Toshihiro Maki

Person

Yokohama-Shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Interconnector line of thin film, sputter target for forming the wi...
- Patent number RE45481
- Issue date Apr 21, 2015
- Kabushiki Kaisha Toshiba
- Takashi Ishigami
- 257 - Active solid-state devices
Information Patent Grant
Interconnector line of thin film, sputter target for forming the wi...
- Patent number RE41975
- Issue date Nov 30, 2010
- Kabushiki Kaisha Toshiba
- Takashi Ishigami
- 438 - Semiconductor device manufacturing: process
Information Patent Grant
Mo-W material for formation of wiring, Mo-W target and method for p...
- Patent number 7,153,589
- Issue date Dec 26, 2006
- Kabushiki Kaisha Toshiba
- Yasuo Kohsaka
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Refractory metal silicide target, method of manufacturing the targe...
- Patent number 6,352,628
- Issue date Mar 5, 2002
- Kabushiki Kaisha Toshiba
- Michio Sato
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Interconnector line of thin film, sputter target for forming the wi...
- Patent number 6,329,275
- Issue date Dec 11, 2001
- Kabushiki Kaisha Toshiba
- Takashi Ishigami
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Refractory metal silicide target, method of manufacturing the targe...
- Patent number 6,309,593
- Issue date Oct 30, 2001
- Kabushiki Kaisha Toshiba
- Michio Sato
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Mo-W material for formation of wiring, Mo-W target and method for p...
- Patent number 6,200,694
- Issue date Mar 13, 2001
- Kabushiki Kaisha Toshiba
- Yasuo Kohsaka
- B22 - CASTING POWDER METALLURGY
Information Patent Grant
Mo-W material for formation of wiring, Mo-W target and method for p...
- Patent number 5,913,100
- Issue date Jun 15, 1999
- Kabushiki Kaisha Toshiba
- Yasuo Kohsaka
- B22 - CASTING POWDER METALLURGY
Information Patent Grant
Highly purified metal material and sputtering target using the same
- Patent number 5,679,983
- Issue date Oct 21, 1997
- Kabushiki Kaisha Toshiba
- Takashi Ishigami
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Ti-W sputtering target and method for manufacturing same
- Patent number 5,470,527
- Issue date Nov 28, 1995
- Kabushiki Kaisha Toshiba
- Takashi Yamanobe
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Highly purified metal material and sputtering target using the same
- Patent number 5,458,697
- Issue date Oct 17, 1995
- Kabushiki Kaisha Toshiba
- Takashi Ishigami
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Sputtering target and method of manufacturing the same
- Patent number 5,418,071
- Issue date May 23, 1995
- Kabushiki Kaisha Toshiba
- Michio Satou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Highly purified metal material and sputtering target using the same
- Patent number 5,196,916
- Issue date Mar 23, 1993
- Kabushiki Kaisha Toshiba
- Takashi Ishigami
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...

Patents Applicationslast 30 patents

Information Patent Application
Refractory metal silicide target, method of manufacturing the targe...
- Publication number 20010037938
- Publication date Nov 8, 2001
- KABUSHIKI KAISHA TOSHIBA
- Michio Sato
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Toshihiro Maki

Person

Patents Grantslast 30 patents

Interconnector line of thin film, sputter target for forming the wi...

Interconnector line of thin film, sputter target for forming the wi...

Mo-W material for formation of wiring, Mo-W target and method for p...

Refractory metal silicide target, method of manufacturing the targe...

Interconnector line of thin film, sputter target for forming the wi...

Refractory metal silicide target, method of manufacturing the targe...

Mo-W material for formation of wiring, Mo-W target and method for p...

Mo-W material for formation of wiring, Mo-W target and method for p...

Highly purified metal material and sputtering target using the same

Ti-W sputtering target and method for manufacturing same

Highly purified metal material and sputtering target using the same

Sputtering target and method of manufacturing the same

Highly purified metal material and sputtering target using the same

Patents Applicationslast 30 patents

Refractory metal silicide target, method of manufacturing the targe...