Toshihide Kikkawa

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Goleta, CA, US

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Patents Grantslast 30 patents

Information Patent Grant
Enhancement mode III-nitride devices having an Al1-xSixO gate insul...
- Patent number 11,322,599
- Issue date May 3, 2022
- Transphorm Technology, Inc.
- Carl Joseph Neufeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 9,818,840
- Issue date Nov 14, 2017
- Transphorm Japan, Inc.
- Toshihide Kikkawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 9,640,648
- Issue date May 2, 2017
- Transphorm Japan, Inc.
- Toshihide Kikkawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed ohmic contacts in a III-N device
- Patent number 9,536,967
- Issue date Jan 3, 2017
- Transphorm Inc.
- Toshihide Kikkawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ENHANCEMENT MODE III-NITRIDE DEVICES HAVING AN AL1-XSIXO GATE INSUL...
- Publication number 20210043750
- Publication date Feb 11, 2021
- Transphorm Technology, Inc.
- Carl Joseph Neufeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20170207319
- Publication date Jul 20, 2017
- Transphorm Japan, Inc.
- Toshihide Kikkawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20160172476
- Publication date Jun 16, 2016
- Transphorm Japan, Inc.
- Toshihide Kikkawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED OHMIC CONTACTS IN A III-N DEVICE
- Publication number 20160172455
- Publication date Jun 16, 2016
- TRANSPHORM INC.
- Toshihide Kikkawa
- H01 - BASIC ELECTRIC ELEMENTS