Uygar E. Avci

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit structures with graphene contacts
- Patent number 12,369,382
- Issue date Jul 22, 2025
- Intel Corporation
- Carl H. Naylor
Information Patent Grant
Contact gating for 2D field effect transistors
- Patent number 12,349,438
- Issue date Jul 1, 2025
- Intel Corporation
- Kirby Maxey
Information Patent Grant
Thin film transistors having semiconductor structures integrated wi...
- Patent number 12,349,442
- Issue date Jul 1, 2025
- Intel Corporation
- Ashish Verma Penumatcha
Information Patent Grant
Embedded memory IC's with power supply droop circuitry coupled to f...
- Patent number 12,327,581
- Issue date Jun 10, 2025
- Intel Corporation
- Wilfred Gomes
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistors including two-dimensional materials
- Patent number 12,324,204
- Issue date Jun 3, 2025
- Intel Corporation
- Carl Hugo Naylor
Information Patent Grant
Gate dielectrics for complementary metal oxide semiconductors trans...
- Patent number 12,310,101
- Issue date May 20, 2025
- Intel Corporation
- Ashish Verma Penumatcha
Information Patent Grant
TMD inverted nanowire integration
- Patent number 12,278,289
- Issue date Apr 15, 2025
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide nanosheet transistors and methods o...
- Patent number 12,266,712
- Issue date Apr 1, 2025
- Intel Corporation
- Ashish Verma Penumatcha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Angled etch to enable tin removal from selected sidewalls
- Patent number 12,266,729
- Issue date Apr 1, 2025
- Intel Corporation
- Nafees A. Kabir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with monocrystalline metal chalcogenide channel materials
- Patent number 12,266,720
- Issue date Apr 1, 2025
- Intel Corporation
- Carl Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitors with built-in electric fields
- Patent number 12,224,309
- Issue date Feb 11, 2025
- Intel Corporation
- Sou-Chi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide nanowires and methods of fabrication
- Patent number 12,176,388
- Issue date Dec 24, 2024
- Intel Corporation
- Kevin O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor (FET) with self-aligned ferroelectric capac...
- Patent number 12,166,122
- Issue date Dec 10, 2024
- Intel Corporation
- Shriram Shivaraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezo-resistive transistor based resonator with anti-ferroelectric...
- Patent number 12,125,893
- Issue date Oct 22, 2024
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide (TMD) layer stack for transistor ap...
- Patent number 12,125,895
- Issue date Oct 22, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezo-resistive transistor based resonator with ferroelectric gate...
- Patent number 12,113,117
- Issue date Oct 8, 2024
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal insulator metal (MIM) capacitor
- Patent number 12,107,040
- Issue date Oct 1, 2024
- Intel Corporation
- Aaron J. Welsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline bottom electrode for perovskite capacitors and methods...
- Patent number 12,100,731
- Issue date Sep 24, 2024
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional nanoribbon-based dynamic random-access memory
- Patent number 12,058,849
- Issue date Aug 6, 2024
- Intel Corporation
- Wilfred Gomes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitors and methods of fabrication
- Patent number 12,048,165
- Issue date Jul 23, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric or anti-ferroelectric trench capacitor with spacers f...
- Patent number 12,040,378
- Issue date Jul 16, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level spin logic
- Patent number 11,990,899
- Issue date May 21, 2024
- Intel Corporation
- Sasikanth Manipatruni
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Memory cells with ferroelectric capacitors separate from transistor...
- Patent number 11,980,037
- Issue date May 7, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TMD inverted nanowire integration
- Patent number 11,935,956
- Issue date Mar 19, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-transfer spacers for stacked nanoribbon 2D transistors
- Patent number 11,908,950
- Issue date Feb 20, 2024
- Intel Corporation
- Kirby Maxey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MFM capacitor and process for forming such
- Patent number 11,901,400
- Issue date Feb 13, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunneling field-effect transistors
- Patent number 11,862,715
- Issue date Jan 2, 2024
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer insulator stack for ferroelectric transistor and capacitor
- Patent number 11,799,029
- Issue date Oct 24, 2023
- Intel Corporation
- Uygar E. Avci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 11,785,759
- Issue date Oct 10, 2023
- Intel Corporation
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MFM capacitor with multilayered oxides and metals and processes for...
- Patent number 11,769,789
- Issue date Sep 26, 2023
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ENHANCING DEVICE PERFORMANCE BY MITIGATION OF OXYGEN MIGRATION IN H...
- Publication number 20250220921
- Publication date Jul 3, 2025
- Intel Corporation
- Mahmut Sami Kavrik
Information Patent Application
DEFECT SELF-COMPENSATION MATERIALS FOR HIGH ENDURANCE (ANTI-)FERROE...
- Publication number 20250220932
- Publication date Jul 3, 2025
- Intel Corporation
- Sou-Chi Chang
Information Patent Application
DIRECT TRANSFER OF TRANSITION METAL DICHALCOGENIDE MONOLAYERS USING...
- Publication number 20250113521
- Publication date Apr 3, 2025
- Intel Corporation
- Andrey Vyatskikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A 2D CHANNEL TRANSISTOR BY EMPLOYING SELECTIV...
- Publication number 20250113572
- Publication date Apr 3, 2025
- Intel Corporation
- Mahmut Sami Kavrik
Information Patent Application
TRANSITION METAL DICHALCOGENIDE MONOLAYER TRANSFER USING LOW STRAIN...
- Publication number 20250113573
- Publication date Apr 3, 2025
- Intel Corporation
- Andrey Vyatskikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE POWER GATING
- Publication number 20250112122
- Publication date Apr 3, 2025
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES
- Publication number 20250113599
- Publication date Apr 3, 2025
- Intel Corporation
- Rachel A. Steinhardt
Information Patent Application
TRANSFER OF A 2D MATERIAL TO A TARGET SUBSTRATE
- Publication number 20250113520
- Publication date Apr 3, 2025
- Intel Corporation
- Andrey Vyatskikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACERS FOR 2D CHANNEL...
- Publication number 20250113547
- Publication date Apr 3, 2025
- Intel Corporation
- Chia-Ching LIN
Information Patent Application
TRANSISTOR COMPRISING A COMPOSITE GATE DIELECTRIC STRUCTURE AND MET...
- Publication number 20250113540
- Publication date Apr 3, 2025
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITORS FOR USE WITH INTEGRATED CIRCUIT PACKAGES
- Publication number 20250105136
- Publication date Mar 27, 2025
- Intel Corporation
- Kimin Jun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ARCHITECTURES AND METHODS TO MODULATE CONTACT RESISTANCE IN 2D MATE...
- Publication number 20250107147
- Publication date Mar 27, 2025
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM
- Publication number 20250006434
- Publication date Jan 2, 2025
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED MEMORY CELL WITH REPLACEMENT METAL GATE VERTICAL ACCES...
- Publication number 20250008740
- Publication date Jan 2, 2025
- Intel Corporation
- Wriddhi Chakraborty
Information Patent Application
P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...
- Publication number 20250006839
- Publication date Jan 2, 2025
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR
- Publication number 20240395696
- Publication date Nov 28, 2024
- Intel Corporation
- Aaron J. WELSH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR
- Publication number 20240395695
- Publication date Nov 28, 2024
- Intel Corporation
- Aaron J. WELSH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION
- Publication number 20240373644
- Publication date Nov 7, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUITS WITH MONOLAYER TMD CHANNEL AND MULTILAYER TMD S...
- Publication number 20240355934
- Publication date Oct 24, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS
- Publication number 20240222428
- Publication date Jul 4, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL CONTACT METALS FOR 2D TRANSISTORS
- Publication number 20240222461
- Publication date Jul 4, 2024
- Intel Corporation
- Ande Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...
- Publication number 20240222482
- Publication date Jul 4, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...
- Publication number 20240222484
- Publication date Jul 4, 2024
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...
- Publication number 20240222113
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES
- Publication number 20240222441
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D NANORIBBONS UTILIZING SILICON SCAFFOLDING
- Publication number 20240222483
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...
- Publication number 20240222485
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TMD INVERTED NANOWIRE INTEGRATION
- Publication number 20240186416
- Publication date Jun 6, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROEL...
- Publication number 20240114693
- Publication date Apr 4, 2024
- Intel Corporation
- Christopher M. Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A...
- Publication number 20240112730
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- G11 - INFORMATION STORAGE

Uygar E. Avci

Person

Patents Grantslast 30 patents

Integrated circuit structures with graphene contacts

Contact gating for 2D field effect transistors

Thin film transistors having semiconductor structures integrated wi...

