Tzyh-Cheang Lee

Person

Hsin-Chu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Butted contact shape to improve SRAM leakage current
- Patent number 9,337,205
- Issue date May 10, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzyh-Cheang Lee
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods of forming phase change memory with various grain sizes
- Patent number 9,190,610
- Issue date Nov 17, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Sheng Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a resistive non-volatile memory device
- Patent number 9,112,144
- Issue date Aug 18, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Butted contact shape to improve SRAM leakage current
- Patent number 9,006,826
- Issue date Apr 14, 2015
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzyh-Cheang Lee
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of fabricating a SONOS gate structure with dual-thickness oxide
- Patent number 8,653,576
- Issue date Feb 18, 2014
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory with various grain sizes
- Patent number 8,618,524
- Issue date Dec 31, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Sheng Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory array with a selector connected to multiple resistive cells
- Patent number 8,173,990
- Issue date May 8, 2012
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzyh-Cheang Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive non-volatile memory device
- Patent number 8,154,003
- Issue date Apr 10, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory
- Patent number 7,989,920
- Issue date Aug 2, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzyh-Cheang Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory with various grain sizes
- Patent number 7,893,420
- Issue date Feb 22, 2011
- Taiwan Seminconductor Manufacturing Company, Ltd.
- Chun-Sheng Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device having a generally L-shaped cross-sectio...
- Patent number 7,847,335
- Issue date Dec 7, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall memory with self-aligned asymmetrical source and drain con...
- Patent number 7,732,310
- Issue date Jun 8, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device with polysilicon spacer and method of fo...
- Patent number 7,714,376
- Issue date May 11, 2010
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory
- Patent number 7,705,424
- Issue date Apr 27, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzyh-Cheang Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory array with a selector connected to multiple resistive cells
- Patent number 7,663,134
- Issue date Feb 16, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzyh-Cheang Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory cell with roundless micro-trenches
- Patent number 7,642,170
- Issue date Jan 5, 2010
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistive memory device having enhanced resist ratio and method of...
- Patent number 7,579,612
- Issue date Aug 25, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd
- Denny Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells with improved program/erase windows
- Patent number 7,573,095
- Issue date Aug 11, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzyh-Cheang Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and method of fabricating the same
- Patent number 7,541,639
- Issue date Jun 2, 2009
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory array structure
- Patent number 7,538,384
- Issue date May 26, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a non-volatile memory
- Patent number 7,488,645
- Issue date Feb 10, 2009
- United Microelectronics Corp.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory
- Patent number 7,485,919
- Issue date Feb 3, 2009
- United Microelectronics Corp.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of an non-volatile memory
- Patent number 7,485,533
- Issue date Feb 3, 2009
- United Microelectronics Corp.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing of memory array and periphery
- Patent number 7,482,231
- Issue date Jan 27, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for a sidewall SONOS memory device
- Patent number 7,482,236
- Issue date Jan 27, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for a sidewall SONOS memory device
- Patent number 7,405,119
- Issue date Jul 29, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile floating gate memory cells with polysilicon storage do...
- Patent number 7,355,236
- Issue date Apr 8, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-poly EEPROM
- Patent number 7,193,265
- Issue date Mar 20, 2007
- United Microelectronics Corp.
- Nai-Chen Peng
- G11 - INFORMATION STORAGE
Information Patent Grant
Self-aligned conductive spacer process for sidewall control gate of...
- Patent number 7,176,084
- Issue date Feb 13, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 7,123,518
- Issue date Oct 17, 2006
- United Microelectronics Crop.
- Ching-Hung Cheng
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
BUTTED CONTACT SHAPE TO IMPROVE SRAM LEAKAGE CURRENT
- Publication number 20150194432
- Publication date Jul 9, 2015
- Taiwan Semiconductor Manufacturing Co., LTD
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase Change Memory with Various Grain Sizes
- Publication number 20140110656
- Publication date Apr 24, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Sheng Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BUTTED CONTACT SHAPE TO IMPROVE SRAM LEAKAGE CURRENT
- Publication number 20130299905
- Publication date Nov 14, 2013
- Taiwan Semiconductor Manufacturing Co., LTD
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A RESISTIVE NON-VOLATILE MEMORY DEVICE
- Publication number 20120178210
- Publication date Jul 12, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase Change Memory with Various Grain Sizes
- Publication number 20110140066
- Publication date Jun 16, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Sheng Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase Change Memory
- Publication number 20100140580
- Publication date Jun 10, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzyh-Cheang Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Sidewall SONOS Gate Structure with Dual-Thickness Oxide and Method...
- Publication number 20100136779
- Publication date Jun 3, 2010
- Taiwan Semiconductor Manufacturing Co., LTD
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Array with a Selector Connected to Multiple Resistive Cells
- Publication number 20100117045
- Publication date May 13, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzyh-Cheang Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Phase Change Memory Device
- Publication number 20090230375
- Publication date Sep 17, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Sheng Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase change memory cell with roundless micro-trenches
- Publication number 20090087945
- Publication date Apr 2, 2009
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzyh Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase Change Memory with Various Grain Sizes
- Publication number 20090078924
- Publication date Mar 26, 2009
- Chun-Sheng Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE NON-VOLATILE MEMORY DEVICE
- Publication number 20090039332
- Publication date Feb 12, 2009
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Array with a Selector Connected to Multiple Resistive Cells
- Publication number 20090014836
- Publication date Jan 15, 2009
- Tzyh-Cheang Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Phase Change Memory
- Publication number 20080285328
- Publication date Nov 20, 2008
- Tzyh-Cheang Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Resistive memory device having enhanced resist ratio and method of...
- Publication number 20080266931
- Publication date Oct 30, 2008
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Denny Tang
- G11 - INFORMATION STORAGE
Information Patent Application
Memory device and method of fabricating the same
- Publication number 20080230829
- Publication date Sep 25, 2008
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICE WITH POLYSILICON SPACER AND METHOD OF FO...
- Publication number 20080142867
- Publication date Jun 19, 2008
- Taiwan Semiconductor Manufacturing Co., LTD
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory cells with improved program/erase windows
- Publication number 20080128791
- Publication date Jun 5, 2008
- Tzyh-Cheang Lee
- G11 - INFORMATION STORAGE
Information Patent Application
Sidewall memory with self-aligned asymmetrical source and drain con...
- Publication number 20080132015
- Publication date Jun 5, 2008
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY AND FABRICATION THEREOF
- Publication number 20080020529
- Publication date Jan 24, 2008
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure for a non-volatile memory device
- Publication number 20070291526
- Publication date Dec 20, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzyh-Cheang Lee
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY
- Publication number 20070272970
- Publication date Nov 29, 2007
- United Microelectronics Corp.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method for a sidewall SONOS non-volatile memory device
- Publication number 20070238237
- Publication date Oct 11, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method for a sidewall SONOS memory device
- Publication number 20070212841
- Publication date Sep 13, 2007
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing of memory array and periphery
- Publication number 20070161174
- Publication date Jul 12, 2007
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method for a sidewall SONOS memory device
- Publication number 20070161195
- Publication date Jul 12, 2007
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile floating gate memory cells with polysilicon storage do...
- Publication number 20070145465
- Publication date Jun 28, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile memory array structure
- Publication number 20070126053
- Publication date Jun 7, 2007
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned conductive spacer process for sidewall control gate of...
- Publication number 20070096200
- Publication date May 3, 2007
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sidewall SONOS gate structure with dual-thickness oxide and method...
- Publication number 20070075385
- Publication date Apr 5, 2007
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzyh-Cheang Lee
- H01 - BASIC ELECTRIC ELEMENTS

