Unsoon Kim

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming high-voltage transistor with thin gate poly
- Patent number 11,690,227
- Issue date Jun 27, 2023
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory first process flow and device
- Patent number 11,342,429
- Issue date May 24, 2022
- Cypress Semiconductor Corporation
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge trapping split gate device and method of fabricating same
- Patent number 10,923,601
- Issue date Feb 16, 2021
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded non-volatile memory device and fabrication method of the same
- Patent number 10,872,898
- Issue date Dec 22, 2020
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory first process flow and device
- Patent number 10,818,761
- Issue date Oct 27, 2020
- Cypress Semiconductor Corporation
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate flash cell formed on recessed substrate
- Patent number 10,497,710
- Issue date Dec 3, 2019
- Cypress Semiconductor Corporation
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory first process flow and device
- Patent number 10,403,731
- Issue date Sep 3, 2019
- Cypress Semiconductor Corporation
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high-voltage transistor with thin gate poly
- Patent number 10,242,996
- Issue date Mar 26, 2019
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing of FET devices having lightly doped drain and source...
- Patent number 10,177,040
- Issue date Jan 8, 2019
- Cypress Semiconductor Corporation
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional capacitor
- Patent number 10,141,393
- Issue date Nov 27, 2018
- Cypress Semiconductor Corporation
- Mark Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory first process flow and device
- Patent number 10,014,380
- Issue date Jul 3, 2018
- Cypress Semiconductor Corporation
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge trapping split gate device and method of fabricating same
- Patent number 9,966,477
- Issue date May 8, 2018
- Cypress Semiconductor Corporation
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge trapping split gate embedded flash memory and associated met...
- Patent number 9,922,833
- Issue date Mar 20, 2018
- Cypress Semiconductor Corporation
- Mark Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory first process flow and device
- Patent number 9,917,166
- Issue date Mar 13, 2018
- Cypress Semiconductor Corporation
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory cells having trenched storage elements
- Patent number 9,917,211
- Issue date Mar 13, 2018
- Cypress Semiconductor Corporation
- Wei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate flash cell formed on recessed substrate
- Patent number 9,853,039
- Issue date Dec 26, 2017
- Cypress Semiconductor Corporation
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Split-gate flash cell formed on recessed substrate
- Patent number 9,818,755
- Issue date Nov 14, 2017
- Cypress Semiconductor Corporation
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory first process flow and device
- Patent number 9,368,606
- Issue date Jun 14, 2016
- Cypress Semiconductor Corporation
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory gate landing pad made from dummy features
- Patent number 9,209,197
- Issue date Dec 8, 2015
- Cypress Semiconductor Corporation
- Mark Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating memory cells having split charge storage nodes
- Patent number 9,159,568
- Issue date Oct 13, 2015
- Cypress Semiconductor Corporation
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process charging protection for split gate charge trapping flash
- Patent number 8,816,438
- Issue date Aug 26, 2014
- Spansion LLC
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for improving reliability in a semiconductor device
- Patent number 8,802,537
- Issue date Aug 12, 2014
- Spansion LLC
- Yider Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for reducing cross-coupling noise between charge...
- Patent number 8,759,894
- Issue date Jun 24, 2014
- Spansion LLC
- Yider Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flash memory cells having trenched storage elements
- Patent number 8,742,486
- Issue date Jun 3, 2014
- Spansion, LLC
- Wei Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for improving mesa width in a semiconductor device
- Patent number 8,598,645
- Issue date Dec 3, 2013
- Spansion LLC
- Unsoon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory comprising dual charge storage nodes and metho...
- Patent number 8,076,712
- Issue date Dec 13, 2011
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for improving reliability in a semiconductor device
- Patent number 7,985,687
- Issue date Jul 26, 2011
- Advanced Micro Devices, Inc.
- Angela T. Hui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for improving mesa width in a semiconductor device
- Patent number 7,842,618
- Issue date Nov 30, 2010
- Spansion LLC
- Unsoon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual storage node memory devices and methods for fabricating the same
- Patent number 7,785,965
- Issue date Aug 31, 2010
- Spansion LLC
- Unsoon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory comprising dual charge storage nodes and metho...
- Patent number 7,767,517
- Issue date Aug 3, 2010
- Spansion LLC
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HIGH-VOLTAGE TRANSISTOR WITH THIN HIGH-K METAL GATE AND METHOD OF F...
