Uygar E. Avci

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Piezo-resistive transistor based resonator with anti-ferroelectric...
- Patent number 12,125,893
- Issue date Oct 22, 2024
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transition metal dichalcogenide (TMD) layer stack for transistor ap...
- Patent number 12,125,895
- Issue date Oct 22, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezo-resistive transistor based resonator with ferroelectric gate...
- Patent number 12,113,117
- Issue date Oct 8, 2024
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal insulator metal (MIM) capacitor
- Patent number 12,107,040
- Issue date Oct 1, 2024
- Intel Corporation
- Aaron J. Welsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline bottom electrode for perovskite capacitors and methods...
- Patent number 12,100,731
- Issue date Sep 24, 2024
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional nanoribbon-based dynamic random-access memory
- Patent number 12,058,849
- Issue date Aug 6, 2024
- Intel Corporation
- Wilfred Gomes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitors and methods of fabrication
- Patent number 12,048,165
- Issue date Jul 23, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric or anti-ferroelectric trench capacitor with spacers f...
- Patent number 12,040,378
- Issue date Jul 16, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level spin logic
- Patent number 11,990,899
- Issue date May 21, 2024
- Intel Corporation
- Sasikanth Manipatruni
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Memory cells with ferroelectric capacitors separate from transistor...
- Patent number 11,980,037
- Issue date May 7, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TMD inverted nanowire integration
- Patent number 11,935,956
- Issue date Mar 19, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-transfer spacers for stacked nanoribbon 2D transistors
- Patent number 11,908,950
- Issue date Feb 20, 2024
- Intel Corporation
- Kirby Maxey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MFM capacitor and process for forming such
- Patent number 11,901,400
- Issue date Feb 13, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunneling field-effect transistors
- Patent number 11,862,715
- Issue date Jan 2, 2024
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer insulator stack for ferroelectric transistor and capacitor
- Patent number 11,799,029
- Issue date Oct 24, 2023
- Intel Corporation
- Uygar E. Avci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating body memory cell having gates favoring different conductiv...
- Patent number 11,785,759
- Issue date Oct 10, 2023
- Intel Corporation
- Peter L. D. Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MFM capacitor with multilayered oxides and metals and processes for...
- Patent number 11,769,789
- Issue date Sep 26, 2023
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer high-k gate dielectric for a high performance logic tran...
- Patent number 11,742,407
- Issue date Aug 29, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low overhead, high bandwidth re-configurable interconnect apparatus...
- Patent number 11,734,174
- Issue date Aug 22, 2023
- Intel Corporation
- Huichu Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Field effect transistors having ferroelectric or antiferroelectric...
- Patent number 11,735,652
- Issue date Aug 22, 2023
- Intel Corporation
- Seiyon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Applications of back-end-of-line (BEOL) capacitors in compute-in-me...
- Patent number 11,727,260
- Issue date Aug 15, 2023
- Intel Corporation
- Abhishek Sharma
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Replacement metal COB integration process for embedded DRAM
- Patent number 11,723,188
- Issue date Aug 8, 2023
- Intel Corporation
- Uygar Avci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stacks for FinFET transistors
- Patent number 11,695,051
- Issue date Jul 4, 2023
- Intel Corporation
- Ashish Penumatcha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FeFET with embedded conductive sidewall spacers and process for for...
- Patent number 11,653,502
- Issue date May 16, 2023
- Intel Corporation
- Shriram Shivaraman
- G11 - INFORMATION STORAGE
Information Patent Grant
Piezo-resistive transistor based resonator with anti-ferroelectric...
- Patent number 11,646,356
- Issue date May 9, 2023
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric transistors to store multiple states of resistances f...
- Patent number 11,646,374
- Issue date May 9, 2023
- Intel Corporation
- Ashish Verma Penumatcha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with (anti)ferroelectric spacer structures
- Patent number 11,640,984
- Issue date May 2, 2023
- Intel Corporation
- Jack Kavalieros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezo-resistive transistor based resonator with ferroelectric gate...
- Patent number 11,637,191
- Issue date Apr 25, 2023
- Intel Corporation
- Tanay Gosavi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor with extended dielectric layer
- Patent number 11,626,475
- Issue date Apr 11, 2023
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with variously conformal gate dielectric layers
- Patent number 11,616,130
- Issue date Mar 28, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION
- Publication number 20240373644
- Publication date Nov 7, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUITS WITH MONOLAYER TMD CHANNEL AND MULTILAYER TMD S...
- Publication number 20240355934
- Publication date Oct 24, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS
- Publication number 20240222428
- Publication date Jul 4, 2024
- Intel Corporation
- Chelsey Dorow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BEOL CONTACT METALS FOR 2D TRANSISTORS
- Publication number 20240222461
- Publication date Jul 4, 2024
- Intel Corporation
- Ande Kitamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...
- Publication number 20240222482
- Publication date Jul 4, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...
- Publication number 20240222484
- Publication date Jul 4, 2024
- Intel Corporation
- Chia-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...
- Publication number 20240222113
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES
- Publication number 20240222441
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D NANORIBBONS UTILIZING SILICON SCAFFOLDING
- Publication number 20240222483
- Publication date Jul 4, 2024
- Intel Corporation
- Carl H. Naylor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...
- Publication number 20240222485
- Publication date Jul 4, 2024
- Intel Corporation
- Mahmut Sami Kavrik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TMD INVERTED NANOWIRE INTEGRATION
- Publication number 20240186416
- Publication date Jun 6, 2024
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROEL...
- Publication number 20240114693
- Publication date Apr 4, 2024
- Intel Corporation
- Christopher M. Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A...
- Publication number 20240112730
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-...
- Publication number 20240112714
- Publication date Apr 4, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS
- Publication number 20240114695
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECT...
- Publication number 20240114697
- Publication date Apr 4, 2024
- Intel Corporation
- Shriram SHIVARAMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT
- Publication number 20240112731
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- G11 - INFORMATION STORAGE
Information Patent Application
CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION
- Publication number 20240113101
- Publication date Apr 4, 2024
- Intel Corporation
- Sourav Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS
- Publication number 20240114692
- Publication date Apr 4, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY
- Publication number 20240114696
- Publication date Apr 4, 2024
- Intel Corporation
- Christopher Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC
- Publication number 20240113220
- Publication date Apr 4, 2024
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC CAPACITOR WITHIN BACKSIDE INTERCONNECT
- Publication number 20240114694
- Publication date Apr 4, 2024
- Intel Corporation
- Sourav Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE 2D TRANSISTOR
- Publication number 20240006521
- Publication date Jan 4, 2024
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT ARCHITECTURE FOR 2D STACKED NANORIBBON TRANSISTOR
- Publication number 20240006484
- Publication date Jan 4, 2024
- Intel Corporation
- Ashish Verma PENUMATCHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALTERNATING SACRIFICIAL LAYER MATERIALS FOR MECHANICALLY STABLE 2D...
- Publication number 20240006481
- Publication date Jan 4, 2024
- Intel Corporation
- Chelsey DOROW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE 2D MEMORY CELL
- Publication number 20240008290
- Publication date Jan 4, 2024
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ASSEMBLED MONOLAYER ON A DIELECTRIC FOR TRANSITION METAL DICHA...
- Publication number 20230420510
- Publication date Dec 28, 2023
- Intel Corporation
- Carl H. NAYLOR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
2D LAYERED GATE OXIDE
- Publication number 20230420514
- Publication date Dec 28, 2023
- Intel Corporation
- Chelsey DOROW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL O...
- Publication number 20230420364
- Publication date Dec 28, 2023
- Intel Corporation
- Kevin P. O'Brien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED...
- Publication number 20230420511
- Publication date Dec 28, 2023
- Intel Corporation
- Carl H. NAYLOR
- H01 - BASIC ELECTRIC ELEMENTS