Tzyh-Cheang Lee

Person

Patents Grantslast 30 patents

Butted contact shape to improve SRAM leakage current

Methods of forming phase change memory with various grain sizes

Method of fabricating a resistive non-volatile memory device

Butted contact shape to improve SRAM leakage current

Method of fabricating a SONOS gate structure with dual-thickness oxide

Phase change memory with various grain sizes

Memory array with a selector connected to multiple resistive cells

Resistive non-volatile memory device

Phase change memory

Phase change memory with various grain sizes

Non-volatile memory device having a generally L-shaped cross-sectio...

Sidewall memory with self-aligned asymmetrical source and drain con...

Non-volatile memory device with polysilicon spacer and method of fo...

Phase change memory

Memory array with a selector connected to multiple resistive cells

Phase change memory cell with roundless micro-trenches

Resistive memory device having enhanced resist ratio and method of...

Memory cells with improved program/erase windows

Memory device and method of fabricating the same

Non-volatile memory array structure

Method of fabricating a non-volatile memory

Non-volatile memory

Fabrication method of an non-volatile memory

Manufacturing of memory array and periphery

Structure and method for a sidewall SONOS memory device

Structure and method for a sidewall SONOS memory device

Non-volatile floating gate memory cells with polysilicon storage do...

Single-poly EEPROM

Self-aligned conductive spacer process for sidewall control gate of...

Memory device

Patents Applicationslast 30 patents

BUTTED CONTACT SHAPE TO IMPROVE SRAM LEAKAGE CURRENT

Phase Change Memory with Various Grain Sizes

BUTTED CONTACT SHAPE TO IMPROVE SRAM LEAKAGE CURRENT

METHOD OF FABRICATING A RESISTIVE NON-VOLATILE MEMORY DEVICE

Phase Change Memory with Various Grain Sizes

Phase Change Memory

Sidewall SONOS Gate Structure with Dual-Thickness Oxide and Method...

Memory Array with a Selector Connected to Multiple Resistive Cells

Phase Change Memory Device

Phase change memory cell with roundless micro-trenches

Phase Change Memory with Various Grain Sizes

RESISTIVE NON-VOLATILE MEMORY DEVICE

Memory Array with a Selector Connected to Multiple Resistive Cells

Phase Change Memory

Resistive memory device having enhanced resist ratio and method of...

Memory device and method of fabricating the same

NON-VOLATILE MEMORY DEVICE WITH POLYSILICON SPACER AND METHOD OF FO...

Memory cells with improved program/erase windows

Sidewall memory with self-aligned asymmetrical source and drain con...

NON-VOLATILE MEMORY AND FABRICATION THEREOF

Structure for a non-volatile memory device

NON-VOLATILE MEMORY

Structure and method for a sidewall SONOS non-volatile memory device

Structure and method for a sidewall SONOS memory device

Manufacturing of memory array and periphery

Structure and method for a sidewall SONOS memory device

Non-volatile floating gate memory cells with polysilicon storage do...

Non-volatile memory array structure

Self-aligned conductive spacer process for sidewall control gate of...

Sidewall SONOS gate structure with dual-thickness oxide and method...