- Publication number 20240206183
- Publication date Jun 20, 2024
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming High-Voltage Transistor with Thin Gate Poly
- Publication number 20240008279
- Publication date Jan 4, 2024
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming High-Voltage Transistor with Thin Gate Poly
- Publication number 20210296343
- Publication date Sep 23, 2021
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD OF THE SAME
- Publication number 20210134811
- Publication date May 6, 2021
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory First Process Flow and Device
- Publication number 20210091198
- Publication date Mar 25, 2021
- CYPRESS SEMICONDUCTOR CORPORATION
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory First Process Flow and Device
- Publication number 20190386109
- Publication date Dec 19, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming High-Voltage Transistor with Thin Gate Poly
- Publication number 20190304990
- Publication date Oct 3, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming High-Voltage Transistor with Thin Gate Poly
- Publication number 20190027487
- Publication date Jan 24, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD OF THE SAME
- Publication number 20190027484
- Publication date Jan 24, 2019
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory First Process Flow and Device
- Publication number 20180366551
- Publication date Dec 20, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge Trapping Split Gate Device and Method of Fabricating Same
- Publication number 20180323314
- Publication date Nov 8, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Chun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Split-Gate Flash Cell formed on Recessed Substrate
- Publication number 20180166458
- Publication date Jun 14, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Sung-Taeg Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing of FET Devices Having Lightly Doped Drain and Source...
- Publication number 20170221768
- Publication date Aug 3, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory First Process Flow and Device
- Publication number 20170141201
- Publication date May 18, 2017
- CYPRESS SEMICONDUCTOR CORPORATION
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory First Process Flow and Device
- Publication number 20160293720
- Publication date Oct 6, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Shenqing Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE TRAPPING SPLIT GATE EMBEDDED FLASH MEMORY AND ASSOCIATED MET...
- Publication number 20160111292
- Publication date Apr 21, 2016
- CYPRESS SEMICONDUCTOR CORPORATION
- Mark RAMSBEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLASH MEMORY CELLS HAVING TRENCHED STORAGE ELEMENTS
- Publication number 20140225177
- Publication date Aug 14, 2014
- SPANSION LLC
- Wei ZHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Manufacturing of FET Devices Having Lightly Doped Drain and Source...
- Publication number 20140210012
- Publication date Jul 31, 2014
- SPANSION LLC
- Shenqing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge Trapping Split Gate Embedded Flash Memory and Associated Met...
- Publication number 20140167141
- Publication date Jun 19, 2014
- SPANSION LLC
- Mark RAMSBEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process Charging Protection for Split Gate Charge Trapping Flash
- Publication number 20140167135
- Publication date Jun 19, 2014
- SPANSION LLC
- Chun CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory First Process Flow and Device
- Publication number 20140167140
- Publication date Jun 19, 2014
- SPANSION LLC
- Shenqing FANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Gate Landing Pad Made From Dummy Features
- Publication number 20140167128
- Publication date Jun 19, 2014
- SPANSION LLC
- Mark RAMSBEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL CAPACITOR
- Publication number 20140167220
- Publication date Jun 19, 2014
- SPANSION LLC
- Mark RAMSBEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Charge Trapping Split Gate Device and Method of Fabricating Same
- Publication number 20140170843
- Publication date Jun 19, 2014
- SPANSION LLC
- Chun CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR IMPROVING MESA WIDTH IN A SEMICONDUCTOR DEVICE
- Publication number 20110037115
- Publication date Feb 17, 2011
- SPANSION LLC
- Unsoon KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY COMPRISING DUAL CHARGE STORAGE NODES AND METHO...
- Publication number 20100283100
- Publication date Nov 11, 2010
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY COMPRISING DUAL CHARGE STORAGE NODES AND METHO...
- Publication number 20080149999
- Publication date Jun 26, 2008
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory cells having split charge storage nodes and methods for fabr...
- Publication number 20080142875
- Publication date Jun 19, 2008
- Chungho Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL STORAGE NODE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME
- Publication number 20080064165
- Publication date Mar 13, 2008
- Unsoon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Flash memory cells having trenched storage elements
- Publication number 20070205455
- Publication date Sep 6, 2007
- Wei Zheng
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Method of forming high-voltage transistor with thin gate poly

