Toshimasa Matsuoka

Person

Yao, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,927,463
- Issue date Aug 9, 2005
- Sharp Kabushiki Kaisha
- Hiroshi Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface-channel metal-oxide semiconductor transistors, their comple...
- Patent number 6,747,316
- Issue date Jun 8, 2004
- Sharp Kabushiki Kaisha
- Toshimasa Matsuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having junction depths for reducing short chan...
- Patent number 6,720,627
- Issue date Apr 13, 2004
- Sharp Kabushiki Kaisha
- Hiroshi Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,573,577
- Issue date Jun 3, 2003
- Sharp Kabushiki Kaisha
- Hiroshi Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,288,429
- Issue date Sep 11, 2001
- Sharp Kabushiki Kaisha
- Hiroshi Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having junction depths for reducing short chan...
- Patent number 6,255,702
- Issue date Jul 3, 2001
- Sharp Kabushiki Kaisha
- Hiroshi Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 6,255,704
- Issue date Jul 3, 2001
- Sharp Kabushiki Kaisha
- Hiroshi Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming insulating film with few hydrogen atom inclusions
- Patent number 5,976,918
- Issue date Nov 2, 1999
- Sharp Kabushiki Kaisha
- Toshimasa Matsuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method for a semiconductor device
- Patent number 5,960,319
- Issue date Sep 28, 1999
- Sharp Kabushiki Kaisha
- Hiroshi Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming gate dielectric films for MOSFETs without generat...
- Patent number 5,926,741
- Issue date Jul 20, 1999
- Sharp Kabushiki Kaisha
- Toshimasa Matsuoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor transistor devices
- Patent number 5,391,508
- Issue date Feb 21, 1995
- Sharp Kabushiki Kaisha
- Toshimasa Matsuoka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device having junction depths for reducing short chan...
- Publication number 20050045962
- Publication date Mar 3, 2005
- Sharp Kabushiki Kaisha
- Hiroshi Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for fabricating the same
- Publication number 20030230784
- Publication date Dec 18, 2003
- Hiroshi Iwata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE-CHANNEL METAL-OXIDE SEMICONDUCTOR TRANSISTORS, THEIR COMPLE...
- Publication number 20020043689
- Publication date Apr 18, 2002
- TOSHIMASA MATSUOKA
- H01 - BASIC ELECTRIC ELEMENTS

Toshimasa Matsuoka

Person

Patents Grantslast 30 patents

Semiconductor device and method for fabricating the same

Surface-channel metal-oxide semiconductor transistors, their comple...

Semiconductor device having junction depths for reducing short chan...

Semiconductor device and method for fabricating the same

Semiconductor device

Semiconductor device having junction depths for reducing short chan...

Semiconductor device and method for fabricating the same

Method of forming insulating film with few hydrogen atom inclusions

Fabrication method for a semiconductor device

Method of forming gate dielectric films for MOSFETs without generat...

Method of forming semiconductor transistor devices

Patents Applicationslast 30 patents

Semiconductor device having junction depths for reducing short chan...

Semiconductor device and method for fabricating the same

SURFACE-CHANNEL METAL-OXIDE SEMICONDUCTOR TRANSISTORS, THEIR COMPLE...