Tsung-Sheng KANG

Person

Ballston Lake, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Top via interconnects with line wiggling prevention
- Patent number 12,266,605
- Issue date Apr 1, 2025
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain epitaxy process in stacked FET
- Patent number 12,262,552
- Issue date Mar 25, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
Information Patent Grant
Self-aligned via to metal line for interconnect
- Patent number 12,080,640
- Issue date Sep 3, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
AI accelerator with MRAM, PCM, and recessed PCM bottom electrode
- Patent number 12,075,627
- Issue date Aug 27, 2024
- International Business Machines Corporation
- Ruilong Xie
- G11 - INFORMATION STORAGE
Information Patent Grant
Static random access memory using vertical transport field effect t...
- Patent number 11,956,939
- Issue date Apr 9, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Via patterning for integrated circuits
- Patent number 11,942,424
- Issue date Mar 26, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nonmetallic liner around a magnetic tunnel junction
- Patent number 11,849,647
- Issue date Dec 19, 2023
- International Business Machines Corporation
- Tao Li
Information Patent Grant
Stacked vertical transport field-effect transistor logic gate struc...
- Patent number 11,810,918
- Issue date Nov 7, 2023
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staggered stacked vertical crystalline semiconducting channels
- Patent number 11,756,961
- Issue date Sep 12, 2023
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static random access memory using vertical transport field effect t...
- Patent number 11,678,475
- Issue date Jun 13, 2023
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor with asymmetric gate stack
- Patent number 11,652,156
- Issue date May 16, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual resistive random-access memory with two transistors
- Patent number 11,605,673
- Issue date Mar 14, 2023
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric structure to prevent hard mask erosion
- Patent number 11,562,908
- Issue date Jan 24, 2023
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of bottom epitaxy parasitics for vertical transport field...
- Patent number 11,557,675
- Issue date Jan 17, 2023
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of bottom epitaxy parasitics for vertical transport field...
- Patent number 11,271,107
- Issue date Mar 8, 2022
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staggered stacked vertical crystalline semiconducting channels
- Patent number 11,251,182
- Issue date Feb 15, 2022
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor with asymmetric gate stack
- Patent number 11,251,288
- Issue date Feb 15, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-bar vertical transport field effect transistors without corne...
- Patent number 11,251,301
- Issue date Feb 15, 2022
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sloped epitaxy buried contact
- Patent number 11,227,922
- Issue date Jan 18, 2022
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
BOTTOM ISOLATION EXTENSION REGION
- Publication number 20250142903
- Publication date May 1, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
Information Patent Application
CONTACT PLACEHOLDER FORMATION FOR DIFFERENT DEVICE TYPES
- Publication number 20250133827
- Publication date Apr 24, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
Information Patent Application
GATE CUT STRUCTURE INCLUDING AN AIRGAP
- Publication number 20250126829
- Publication date Apr 17, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
Information Patent Application
STACKED FETS CONTAINING DIFFERENT SHAPED INNER SPACERS
- Publication number 20250107218
- Publication date Mar 27, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
Information Patent Application
SPACER PROTECTING SEMICONDUCTOR SUBSTRATE UNDER PASSIVE DEVICE DURI...
- Publication number 20250107227
- Publication date Mar 27, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
Information Patent Application
CMOS INTEGRATION FOR DOPED PLACEHOLDER AS DIRECT BACKSIDE CONTACT
- Publication number 20250098268
- Publication date Mar 20, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
Information Patent Application
STRAIN INDUCING TRENCHES FOR SOURCE/DRAIN REGIONS
- Publication number 20250098229
- Publication date Mar 20, 2025
- International Business Machines Corporation
- Sagarika Mukesh
Information Patent Application
WRAP AROUND BACKSIDE CONTACT FOR S/D WITH BACKSIDE TRENCH EPI AND B...
- Publication number 20250081541
- Publication date Mar 6, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACE CONFINED EPI FOR STACKED FET
- Publication number 20250081550
- Publication date Mar 6, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE POWER RAIL TO BACKSIDE CONTACT CONNECTION
- Publication number 20250048677
- Publication date Feb 6, 2025
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORK SHEET DEVICE
- Publication number 20240429284
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE EPITAXY FOR SEMICONDUCTOR STRUCTURES
- Publication number 20240429283
- Publication date Dec 26, 2024
- International Business Machines Corporation
- Alexander Reznicek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLACEHOLDER WITH DIELECTRIC LINER PROTECTION TO PREVENT DIRECT BACK...
- Publication number 20240421085
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACTS FOR GATE, SOURCE, AND DRAIN
- Publication number 20240421003
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FVBP WITHOUT BACKSIDE Si RECESS
- Publication number 20240405112
- Publication date Dec 5, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID MEMORY ON FRONT AND BACKSIDE OF A WAFER
- Publication number 20240373654
- Publication date Nov 7, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
Information Patent Application
VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR WITH LATE FIN CUT
- Publication number 20240339523
- Publication date Oct 10, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORKSHEET TRANSISTOR WITH DUAL DEPTH LATE CELL BOUNDARY CUT
- Publication number 20240332294
- Publication date Oct 3, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE INCLUDING RC-BASED POWER RAIL ESD CLAMPING CIRCUIT
- Publication number 20240332181
- Publication date Oct 3, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS COUPLED STACKED TRANSISTORS
- Publication number 20240304626
- Publication date Sep 12, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED UPPER TRANSISTOR AND LOWER TRANSISTOR
- Publication number 20240304625
- Publication date Sep 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE GATE VIA STRUCTURE USING SELF-ALIGNED SCHEME
- Publication number 20240297098
- Publication date Sep 5, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER VIA WITHIN BACKSIDE LEVEL
- Publication number 20240290688
- Publication date Aug 29, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT FORMATION
- Publication number 20240266409
- Publication date Aug 8, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTER WITH BACKSIDE POWER DELIVERY NETWORK
- Publication number 20240222378
- Publication date Jul 4, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID CMOS WITH FIN AND NANOSHEET ARCHITECTURES
- Publication number 20240222375
- Publication date Jul 4, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE-CONNECTING VIA WITH NANOSHEET SPACERS FOR TRANSISTORS
- Publication number 20240222395
- Publication date Jul 4, 2024
- International Business Machines Corporation
- Oscar van der Straten
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET DEVICE WITH NITRIDE ISOLATION STRUCTURES
- Publication number 20240222426
- Publication date Jul 4, 2024
- International Business Machines Corporation
- Sagarika Mukesh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DECOUPLING MIM CAPACITOR
- Publication number 20240213141
- Publication date Jun 27, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTENDED SOURCE/DRAIN CONTACT FOR SHIFTED DRAIN VOLTAGE FOR A BACKS...
- Publication number 20240213337
- Publication date Jun 27, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS

