Ulrich Klostermann

Person

Fontainebleau, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Method and apparatus for fast and local anneal of anti-ferromagneti...
- Patent number 8,470,092
- Issue date Jun 25, 2013
- International Business Machines Corporation
- Ulrich Karl Klostermann
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method and apparatus for fast and local anneal of anti-ferromagneti...
- Patent number 8,105,445
- Issue date Jan 31, 2012
- International Business Machines Corporation
- Ulrich Karl Klostermann
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
MRAM structure using sacrificial layer for anti-ferromagnet and met...
- Patent number 7,782,577
- Issue date Aug 24, 2010
- Infineon Technologies AG
- Wolfgang Raberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory having cap structure for magnetoresistive junction and metho...
- Patent number 7,602,032
- Issue date Oct 13, 2009
- Altis Semiconductor SNC
- Ulrich Klostermann
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fast and local anneal of anti-ferromagnetic (AF) exchang...
- Patent number 7,473,656
- Issue date Jan 6, 2009
- International Business Machines Corporation
- Ulrich Karl Klostermann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory structure and method of manufacture
- Patent number 7,423,282
- Issue date Sep 9, 2008
- Infineon Technologies AG
- Chanro Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for controlling constant power dissipation
- Patent number 7,411,854
- Issue date Aug 12, 2008
- Infineon Technologies AG
- Ulrich Klostermann
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM memory cell with a reference layer and method for fabricating
- Patent number 7,309,617
- Issue date Dec 18, 2007
- Infineon Technologies AG
- Manfred Ruehrig
- G11 - INFORMATION STORAGE
Information Patent Grant
Adiabatic rotational switching memory element including a ferromagn...
- Patent number 7,205,596
- Issue date Apr 17, 2007
- Infineon Technologies, AG
- Ulrich Klostermann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junctions for MRAM devices
- Patent number 7,149,105
- Issue date Dec 12, 2006
- Infineon Technologies AG
- Stephen L. Brown
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction cap structure and method for forming the same
- Patent number 7,112,861
- Issue date Sep 26, 2006
- International Business Machines Corporation
- Sivananda K. Kanakasabapathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM with magnetic via for storage of information and field sensor
- Patent number 7,092,284
- Issue date Aug 15, 2006
- Infineon Technologies AG
- Daniel Braun
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM with vertical storage element in two layer-arrangement and fie...
- Patent number 7,088,612
- Issue date Aug 8, 2006
- Infineon Technologies AG
- Daniel Braun
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for reducing Neel coupling in toggle switching semicondu...
- Patent number 7,081,658
- Issue date Jul 25, 2006
- International Business Machines Corporation
- Daniel Christopher Worledge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory with static magnetic offset field
- Patent number 7,075,807
- Issue date Jul 11, 2006
- Infineon Technologies AG
- Rainer Leuschner
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for homogeneously magnetizing an exchange-coupled layer syst...
- Patent number 7,075,814
- Issue date Jul 11, 2006
- Infineon Technologies AG
- Hubert Brueckl
- G11 - INFORMATION STORAGE
Information Patent Grant
Field ramp down for pinned synthetic antiferromagnet
- Patent number 7,061,787
- Issue date Jun 13, 2006
- International Business Machines Corporation
- Philip Louis Trouilloud
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND APPARATUS FOR FAST AND LOCAL ANNEAL OF ANTI-FERROMAGNETI...
- Publication number 20100314360
- Publication date Dec 16, 2010
- International Business Machines Corporation
- Ulrich Karl Klostermann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR FAST AND LOCAL ANNEAL OF ANTI-FERROMAGNETI...
- Publication number 20080308537
- Publication date Dec 18, 2008
- International Business Machines Corporation
- Ulrich Karl Klostermann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shared ground contact isolation structure for high-density magneto-...
- Publication number 20070296007
- Publication date Dec 27, 2007
- Human Park
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM structure using sacrificial layer for anti-ferromagnet and met...
- Publication number 20070278602
- Publication date Dec 6, 2007
- Wolfgang Raberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and method for controlling constant power dissipation
- Publication number 20070242549
- Publication date Oct 18, 2007
- Ulrich Klostermann
- G11 - INFORMATION STORAGE
Information Patent Application
High-density high current device cell
- Publication number 20070069296
- Publication date Mar 29, 2007
- Human Park
- B82 - NANO-TECHNOLOGY
Information Patent Application
Adiabatic rotational switching memory element including a ferromagn...
- Publication number 20060244021
- Publication date Nov 2, 2006
- Ulrich Klostermann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory having cap structure for magnetoresistive junction and metho...
- Publication number 20060245116
- Publication date Nov 2, 2006
- Ulrich Klostermann
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive memory element having a stacked structure
- Publication number 20060171197
- Publication date Aug 3, 2006
- Ulrich Klostermann
- G11 - INFORMATION STORAGE
Information Patent Application
Reference current source for current sense amplifier and programmab...
- Publication number 20060092689
- Publication date May 4, 2006
- Daniel Braun
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic memory with static magnetic offset field
- Publication number 20060038211
- Publication date Feb 23, 2006
- Rainer Leuschner
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM with magnetic via for storage of information and field sensor
- Publication number 20060039185
- Publication date Feb 23, 2006
- Daniel Braun
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM with vertical storage element in two layer-arrangement and fie...
- Publication number 20060039186
- Publication date Feb 23, 2006
- Daniel Braun
- G11 - INFORMATION STORAGE
Information Patent Application
Techniques for reducing neel coupling in toggle switching semicondu...
- Publication number 20050285168
- Publication date Dec 29, 2005
- International Business Machines Corporation
- Daniel Christopher Worledge
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETIC TUNNEL JUNCTION CAP STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20050254180
- Publication date Nov 17, 2005
- International Business Machines Corporation
- Sivananda K. Kanakasabapathy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field ramp down for pinned synthetic antiferromagnet
- Publication number 20050243600
- Publication date Nov 3, 2005
- International Business Machines Corporation
- Philip Louis Trouilloud
- G11 - INFORMATION STORAGE
Information Patent Application
Method for producing a reference layer and an mram memory cell prov...
- Publication number 20050208680
- Publication date Sep 22, 2005
- Infineon Technologies AG
- Manfred Ruehrig
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic tunnel junctions for MRAM devices
- Publication number 20050185454
- Publication date Aug 25, 2005
- Stephen L. Brown
- G11 - INFORMATION STORAGE
Information Patent Application
Method for homogeneously magnetizing an exchange-coupled layer syst...
- Publication number 20050105355
- Publication date May 19, 2005
- Hubert Brueckl
- G11 - INFORMATION STORAGE
Information Patent Application
Method and apparatus for fast and local anneal of anti-ferromagneti...
- Publication number 20050087519
- Publication date Apr 28, 2005
- International Business Machines Corporation
- Ulrich Karl Klostermann
- H01 - BASIC ELECTRIC ELEMENTS

