Tomoyuki Furuhata

Person

Salcata-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and electronic apparatus encapsulated in resin...
- Patent number 10,319,656
- Issue date Jun 11, 2019
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 9,997,625
- Issue date Jun 12, 2018
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,412,738
- Issue date Aug 9, 2016
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method for the same
- Patent number 9,397,171
- Issue date Jul 19, 2016
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 9,190,477
- Issue date Nov 17, 2015
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device manufacturing method
- Patent number 9,012,312
- Issue date Apr 21, 2015
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high-voltage breakdown protection
- Patent number 8,330,219
- Issue date Dec 11, 2012
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device and semiconductor device
- Patent number 7,972,917
- Issue date Jul 5, 2011
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices, methods of manufacturing semiconductor devic...
- Patent number 7,163,861
- Issue date Jan 16, 2007
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a non-volatile memory transistor and m...
- Patent number 7,026,685
- Issue date Apr 11, 2006
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a non-volatile memory transistor formed...
- Patent number 6,921,964
- Issue date Jul 26, 2005
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a non-volatile memory transistor and m...
- Patent number 6,838,336
- Issue date Jan 4, 2005
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having contact pads and methods of manufactur...
- Patent number 6,828,681
- Issue date Dec 7, 2004
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a non-volatile memory transistor and m...
- Patent number 6,812,519
- Issue date Nov 2, 2004
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices, circuit substrates and electronic devices
- Patent number 6,800,894
- Issue date Oct 5, 2004
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including a multi-well and split-gate non-vol...
- Patent number 6,756,629
- Issue date Jun 29, 2004
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a non-volatile memory transistor
- Patent number 6,717,204
- Issue date Apr 6, 2004
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a non-volatile memory transistor and m...
- Patent number 6,696,340
- Issue date Feb 24, 2004
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semiconductor memory device and manufacturing method t...
- Patent number 6,673,678
- Issue date Jan 6, 2004
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having a non-volatile memory transistor and m...
- Patent number 6,537,869
- Issue date Mar 25, 2003
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semiconductor memory devices
- Patent number 6,522,587
- Issue date Feb 18, 2003
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for manufacturing semiconductor devices having a non-volati...
- Patent number 6,429,073
- Issue date Aug 6, 2002
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semiconductor memory device and method of manufacturin...
- Patent number 6,355,526
- Issue date Mar 12, 2002
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device containing MOS elements and method of fabricat...
- Patent number 6,337,250
- Issue date Jan 8, 2002
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semiconductor memory device and manufacturing method t...
- Patent number 6,320,218
- Issue date Nov 20, 2001
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semiconductor memory device and fabrication method the...
- Patent number 6,294,427
- Issue date Sep 25, 2001
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonvolatile semiconductor memory device and method of manufacturing...
- Patent number 6,249,021
- Issue date Jun 19, 2001
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile semiconductor memory device and fabrication method the...
- Patent number 6,122,192
- Issue date Sep 19, 2000
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,336,911
- Issue date Aug 9, 1994
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,315,150
- Issue date May 24, 1994
- Seiko Epson Corporation
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS USING THE SAME
- Publication number 20170069557
- Publication date Mar 9, 2017
- SEIKO EPSON CORPORATION
- Tomoyuki FURUHATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20160064553
- Publication date Mar 3, 2016
- SEIKO EPSON CORPORATION
- Tomoyuki FURUHATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20150287719
- Publication date Oct 8, 2015
- SEIKO EPSON CORPORATION
- Tomoyuki FURUHATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
- Publication number 20150243741
- Publication date Aug 27, 2015
- SEIKO EPSON CORPORATION
- Tomoyuki FURUHATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20140312415
- Publication date Oct 23, 2014
- SEIKO EPSON CORPORATION
- Tomoyuki FURUHATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
- Publication number 20140287573
- Publication date Sep 25, 2014
- SEIKO EPSON CORPORATION
- Tomoyuki FURUHATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH HIGH-VOLTAGE BREAKDOWN PROTECTION
- Publication number 20130062694
- Publication date Mar 14, 2013
- SEIKO EPSON CORPORATION
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20100001345
- Publication date Jan 7, 2010
- SEIKO EPSON CORPORATION
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20100001342
- Publication date Jan 7, 2010
- SEIKO EPSON CORPORATION
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20020135012
- Publication date Sep 26, 2002
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile semiconductor memory device and manufacturing method t...
- Publication number 20020011623
- Publication date Jan 31, 2002
- SEIKO EPSON CORPORATION
- Tomoyuki Furuhata
- H01 - BASIC ELECTRIC ELEMENTS

Tomoyuki Furuhata

Person

Patents Grantslast 30 patents

Semiconductor device and electronic apparatus encapsulated in resin...

Semiconductor device and method for manufacturing the same

Semiconductor device

Semiconductor device and manufacturing method for the same

Semiconductor device and manufacturing method therefor

Semiconductor device manufacturing method

Semiconductor device with high-voltage breakdown protection

Method for manufacturing semiconductor device and semiconductor device

Semiconductor devices, methods of manufacturing semiconductor devic...

Semiconductor devices having a non-volatile memory transistor and m...

Semiconductor device having a non-volatile memory transistor formed...

Semiconductor devices having a non-volatile memory transistor and m...

Semiconductor devices having contact pads and methods of manufactur...

Semiconductor devices having a non-volatile memory transistor and m...

Semiconductor devices, circuit substrates and electronic devices

Semiconductor devices including a multi-well and split-gate non-vol...

Semiconductor devices having a non-volatile memory transistor

Semiconductor devices having a non-volatile memory transistor and m...

Non-volatile semiconductor memory device and manufacturing method t...

Semiconductor devices having a non-volatile memory transistor and m...

Non-volatile semiconductor memory devices

Methods for manufacturing semiconductor devices having a non-volati...

Non-volatile semiconductor memory device and method of manufacturin...

Semiconductor device containing MOS elements and method of fabricat...

Non-volatile semiconductor memory device and manufacturing method t...

Non-volatile semiconductor memory device and fabrication method the...

Nonvolatile semiconductor memory device and method of manufacturing...

Non-volatile semiconductor memory device and fabrication method the...

Semiconductor device

Semiconductor device and method of manufacturing the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS USING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

SEMICONDUCTOR DEVICE WITH HIGH-VOLTAGE BREAKDOWN PROTECTION

SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Semiconductor device and method for manufacturing the same

Non-volatile semiconductor memory device and manufacturing method t...