Toshirou Kotooka

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Production method of monocrystalline silicon based on an emissivity...
- Patent number 11,634,833
- Issue date Apr 25, 2023
- Sumco Corporation
- Shinichi Kawazoe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for pulling single crystal by CZ method
- Patent number 7,727,334
- Issue date Jun 1, 2010
- Sumco Techxiv Corporation
- Hiroshi Inagaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for manufacturing defect-free silicon single crystal
- Patent number 7,524,371
- Issue date Apr 28, 2009
- Sumco Techxiv Corporation
- Takashi Yokoyama
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Production method for silicon single crystal and production device...
- Patent number 7,141,113
- Issue date Nov 28, 2006
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Kozo Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for measuring melt level
- Patent number 6,994,748
- Issue date Feb 7, 2006
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Masato Moriya
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus for pulling single crystal by CZ method
- Patent number 6,977,010
- Issue date Dec 20, 2005
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Hiroshi Inagaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing silicon single crystal having no flaw
- Patent number 6,869,478
- Issue date Mar 22, 2005
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Kozo Nakamura
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and apparatus for manufacturing single-crystal ingot
- Patent number 6,858,076
- Issue date Feb 22, 2005
- Komatsu Electronic Metals Co., Ltd.
- Hirotaka Nakajima
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and apparatus for detecting melt level
- Patent number 6,572,699
- Issue date Jun 3, 2003
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Masato Moriya
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Device and method for producing single-crystal ingot
- Patent number 6,569,236
- Issue date May 27, 2003
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Shigeo Morimoto
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
System for manufacturing a single-crystal ingot employing czochrals...
- Patent number 6,458,203
- Issue date Oct 1, 2002
- Tadayuki Hanamoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Device for manufacturing single crystals
- Patent number 6,117,402
- Issue date Sep 12, 2000
- Komatsu Electronic Metals Co., Ltd.
- Toshirou Kotooka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for fabricating single-crystal silicon
- Patent number 6,071,341
- Issue date Jun 6, 2000
- Komatsu Electronic Metals Co., Ltd.
- Yoshiyuki Shimanuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for manufacturing semiconductor single crystals
- Patent number 5,935,326
- Issue date Aug 10, 1999
- Komatsu Electronic Metals Co., Ltd.
- Toshirou Kotooka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for fabricating semiconductor single crystal
- Patent number 5,900,059
- Issue date May 4, 1999
- Komatsu Electronic Metals Co., Ltd.
- Yoshiyuki Shimanuki
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
PRODUCTION METHOD OF MONOCRYSTALLINE SILICON
- Publication number 20220162769
- Publication date May 26, 2022
- SUMCO CORPORATION
- Shinichi KAWAZOE
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for pulling single crystal by CZ method
- Publication number 20090173272
- Publication date Jul 9, 2009
- KOMATSU DENSHI KINOZOKU KABUSHIKI KAISHA
- Hiroshi Inagaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for pulling single crystal by CZ method
- Publication number 20080311021
- Publication date Dec 18, 2008
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Hiroshi Inagaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for pulling single crystal by CZ method
- Publication number 20080311019
- Publication date Dec 18, 2008
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Hiroshi Inagaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Evaluating Quality of Silicon Single Crystal
- Publication number 20080302295
- Publication date Dec 11, 2008
- Toshirou Kotooka
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for pulling single crystal by CZ method
- Publication number 20070256625
- Publication date Nov 8, 2007
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Hiroshi Inagaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for manufacturing a silicon single crystal
- Publication number 20070240629
- Publication date Oct 18, 2007
- Sumco Techxiv Corporation
- Toshirou Kotooka
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for pulling single crystal by CZ method
- Publication number 20050268840
- Publication date Dec 8, 2005
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Hiroshi Inagaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for pulling single crystal by CZ method
- Publication number 20030154907
- Publication date Aug 21, 2003
- Komatsu Denshi Kinzoku Kabushiki Kaisha
- Hiroshi Inagaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Method and apparatus for measuring melt level
- Publication number 20030116729
- Publication date Jun 26, 2003
- Masato Moriya
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing silicon single crystal having no flaw
- Publication number 20030041796
- Publication date Mar 6, 2003
- Kozo Nakamura
- C30 - CRYSTAL GROWTH

Toshirou Kotooka

Person

Patents Grantslast 30 patents

Production method of monocrystalline silicon based on an emissivity...

Apparatus for pulling single crystal by CZ method

Method for manufacturing defect-free silicon single crystal

Production method for silicon single crystal and production device...

Method and apparatus for measuring melt level

Apparatus for pulling single crystal by CZ method

Method for producing silicon single crystal having no flaw

Method and apparatus for manufacturing single-crystal ingot

Method and apparatus for detecting melt level

Device and method for producing single-crystal ingot

System for manufacturing a single-crystal ingot employing czochrals...

Device for manufacturing single crystals

Apparatus for fabricating single-crystal silicon

Apparatus for manufacturing semiconductor single crystals

Method and apparatus for fabricating semiconductor single crystal

Patents Applicationslast 30 patents

PRODUCTION METHOD OF MONOCRYSTALLINE SILICON

Apparatus for pulling single crystal by CZ method

Apparatus for pulling single crystal by CZ method

Apparatus for pulling single crystal by CZ method

Method of Evaluating Quality of Silicon Single Crystal

Apparatus for pulling single crystal by CZ method

Method for manufacturing a silicon single crystal

Apparatus for pulling single crystal by CZ method

Apparatus for pulling single crystal by CZ method

Method and apparatus for measuring melt level

Method for producing silicon single crystal having no flaw