Ulrich Klostermann

Person

Patents Grantslast 30 patents

Method and apparatus for fast and local anneal of anti-ferromagneti...

Method and apparatus for fast and local anneal of anti-ferromagneti...

MRAM structure using sacrificial layer for anti-ferromagnet and met...

Memory having cap structure for magnetoresistive junction and metho...

Method for fast and local anneal of anti-ferromagnetic (AF) exchang...

Memory structure and method of manufacture

System and method for controlling constant power dissipation

MRAM memory cell with a reference layer and method for fabricating

Adiabatic rotational switching memory element including a ferromagn...

Magnetic tunnel junctions for MRAM devices

Magnetic tunnel junction cap structure and method for forming the same

MRAM with magnetic via for storage of information and field sensor

MRAM with vertical storage element in two layer-arrangement and fie...

Techniques for reducing Neel coupling in toggle switching semicondu...

Magnetic memory with static magnetic offset field

Method for homogeneously magnetizing an exchange-coupled layer syst...

Field ramp down for pinned synthetic antiferromagnet

Patents Applicationslast 30 patents

METHOD AND APPARATUS FOR FAST AND LOCAL ANNEAL OF ANTI-FERROMAGNETI...

METHOD AND APPARATUS FOR FAST AND LOCAL ANNEAL OF ANTI-FERROMAGNETI...

Shared ground contact isolation structure for high-density magneto-...

MRAM structure using sacrificial layer for anti-ferromagnet and met...

System and method for controlling constant power dissipation

High-density high current device cell

Adiabatic rotational switching memory element including a ferromagn...

Memory having cap structure for magnetoresistive junction and metho...

Magnetoresistive memory element having a stacked structure

Reference current source for current sense amplifier and programmab...

Magnetic memory with static magnetic offset field

MRAM with magnetic via for storage of information and field sensor

MRAM with vertical storage element in two layer-arrangement and fie...

Techniques for reducing neel coupling in toggle switching semicondu...

MAGNETIC TUNNEL JUNCTION CAP STRUCTURE AND METHOD FOR FORMING THE SAME

Field ramp down for pinned synthetic antiferromagnet

Method for producing a reference layer and an mram memory cell prov...

Magnetic tunnel junctions for MRAM devices

Method for homogeneously magnetizing an exchange-coupled layer syst...

Method and apparatus for fast and local anneal of anti-ferromagneti...