Tsung-Sheng KANG

Person

Patents Grantslast 30 patents

Top via interconnects with line wiggling prevention

Source/drain epitaxy process in stacked FET

Self-aligned via to metal line for interconnect

AI accelerator with MRAM, PCM, and recessed PCM bottom electrode

Static random access memory using vertical transport field effect t...

Via patterning for integrated circuits

Nonmetallic liner around a magnetic tunnel junction

Stacked vertical transport field-effect transistor logic gate struc...

Staggered stacked vertical crystalline semiconducting channels

Static random access memory using vertical transport field effect t...

Nanosheet transistor with asymmetric gate stack

Dual resistive random-access memory with two transistors

Dielectric structure to prevent hard mask erosion

Reduction of bottom epitaxy parasitics for vertical transport field...

Reduction of bottom epitaxy parasitics for vertical transport field...

Staggered stacked vertical crystalline semiconducting channels

Nanosheet transistor with asymmetric gate stack

Cross-bar vertical transport field effect transistors without corne...

Sloped epitaxy buried contact

Patents Applicationslast 30 patents

BOTTOM ISOLATION EXTENSION REGION

CONTACT PLACEHOLDER FORMATION FOR DIFFERENT DEVICE TYPES

GATE CUT STRUCTURE INCLUDING AN AIRGAP

STACKED FETS CONTAINING DIFFERENT SHAPED INNER SPACERS

SPACER PROTECTING SEMICONDUCTOR SUBSTRATE UNDER PASSIVE DEVICE DURI...

CMOS INTEGRATION FOR DOPED PLACEHOLDER AS DIRECT BACKSIDE CONTACT

STRAIN INDUCING TRENCHES FOR SOURCE/DRAIN REGIONS

WRAP AROUND BACKSIDE CONTACT FOR S/D WITH BACKSIDE TRENCH EPI AND B...

SPACE CONFINED EPI FOR STACKED FET

BACKSIDE POWER RAIL TO BACKSIDE CONTACT CONNECTION

FORK SHEET DEVICE

BACKSIDE EPITAXY FOR SEMICONDUCTOR STRUCTURES

PLACEHOLDER WITH DIELECTRIC LINER PROTECTION TO PREVENT DIRECT BACK...

BACKSIDE CONTACTS FOR GATE, SOURCE, AND DRAIN

FVBP WITHOUT BACKSIDE Si RECESS

HYBRID MEMORY ON FRONT AND BACKSIDE OF A WAFER

VERTICAL TRANSPORT FIELD-EFFECT TRANSISTOR WITH LATE FIN CUT

FORKSHEET TRANSISTOR WITH DUAL DEPTH LATE CELL BOUNDARY CUT

STRUCTURE INCLUDING RC-BASED POWER RAIL ESD CLAMPING CIRCUIT

CROSS COUPLED STACKED TRANSISTORS

STACKED UPPER TRANSISTOR AND LOWER TRANSISTOR

BACKSIDE GATE VIA STRUCTURE USING SELF-ALIGNED SCHEME

SUPER VIA WITHIN BACKSIDE LEVEL

BACKSIDE CONTACT FORMATION

INVERTER WITH BACKSIDE POWER DELIVERY NETWORK

HYBRID CMOS WITH FIN AND NANOSHEET ARCHITECTURES

BACKSIDE-CONNECTING VIA WITH NANOSHEET SPACERS FOR TRANSISTORS

NANOSHEET DEVICE WITH NITRIDE ISOLATION STRUCTURES

DECOUPLING MIM CAPACITOR

EXTENDED SOURCE/DRAIN CONTACT FOR SHIFTED DRAIN VOLTAGE FOR A BACKS...