Memory first process flow and device

Charge trapping split gate device and method of fabricating same

Embedded non-volatile memory device and fabrication method of the same

Memory first process flow and device

Split-gate flash cell formed on recessed substrate

Memory first process flow and device

Method of forming high-voltage transistor with thin gate poly

Manufacturing of FET devices having lightly doped drain and source...

Three dimensional capacitor

Memory first process flow and device

Charge trapping split gate device and method of fabricating same

Charge trapping split gate embedded flash memory and associated met...

Memory first process flow and device

Flash memory cells having trenched storage elements

Split-gate flash cell formed on recessed substrate

Split-gate flash cell formed on recessed substrate

Memory first process flow and device

Memory gate landing pad made from dummy features

Method for fabricating memory cells having split charge storage nodes

Process charging protection for split gate charge trapping flash

System and method for improving reliability in a semiconductor device

System and method for reducing cross-coupling noise between charge...

Flash memory cells having trenched storage elements

System and method for improving mesa width in a semiconductor device

Semiconductor memory comprising dual charge storage nodes and metho...

System and method for improving reliability in a semiconductor device

System and method for improving mesa width in a semiconductor device

Dual storage node memory devices and methods for fabricating the same

Semiconductor memory comprising dual charge storage nodes and metho...

Patents Applicationslast 30 patents

HIGH-VOLTAGE TRANSISTOR WITH THIN HIGH-K METAL GATE AND METHOD OF F...

Method of Forming High-Voltage Transistor with Thin Gate Poly

Method of Forming High-Voltage Transistor with Thin Gate Poly

EMBEDDED NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD OF THE SAME

Memory First Process Flow and Device

Memory First Process Flow and Device

Method of Forming High-Voltage Transistor with Thin Gate Poly

Method of Forming High-Voltage Transistor with Thin Gate Poly

EMBEDDED NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD OF THE SAME

Memory First Process Flow and Device

Charge Trapping Split Gate Device and Method of Fabricating Same

Split-Gate Flash Cell formed on Recessed Substrate

Manufacturing of FET Devices Having Lightly Doped Drain and Source...

Memory First Process Flow and Device

Memory First Process Flow and Device

CHARGE TRAPPING SPLIT GATE EMBEDDED FLASH MEMORY AND ASSOCIATED MET...

FLASH MEMORY CELLS HAVING TRENCHED STORAGE ELEMENTS

Manufacturing of FET Devices Having Lightly Doped Drain and Source...

Charge Trapping Split Gate Embedded Flash Memory and Associated Met...

Process Charging Protection for Split Gate Charge Trapping Flash

Memory First Process Flow and Device

Memory Gate Landing Pad Made From Dummy Features

THREE DIMENSIONAL CAPACITOR

Charge Trapping Split Gate Device and Method of Fabricating Same

SYSTEM AND METHOD FOR IMPROVING MESA WIDTH IN A SEMICONDUCTOR DEVICE

SEMICONDUCTOR MEMORY COMPRISING DUAL CHARGE STORAGE NODES AND METHO...

SEMICONDUCTOR MEMORY COMPRISING DUAL CHARGE STORAGE NODES AND METHO...

Memory cells having split charge storage nodes and methods for fabr...

DUAL STORAGE NODE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME

Flash memory cells having trenched storage elements