Claims
- 1. A method of producing a wiring network on a substrate of a semi-conductor device, comprising the steps of:
- forming a thin film on said substrate of the semi-conductor device by sputtering a target consisting essentially of a highly purified metal comprising a metal selected from the group consisting of titanium, zirconium and hafnium, each containing not more than 10 ppm of Al; and
- treating said thin film by etching to remove portions other than the desired wiring network.
- 2. The method of producing the wiring network according to claim 1, wherein said thin film comprises a nitride of one of said metals.
- 3. A method of producing a wiring network according to claim 2, wherein said metal is titanium.
- 4. A method of producing a wiring network according to claim 2, wherein said metal is zirconium.
- 5. A method of producing a wiring network according to claim 2, wherein said metal is hafnium.
- 6. The method of producing the wiring network according to claim 1, wherein said semiconductor contains silicon, and said method further comprises the step of forming a silicide film from said thin film.
- 7. A method for producing a wiring network according to claim 6, wherein the step of forming the silicide film comprises a two step annealing treatment.
- 8. A method of producing a wiring network according to claim 7, wherein said metal is titanium.
- 9. A method of producing a wiring network according to claim 7, wherein said metal is zirconium.
- 10. A method of producing a wiring network according to claim 7, wherein said metal is hafnium.
- 11. A method of producing a wiring network according to claim 6, wherein the step of forming the silicide film takes place after said treating step.
- 12. A method of producing a wiring network according to claim 6, wherein said metal is titanium.
- 13. A method of producing a wiring network according to claim 6, wherein said metal is zirconium.
- 14. A method of producing a wiring network according to claim 6, wherein said metal is hafnium.
- 15. The method of producing the wiring network according to claim 1, wherein said highly purified metal contains not more than 250 ppm of oxygen; not more than 10 ppm each of elements consisting of Fe, Ni and Cr, and not more than 0.1 ppm each of elements consisting of Na and K.
- 16. A method of producing a wiring network according to claim 15, wherein said metal is titanium.
- 17. A method of producing a wiring network according to claim 15, wherein said metal is zirconium.
- 18. A method of producing a wiring network according to claim 15, wherein said metal is hafnium.
- 19. A method of producing a wiring network according to claim 1, wherein said metal is titanium.
- 20. A method of producing a wiring network according to claim 1, wherein said metal is zirconium.
- 21. A method of producing a wiring network according to claim 1, wherein said metal is hafnium.
- 22. A method of producing a wiring network according to claim 13, wherein said highly purified metal is produced by a method comprising the steps of:
- purifying a crude metal by an iodide process, and
- melting said purified metal with an electron beam in a high vacuum.
- 23. A method of producing a wiring network according to claim 1, wherein said highly purified metal is produced by a method comprising the steps of:
- purifying a crude metal by a fused salt electrolysis process,
- subjecting said metal to a surface treatment to remove a contaminated layer existing on the surface of said crude metal, and
- melting said purified metal with an electron beam in a high vacuum.
Priority Claims (1)
Number |
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2-36908 |
Feb 1990 |
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Parent Case Info
This application is a continuation of application Ser. No. 07/986,704, filed Dec. 8, 1992, abandoned which is a Rule 60 divisional of 07/655,950, filed Feb. 15, 1991, now U.S. Pat. No. 5,196,916.
US Referenced Citations (9)
Non-Patent Literature Citations (2)
Entry |
Lee, Seung-Yee, "Ti, Zr Smelting," Non-ferrous Metal Smelting Engineering, Korea, Jan. 25, 1987, pp. 406-408. |
Yang, Hun-Young, "Special Melt Refining Method," Iron & Steel Smelting Engineering, Korea, Jan. 25, 1987, pp. 424-425. |
Divisions (1)
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Date |
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655950 |
Feb 1991 |
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Continuations (1)
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986704 |
Dec 1992 |
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