Victor Ku

Person

Yorktown Heights, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
CMOS silicide metal gate integration
- Patent number 7,655,557
- Issue date Feb 2, 2010
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating dual material gate in a semiconductor device
- Patent number 7,635,648
- Issue date Dec 22, 2009
- Applied Materials, Inc.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS silicide metal gate integration
- Patent number 7,411,227
- Issue date Aug 12, 2008
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process options of forming silicided metal gates for advanced CMOS...
- Patent number 7,326,610
- Issue date Feb 5, 2008
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS silicide metal gate integration
- Patent number 7,056,782
- Issue date Jun 6, 2006
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET gate structure with metal gate electrode and silicide contact
- Patent number 7,056,794
- Issue date Jun 6, 2006
- International Business Machines Corporation
- Victor Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a disposable reversed spacer process for hi...
- Patent number 7,041,538
- Issue date May 9, 2006
- International Business Machines Corporation
- Meikei Ieong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process options of forming silicided metal gates for advanced CMOS...
- Patent number 7,029,966
- Issue date Apr 18, 2006
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming FET silicide gate structures incorporating inner...
- Patent number 6,974,736
- Issue date Dec 13, 2005
- International Business Machines Corporation
- Victor Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for integration of silicide contacts and silicide gate metals
- Patent number 6,927,117
- Issue date Aug 9, 2005
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming metal replacement gate of high performance
- Patent number 6,921,711
- Issue date Jul 26, 2005
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure of a disposable reversed spacer process for hi...
- Patent number 6,677,646
- Issue date Jan 13, 2004
- International Business Machines Corporation
- Meikei Ieong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming junction on insulator (JOI) structure
- Patent number 6,544,874
- Issue date Apr 8, 2003
- International Business Machines Corporation
- Jack A. Mandelman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of notched gates by passivating partially etched gate s...
- Patent number 6,528,363
- Issue date Mar 4, 2003
- International Business Machines Corporation
- Victor Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming notch gate having self-aligned raised source/dra...
- Patent number 6,506,649
- Issue date Jan 14, 2003
- International Business Machines Corporation
- Ka Hing Fung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low dielectric constant sidewall spacer using notch gate process
- Patent number 6,437,377
- Issue date Aug 20, 2002
- International Business Machines Corporation
- Atul C. Ajmera
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR FABRICATING DUAL MATERIAL GATE IN A SEMICONDUCTOR DEVICE
- Publication number 20090258484
- Publication date Oct 15, 2009
- IGOR PEIDOUS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS SILICIDE METAL GATE INTEGRATION
- Publication number 20080254622
- Publication date Oct 16, 2008
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor devices and methods of manufacture thereof
- Publication number 20070134861
- Publication date Jun 14, 2007
- Jin-Ping Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS silicide metal gate integration
- Publication number 20060189061
- Publication date Aug 24, 2006
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process options of forming silicided metal gates for advanced CMOS...
- Publication number 20060105515
- Publication date May 18, 2006
- IBM CORPORATION
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS silicide metal gate integration
- Publication number 20050186747
- Publication date Aug 25, 2005
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET GATE STRUCTURE WITH METAL GATE ELECTRODE AND SILICIDE CONTACT
- Publication number 20050153530
- Publication date Jul 14, 2005
- International Business Machines Corporation
- Victor Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING FET SILICIDE GATE STRUCTURES INCORPORATING INNER...
- Publication number 20050153494
- Publication date Jul 14, 2005
- International Business Machines Corporation
- Victor Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for integration of silicide contacts and silicide gate metals
- Publication number 20050118757
- Publication date Jun 2, 2005
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS OPTIONS OF FORMING SILICIDED METAL GATES FOR ADVANCED CMOS...
- Publication number 20050064690
- Publication date Mar 24, 2005
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR METAL REPLACEMENT GATE OF HIGH PERFORMANCE
- Publication number 20050051854
- Publication date Mar 10, 2005
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure of a disposable reversed spacer process for hi...
- Publication number 20040104433
- Publication date Jun 3, 2004
- International Business Machines Corporation
- Meikei Ieong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and structure of a disposable reversed spacer process for hi...
- Publication number 20030189228
- Publication date Oct 9, 2003
- International Business Machines Corporation
- Meikei Ieong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING JUNCTION ON INSULATOR (JOI) STRUCTURE
- Publication number 20030032272
- Publication date Feb 13, 2003
- International Business Machines Corporation
- Jack A. Mandelman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of notched gates by passivating partially etched gate s...
- Publication number 20020132394
- Publication date Sep 19, 2002
- International Business Machines Corporation
- Victor Ku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING NOTCH GATE HAVING SELF-ALIGNED RAISED SOURCE/DRA...
- Publication number 20020132431
- Publication date Sep 19, 2002
- International Business Machines Corporation
- Ka Hing Fung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW DIELECTRIC CONSTANT SIDEWALL SPACER USING NOTCH GATE PROCESS
- Publication number 20020096695
- Publication date Jul 25, 2002
- International Business Machines Corporation
- Atul C. Ajmera
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

CMOS silicide metal gate integration

Methods for fabricating dual material gate in a semiconductor device

CMOS silicide metal gate integration

Process options of forming silicided metal gates for advanced CMOS...

CMOS silicide metal gate integration

FET gate structure with metal gate electrode and silicide contact

Method of manufacturing a disposable reversed spacer process for hi...

Process options of forming silicided metal gates for advanced CMOS...

Method of forming FET silicide gate structures incorporating inner...

Method for integration of silicide contacts and silicide gate metals

Method for forming metal replacement gate of high performance

Method and structure of a disposable reversed spacer process for hi...

Method for forming junction on insulator (JOI) structure

Fabrication of notched gates by passivating partially etched gate s...

Method for forming notch gate having self-aligned raised source/dra...

Low dielectric constant sidewall spacer using notch gate process

Patents Applicationslast 30 patents

METHODS FOR FABRICATING DUAL MATERIAL GATE IN A SEMICONDUCTOR DEVICE

CMOS SILICIDE METAL GATE INTEGRATION

Semiconductor devices and methods of manufacture thereof

CMOS silicide metal gate integration

Process options of forming silicided metal gates for advanced CMOS...

CMOS silicide metal gate integration

FET GATE STRUCTURE WITH METAL GATE ELECTRODE AND SILICIDE CONTACT

METHOD OF FORMING FET SILICIDE GATE STRUCTURES INCORPORATING INNER...

Method for integration of silicide contacts and silicide gate metals

PROCESS OPTIONS OF FORMING SILICIDED METAL GATES FOR ADVANCED CMOS...

STRUCTURE AND METHOD FOR METAL REPLACEMENT GATE OF HIGH PERFORMANCE

Method and structure of a disposable reversed spacer process for hi...

Method and structure of a disposable reversed spacer process for hi...

METHOD FOR FORMING JUNCTION ON INSULATOR (JOI) STRUCTURE

Fabrication of notched gates by passivating partially etched gate s...

METHOD FOR FORMING NOTCH GATE HAVING SELF-ALIGNED RAISED SOURCE/DRA...

LOW DIELECTRIC CONSTANT SIDEWALL SPACER USING NOTCH GATE PROCESS