date Jun 28, 2012
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Tomoki UEMURA
- C30 - CRYSTAL GROWTH
Information Patent Application
GaxIn1-xN Substrate and GaxIn1-xN Substrate Cleaning Method
- Publication number 20110132410
- Publication date Jun 9, 2011
- Sumitomo Electric Industries, Ltd.
- Tomoki Uemura
- B08 - CLEANING
Information Patent Application
III-Nitride Single-Crystal Ingot, III-Nitride Single-Crystal Substr...
- Publication number 20100322841
- Publication date Dec 23, 2010
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN Single-Crystal Mass and Method of Its Manufacture, and Semicond...
- Publication number 20100314625
- Publication date Dec 16, 2010
- Sumitomo Electric Industries, Ltd.
- Hideaki NAKAHATA
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III Nitride Semiconductor Crystal Substrate and Semiconductor...
- Publication number 20100164070
- Publication date Jul 1, 2010
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Takuji Okahisa
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRID...
- Publication number 20090194848
- Publication date Aug 6, 2009
- Sumitomo Electric Industries, Ltd.
- Tomoki Uemura
- C30 - CRYSTAL GROWTH
Information Patent Application
A1xGa yIn 1-x-yN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHO...
- Publication number 20090194847
- Publication date Aug 6, 2009
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE AND SEMICONDUCTOR...
- Publication number 20090127662
- Publication date May 21, 2009
- Sumitomo Electric Industries, Ltd.
- Takuji Okahisa
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR CRYSTAL GROWING METHOD, GROUP III N...
- Publication number 20090127664
- Publication date May 21, 2009
- Sumitomo Electric Industries, Ltd.
- Takuji OKAHISA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR CRYSTAL GROWING METHOD, GROUP III N...
- Publication number 20090127663
- Publication date May 21, 2009
- SUMITOMO ELECTRIC INDUSTRIES LTD.
- Takuji Okahisa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing GaxIn1-xN(0<x>) Crystal Gaxin1-xn(0<x<1) Cryst...
- Publication number 20090032907
- Publication date Feb 5, 2009
- Tomoki Uemura
- C30 - CRYSTAL GROWTH
Information Patent Application
ALxGayIn1-x-yN substrate, cleaning method of AIxGayIn1-x-yN substra...
- Publication number 20080299375
- Publication date Dec 4, 2008
- Sumitomo Electric Industries, Ltd.
- Tomoki Uemura
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Cleaning Gaas Substrate, Method of Producing Gaas Substra...
- Publication number 20080292877
- Publication date Nov 27, 2008
- Yusuke Horie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Surface Treating Substrates and Method of Manufacturing I...
- Publication number 20070014915
- Publication date Jan 18, 2007
- Sumitomo Electric Industries, Ltd.
- Takayuki Nishiura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AlxGayIn1-x-yN substrate, cleaning method of AlxGayIn1-x-yN substra...
- Publication number 20060003134
- Publication date Jan 5, 2006
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Tomoki Uemura
- C30 - CRYSTAL GROWTH
Information Patent Application
Diamond substrate for surface acoustic wave device, and surface aco...
- Publication number 20030137217
- Publication date Jul 24, 2003
- Keiji Ishibashi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Method for separating chips from diamond wafer
- Publication number 20030127428
- Publication date Jul 10, 2003
- Satoshi Fujii
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
Diamond wafer, method of estimating a diamond wafer and diamond sur...
- Publication number 20010044029
- Publication date Nov 22, 2001
- Sumitomo Electric Industries Ltd.
- Satoshi Fujii
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Hard carbon film and surface-acoustic-wave substrate
- Publication number 20010030795
- Publication date Oct 18, 2001
- Sumitomo Electric Industries, Ltd.
- Satoshi Fujii
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Tomoki Uemura

Person

Patents Grantslast 30 patents

III-nitride single-crystal ingot, III-nitride single-crystal substr...

Group III nitride semiconductor crystal substrate and semiconductor...

GaN single-crystal mass and method of its manufacture, and semicond...

Method for manufacturing gallium nitride crystal and gallium nitrid...

AlxGayIn1−x−yN crystal substrate, semiconductor device, and method...

Method of surface treating substrates and method of manufacturing I...

AlxGayInl−x−yN substrate, cleaning method of AlxGayInl−x−yN substra...

Method for separating chips from diamond wafer

Diamond substrate for surface acoustic wave device, and surface aco...

Hard carbon film and surface-acoustic-wave substrate

Hard carbon film and surface acoustic-wave substrate

Diamond wafer, method of estimating a diamond wafer and diamond sur...

Diamond wafer, method of estimating a diamond wafer and diamond sur...

Diamond wafer, method of estimating a diamond wafer and diamond sur...

Diamond-ZnO surface acoustic wave device

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRID...

GaxIn1-xN Substrate and GaxIn1-xN Substrate Cleaning Method

III-Nitride Single-Crystal Ingot, III-Nitride Single-Crystal Substr...

GaN Single-Crystal Mass and Method of Its Manufacture, and Semicond...

Group III Nitride Semiconductor Crystal Substrate and Semiconductor...

METHOD FOR MANUFACTURING GALLIUM NITRIDE CRYSTAL AND GALLIUM NITRID...

A1xGa yIn 1-x-yN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHO...

GROUP III NITRIDE SEMICONDUCTOR CRYSTAL SUBSTRATE AND SEMICONDUCTOR...

GROUP III NITRIDE SEMICONDUCTOR CRYSTAL GROWING METHOD, GROUP III N...

GROUP III NITRIDE SEMICONDUCTOR CRYSTAL GROWING METHOD, GROUP III N...

Method for Producing GaxIn1-xN(0<x>) Crystal Gaxin1-xn(0<x<1) Cryst...

ALxGayIn1-x-yN substrate, cleaning method of AIxGayIn1-x-yN substra...

Method of Cleaning Gaas Substrate, Method of Producing Gaas Substra...

Method of Surface Treating Substrates and Method of Manufacturing I...

AlxGayIn1-x-yN substrate, cleaning method of AlxGayIn1-x-yN substra...

Diamond substrate for surface acoustic wave device, and surface aco...

Method for separating chips from diamond wafer

Diamond wafer, method of estimating a diamond wafer and diamond sur...

Hard carbon film and surface-acoustic-wave substrate