Embedded memory IC's with power supply droop circuitry coupled to f...

Transistors including two-dimensional materials

Gate dielectrics for complementary metal oxide semiconductors trans...

TMD inverted nanowire integration

Transition metal dichalcogenide nanosheet transistors and methods o...

Angled etch to enable tin removal from selected sidewalls

Transistors with monocrystalline metal chalcogenide channel materials

Capacitors with built-in electric fields

Transition metal dichalcogenide nanowires and methods of fabrication

Field-effect transistor (FET) with self-aligned ferroelectric capac...

Piezo-resistive transistor based resonator with anti-ferroelectric...

Transition metal dichalcogenide (TMD) layer stack for transistor ap...

Piezo-resistive transistor based resonator with ferroelectric gate...

Metal insulator metal (MIM) capacitor

Crystalline bottom electrode for perovskite capacitors and methods...

Three-dimensional nanoribbon-based dynamic random-access memory

Ferroelectric capacitors and methods of fabrication

Ferroelectric or anti-ferroelectric trench capacitor with spacers f...

Multi-level spin logic

Memory cells with ferroelectric capacitors separate from transistor...

TMD inverted nanowire integration

Charge-transfer spacers for stacked nanoribbon 2D transistors

MFM capacitor and process for forming such

Vertical tunneling field-effect transistors

Multilayer insulator stack for ferroelectric transistor and capacitor

Floating body memory cell having gates favoring different conductiv...

MFM capacitor with multilayered oxides and metals and processes for...

Patents Applicationslast 30 patents

ENHANCING DEVICE PERFORMANCE BY MITIGATION OF OXYGEN MIGRATION IN H...

DEFECT SELF-COMPENSATION MATERIALS FOR HIGH ENDURANCE (ANTI-)FERROE...

DIRECT TRANSFER OF TRANSITION METAL DICHALCOGENIDE MONOLAYERS USING...

METHOD OF FABRICATING A 2D CHANNEL TRANSISTOR BY EMPLOYING SELECTIV...

TRANSITION METAL DICHALCOGENIDE MONOLAYER TRANSFER USING LOW STRAIN...

BACKSIDE POWER GATING

METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES

TRANSFER OF A 2D MATERIAL TO A TARGET SUBSTRATE

INTEGRATED CIRCUIT STRUCTURES WITH INTERNAL SPACERS FOR 2D CHANNEL...

TRANSISTOR COMPRISING A COMPOSITE GATE DIELECTRIC STRUCTURE AND MET...

CAPACITORS FOR USE WITH INTEGRATED CIRCUIT PACKAGES

ARCHITECTURES AND METHODS TO MODULATE CONTACT RESISTANCE IN 2D MATE...

FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM

SELF-ALIGNED MEMORY CELL WITH REPLACEMENT METAL GATE VERTICAL ACCES...

P-TYPE PEROVSKITE FERROELECTRIC FIELD EFFECT TRANSISTOR (FEFET) DEV...

METAL INSULATOR METAL (MIM) CAPACITOR

METAL INSULATOR METAL (MIM) CAPACITOR

FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION

INTEGRATED CIRCUITS WITH MONOLAYER TMD CHANNEL AND MULTILAYER TMD S...

SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS

BEOL CONTACT METALS FOR 2D TRANSISTORS

TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...

TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...

PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...

SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES

2D NANORIBBONS UTILIZING SILICON SCAFFOLDING

TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...

TMD INVERTED NANOWIRE INTEGRATION

SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROEL...

DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A...