Toni D. Van Gompel

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Shallow trench isolation for SOI structures combining sidewall spac...
- Patent number 8,766,362
- Issue date Jul 1, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V. Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation for SOI structures combining sidewall spac...
- Patent number 8,236,638
- Issue date Aug 7, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V. Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor isolation trench
- Patent number 7,687,370
- Issue date Mar 30, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Toni D. Van Gompel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an electronic device including a semiconductor l...
- Patent number 7,670,895
- Issue date Mar 2, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Toni D. Van Gompel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming electronic device including a densified nitride...
- Patent number 7,528,078
- Issue date May 5, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Toni D. Van Gompel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an electronic device including a layer formed us...
- Patent number 7,491,622
- Issue date Feb 17, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Michael D. Turner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for elimination of excessive field oxide recess for thin Si SOI
- Patent number 7,037,857
- Issue date May 2, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Toni D. Van Gompel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation trench
- Patent number 6,979,627
- Issue date Dec 27, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Choh-Fei Yeap
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SHALLOW TRENCH ISOLATION FOR SOI STRUCTURES COMBINING SIDEWALL SPAC...
- Publication number 20140299935
- Publication date Oct 9, 2014
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V. Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION FOR SOI STRUCTURES COMBINING SIDEWALL SPAC...
- Publication number 20120273889
- Publication date Nov 1, 2012
- FREESCALE SEMICONDUCTOR, INC.
- Konstantin V. Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shallow trench isolation for SOI structures combining sidewall spac...
- Publication number 20080261361
- Publication date Oct 23, 2008
- Freescale Semiconductor, Inc.
- Konstantin V. Loiko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process of forming electronic device including a densified nitride...
- Publication number 20070264839
- Publication date Nov 15, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Toni D. Van Gompel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic device including a semiconductor layer and another layer...
- Publication number 20070246793
- Publication date Oct 25, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Toni D. Van Gompel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process of forming an electronic device including a layer formed us...
- Publication number 20070249160
- Publication date Oct 25, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Michael D. Turner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STI stressor integration for minimal phosphoric exposure and divot-...
- Publication number 20070249129
- Publication date Oct 25, 2007
- Freescale Semiconductor, Inc.
- Mark D. Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic device including a semiconductor layer and a sidewall sp...
- Publication number 20070249127
- Publication date Oct 25, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Rode R. Mora
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming a stressor structure
- Publication number 20070224772
- Publication date Sep 27, 2007
- Freescale Semiconductor, Inc.
- Mark D. Hall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electronic device including a trench field isolation region and a p...
- Publication number 20060261436
- Publication date Nov 23, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Michael D. Turner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming trench isolation in a semiconductor device
- Publication number 20060234467
- Publication date Oct 19, 2006
- Toni D. Van Gompel
- G11 - INFORMATION STORAGE
Information Patent Application
Isolation trench
- Publication number 20050242403
- Publication date Nov 3, 2005
- Choh-Fei Yeap
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for elimination of excessive field oxide reces...
- Publication number 20050130359
- Publication date Jun 16, 2005
- Toni D. Van Gompel
- H01 - BASIC ELECTRIC ELEMENTS

Toni D. Van Gompel

Person

Patents Grantslast 30 patents

Shallow trench isolation for SOI structures combining sidewall spac...

Shallow trench isolation for SOI structures combining sidewall spac...

Method of forming a semiconductor isolation trench

Process of forming an electronic device including a semiconductor l...

Process of forming electronic device including a densified nitride...

Process of forming an electronic device including a layer formed us...

Method for elimination of excessive field oxide recess for thin Si SOI

Isolation trench

Patents Applicationslast 30 patents

SHALLOW TRENCH ISOLATION FOR SOI STRUCTURES COMBINING SIDEWALL SPAC...

SHALLOW TRENCH ISOLATION FOR SOI STRUCTURES COMBINING SIDEWALL SPAC...

Shallow trench isolation for SOI structures combining sidewall spac...

Process of forming electronic device including a densified nitride...

Electronic device including a semiconductor layer and another layer...

Process of forming an electronic device including a layer formed us...

STI stressor integration for minimal phosphoric exposure and divot-...

Electronic device including a semiconductor layer and a sidewall sp...

Method for forming a stressor structure

Electronic device including a trench field isolation region and a p...

Method of forming trench isolation in a semiconductor device

Isolation trench

Method and apparatus for elimination of excessive field oxide reces...