Uygar E. Avci

Person

Patents Grantslast 30 patents

Piezo-resistive transistor based resonator with anti-ferroelectric...

Transition metal dichalcogenide (TMD) layer stack for transistor ap...

Piezo-resistive transistor based resonator with ferroelectric gate...

Metal insulator metal (MIM) capacitor

Crystalline bottom electrode for perovskite capacitors and methods...

Three-dimensional nanoribbon-based dynamic random-access memory

Ferroelectric capacitors and methods of fabrication

Ferroelectric or anti-ferroelectric trench capacitor with spacers f...

Multi-level spin logic

Memory cells with ferroelectric capacitors separate from transistor...

TMD inverted nanowire integration

Charge-transfer spacers for stacked nanoribbon 2D transistors

MFM capacitor and process for forming such

Vertical tunneling field-effect transistors

Multilayer insulator stack for ferroelectric transistor and capacitor

Floating body memory cell having gates favoring different conductiv...

MFM capacitor with multilayered oxides and metals and processes for...

Multilayer high-k gate dielectric for a high performance logic tran...

Low overhead, high bandwidth re-configurable interconnect apparatus...

Field effect transistors having ferroelectric or antiferroelectric...

Applications of back-end-of-line (BEOL) capacitors in compute-in-me...

Replacement metal COB integration process for embedded DRAM

Gate stacks for FinFET transistors

FeFET with embedded conductive sidewall spacers and process for for...

Piezo-resistive transistor based resonator with anti-ferroelectric...

Ferroelectric transistors to store multiple states of resistances f...

Transistor device with (anti)ferroelectric spacer structures

Piezo-resistive transistor based resonator with ferroelectric gate...

Trench capacitor with extended dielectric layer

Transistor device with variously conformal gate dielectric layers

Patents Applicationslast 30 patents

FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION

INTEGRATED CIRCUITS WITH MONOLAYER TMD CHANNEL AND MULTILAYER TMD S...

SEEDED GROWTH FOR 2D NANORIBBON TRANSISTORS

BEOL CONTACT METALS FOR 2D TRANSISTORS

TRANSISTOR STRUCTURES HAVING A DOPING LAYER ON TRANSITION METAL DIC...

TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL...

PASSIVATION OF CRYSTALLINE SUBSTRATE FOR METAL CHALCOGEN MATERIAL S...

SELECTIVE GATE OXIDE FORMATION ON 2D MATERIAL BASED TRANSISTOR DEVICES

2D NANORIBBONS UTILIZING SILICON SCAFFOLDING

TRANSFER-FREE 2D FET AND FEFET DEVICE FABRICATION BY 2D MATERIAL GR...

TMD INVERTED NANOWIRE INTEGRATION

SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROEL...

DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A...

SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-...

HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS

GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECT...

MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT

CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION

INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS

IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY

TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC

FERROELECTRIC CAPACITOR WITHIN BACKSIDE INTERCONNECT

BACK-END-OF-LINE 2D TRANSISTOR

CONTACT ARCHITECTURE FOR 2D STACKED NANORIBBON TRANSISTOR

ALTERNATING SACRIFICIAL LAYER MATERIALS FOR MECHANICALLY STABLE 2D...

BACK-END-OF-LINE 2D MEMORY CELL

SELF-ASSEMBLED MONOLAYER ON A DIELECTRIC FOR TRANSITION METAL DICHA...

2D LAYERED GATE OXIDE

MICROELECTRONIC DIE WITH TWO DIMENSIONAL (2D) COMPLEMENTARY METAL O...

STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED...