Vinayak Bharat NAIK

Person

Singapore, SG

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic field sensor
- Patent number 12,032,041
- Issue date Jul 9, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Vinayak Bharat Naik
- G01 - MEASURING TESTING
Information Patent Grant
Laser-detection devices including a voltage-controlled magnetic-tun...
- Patent number 12,027,474
- Issue date Jul 2, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Jia Hao Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spiking neural network hardware based on magnetic-tunnel-junction l...
- Patent number 11,894,029
- Issue date Feb 6, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Vinayak Bharat Naik
- G11 - INFORMATION STORAGE
Information Patent Grant
Tunnel magneto-resistive (TMR) sensor with perpendicular magnetic t...
- Patent number 11,791,083
- Issue date Oct 17, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng-Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic field sensor using magnetic tunneling junction (MTJ) struc...
- Patent number 11,747,412
- Issue date Sep 5, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Vinayak Bharat Naik
- G01 - MEASURING TESTING
Information Patent Grant
Magnetic field sensor with MTJ elements arranged in series
- Patent number 11,719,773
- Issue date Aug 8, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hemant M. Dixit
- G01 - MEASURING TESTING
Information Patent Grant
Memory cell having a free ferromagnetic material layer with a curve...
- Patent number 11,682,514
- Issue date Jun 20, 2023
- GLOBALFOUNDRIES U.S. INC.
- Hemant Dixit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic field sensor using different magnetic tunneling junction (...
- Patent number 11,574,758
- Issue date Feb 7, 2023
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kazutaka Yamane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM device and methods of making such an MRAM device
- Patent number 11,538,856
- Issue date Dec 27, 2022
- GLOBALFOUNDRIES U.S. INC.
- Hemant Dixit
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage layer for magnetic memory with high thermal stability
- Patent number 10,840,297
- Issue date Nov 17, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Taiebeh Tahmasebi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High energy barrier perpendicular magnetic tunnel junction element...
- Patent number 10,529,917
- Issue date Jan 7, 2020
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kazutaka Yamane
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuits with magnetic tunnel junctions and methods for...
- Patent number 10,381,554
- Issue date Aug 13, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Vinayak Bharat Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite spacer layer for magnetoresistive memory
- Patent number 10,297,745
- Issue date May 21, 2019
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Taiebeh Tahmasebi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MRAM with metal-insulator-transition material
- Patent number 10,134,459
- Issue date Nov 20, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Storage layer for magnetic memory with high thermal stability
- Patent number 10,128,309
- Issue date Nov 13, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Taiebeh Tahmasebi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory with tunneling magnetoresistance enhanced spacer layer
- Patent number 9,923,137
- Issue date Mar 20, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Taiebeh Tahmasebi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory with tunneling magnetoresistance enhanced spacer layer
- Patent number 9,876,163
- Issue date Jan 23, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Taiebeh Tahmasebi
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuits with magnetic tunnel junctions and methods for...
- Patent number 9,865,801
- Issue date Jan 9, 2018
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Kazutaka Yamane
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage-tunable magnetic devices for communication applications
- Patent number 9,817,088
- Issue date Nov 14, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Vinayak Bharat Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High sensing margin magnetic resistive memory device in which a mem...
- Patent number 9,734,881
- Issue date Aug 15, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Vinayak Bharat Naik
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory cells with high write current and read stability
- Patent number 9,734,882
- Issue date Aug 15, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- G11 - INFORMATION STORAGE
Information Patent Grant
High thermal budget magnetic memory
- Patent number 9,666,640
- Issue date May 30, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Vinayak Bharat Naik
- G11 - INFORMATION STORAGE
Information Patent Grant
Voltage controlled spin switches for low power applications
- Patent number 9,646,666
- Issue date May 9, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Deepanjan Datta
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory cells with fast read/write speed
- Patent number 9,570,138
- Issue date Feb 14, 2017
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Eng Huat Toh
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic memory cells with low switching current density
- Patent number 9,542,987
- Issue date Jan 10, 2017
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat Naik
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC-TUNNEL-JUNCTION DEVICES FOR A MAGNETIC-FIELD SENSOR
- Publication number 20240389467
- Publication date Nov 21, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng-Huat Toh
Information Patent Application
MAGNETIC SHIELDS FOR INTEGRATED CIRCUITS
- Publication number 20240292758
- Publication date Aug 29, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- VINAYAK BHARAT NAIK
Information Patent Application
LASER-DETECTION DEVICES INCLUDING A VOLTAGE-CONTROLLED MAGNETIC-TUN...
- Publication number 20240021543
- Publication date Jan 18, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Jia Hao Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC FIELD SENSOR
- Publication number 20230296698
- Publication date Sep 21, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat NAIK
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC SHIELDING OF SEMICONDUCTOR DEVICES
- Publication number 20230112673
- Publication date Apr 13, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- ZISHAN ALI SYED MOHAMMED
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC FIELD SENSOR USING MAGNETIC TUNNELING JUNCTION (MTJ) STRUC...
- Publication number 20230076514
- Publication date Mar 9, 2023
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat NAIK
- G01 - MEASURING TESTING
Information Patent Application
MAGNETIC FIELD SENSOR WITH MTJ ELEMENTS ARRANGED IN SERIES
- Publication number 20230014455
- Publication date Jan 19, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hemant M. Dixit
- G01 - MEASURING TESTING
Information Patent Application
TUNNEL MAGNETO-RESISTIVE (TMR) SENSOR WITH PERPENDICULAR MAGNETIC T...
- Publication number 20220384082
- Publication date Dec 1, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng-Huat TOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY ELEMENTS FORMED IN CONJUNCTION WITH A MAGNETIC VIA
- Publication number 20220367790
- Publication date Nov 17, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC FIELD SENSOR USING DIFFERENT MAGNETIC TUNNELING JUNCTION (...
- Publication number 20220359114
- Publication date Nov 10, 2022
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Kazutaka YAMANE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL HAVING A FREE FERROMAGNETIC MATERIAL LAYER WITH A CURVE...
- Publication number 20220059754
- Publication date Feb 24, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Hemant Dixit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM DEVICE AND METHODS OF MAKING SUCH AN MRAM DEVICE
- Publication number 20210359000
- Publication date Nov 18, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Hemant Dixit
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS FOR...
- Publication number 20190081234
- Publication date Mar 14, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE LAYER FOR MAGNETIC MEMORY WITH HIGH THERMAL STABILITY
- Publication number 20190067368
- Publication date Feb 28, 2019
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Taiebeh TAHMASEBI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT WITH REDUCED TEMPERATURE SENSITIVITY
- Publication number 20180130943
- Publication date May 10, 2018
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Energy Barrier Perpendicular Magnetic Tunnel Junction Element...
- Publication number 20180123027
- Publication date May 3, 2018
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Kazutaka YAMANE
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS FOR...
- Publication number 20170309813
- Publication date Oct 26, 2017
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER LAYER FOR MAGNETORESISTIVE MEMORY
- Publication number 20170125664
- Publication date May 4, 2017
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Taiebeh TAHMASEBI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STORAGE LAYER FOR MAGNETIC MEMORY WITH HIGH THERMAL STABILITY
- Publication number 20160284763
- Publication date Sep 29, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Taiebeh TAHMASEBI
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE-TUNABLE MAGNETIC DEVICES FOR COMMUNICATION APPLICATIONS
- Publication number 20160274198
- Publication date Sep 22, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat NAIK
- G01 - MEASURING TESTING
Information Patent Application
HIGH THERMAL BUDGET MAGNETIC MEMORY
- Publication number 20160276407
- Publication date Sep 22, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat NAIK
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY WITH TUNNELING MAGNETORESISTANCE ENHANCED SPACER LAYER
- Publication number 20160260892
- Publication date Sep 8, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Taiebeh TAHMASEBI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY WITH TUNNELING MAGNETORESISTANCE ENHANCED SPACER LAYER
- Publication number 20160260891
- Publication date Sep 8, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Taiebeh TAHMASEBI
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH SENSING MARGIN RESISTIVE MEMORY
- Publication number 20160225426
- Publication date Aug 4, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat NAIK
- G11 - INFORMATION STORAGE
Information Patent Application
MRAM WITH METAL-INSULATOR-TRANSITION MATERIAL
- Publication number 20160225818
- Publication date Aug 4, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE CONTROLLED SPIN SWITCHES FOR LOW POWER APPLICATIONS
- Publication number 20160225890
- Publication date Aug 4, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Deepanjan DATTA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY CELLS WITH FAST READ/WRITE SPEED
- Publication number 20160225429
- Publication date Aug 4, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY CELLS WITH HIGH WRITE CURRENT AND READ STABILITY
- Publication number 20160225819
- Publication date Aug 4, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Eng Huat TOH
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY CELLS WITH LOW SWITCHING CURRENT DENSITY
- Publication number 20160225423
- Publication date Aug 4, 2016
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Vinayak Bharat NAIK
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20150028440
- Publication date Jan 29, 2015
- Agency for Science, Technology and Research
- Ruisheng Liu
- H01 - BASIC ELECTRIC ELEMENTS

Vinayak Bharat NAIK

Person

Patents Grantslast 30 patents

Magnetic field sensor

Laser-detection devices including a voltage-controlled magnetic-tun...

Spiking neural network hardware based on magnetic-tunnel-junction l...

Tunnel magneto-resistive (TMR) sensor with perpendicular magnetic t...

Magnetic field sensor using magnetic tunneling junction (MTJ) struc...

Magnetic field sensor with MTJ elements arranged in series

Memory cell having a free ferromagnetic material layer with a curve...

Magnetic field sensor using different magnetic tunneling junction (...

MRAM device and methods of making such an MRAM device

Storage layer for magnetic memory with high thermal stability

High energy barrier perpendicular magnetic tunnel junction element...

Integrated circuits with magnetic tunnel junctions and methods for...

Composite spacer layer for magnetoresistive memory

MRAM with metal-insulator-transition material

Storage layer for magnetic memory with high thermal stability

Magnetic memory with tunneling magnetoresistance enhanced spacer layer

Magnetic memory with tunneling magnetoresistance enhanced spacer layer

Integrated circuits with magnetic tunnel junctions and methods for...

Voltage-tunable magnetic devices for communication applications

High sensing margin magnetic resistive memory device in which a mem...

Magnetic memory cells with high write current and read stability

High thermal budget magnetic memory

Voltage controlled spin switches for low power applications

Magnetic memory cells with fast read/write speed

Magnetic memory cells with low switching current density

Patents Applicationslast 30 patents

MAGNETIC-TUNNEL-JUNCTION DEVICES FOR A MAGNETIC-FIELD SENSOR

MAGNETIC SHIELDS FOR INTEGRATED CIRCUITS

LASER-DETECTION DEVICES INCLUDING A VOLTAGE-CONTROLLED MAGNETIC-TUN...

MAGNETIC FIELD SENSOR

MAGNETIC SHIELDING OF SEMICONDUCTOR DEVICES

MAGNETIC FIELD SENSOR USING MAGNETIC TUNNELING JUNCTION (MTJ) STRUC...

MAGNETIC FIELD SENSOR WITH MTJ ELEMENTS ARRANGED IN SERIES

TUNNEL MAGNETO-RESISTIVE (TMR) SENSOR WITH PERPENDICULAR MAGNETIC T...

NON-VOLATILE MEMORY ELEMENTS FORMED IN CONJUNCTION WITH A MAGNETIC VIA

MAGNETIC FIELD SENSOR USING DIFFERENT MAGNETIC TUNNELING JUNCTION (...

MEMORY CELL HAVING A FREE FERROMAGNETIC MATERIAL LAYER WITH A CURVE...

MRAM DEVICE AND METHODS OF MAKING SUCH AN MRAM DEVICE

INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS FOR...

STORAGE LAYER FOR MAGNETIC MEMORY WITH HIGH THERMAL STABILITY

MAGNETIC TUNNEL JUNCTION ELEMENT WITH REDUCED TEMPERATURE SENSITIVITY

High Energy Barrier Perpendicular Magnetic Tunnel Junction Element...

INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS FOR...

SPACER LAYER FOR MAGNETORESISTIVE MEMORY

STORAGE LAYER FOR MAGNETIC MEMORY WITH HIGH THERMAL STABILITY

VOLTAGE-TUNABLE MAGNETIC DEVICES FOR COMMUNICATION APPLICATIONS

HIGH THERMAL BUDGET MAGNETIC MEMORY

MAGNETIC MEMORY WITH TUNNELING MAGNETORESISTANCE ENHANCED SPACER LAYER

MAGNETIC MEMORY WITH TUNNELING MAGNETORESISTANCE ENHANCED SPACER LAYER

HIGH SENSING MARGIN RESISTIVE MEMORY

MRAM WITH METAL-INSULATOR-TRANSITION MATERIAL

VOLTAGE CONTROLLED SPIN SWITCHES FOR LOW POWER APPLICATIONS

MAGNETIC MEMORY CELLS WITH FAST READ/WRITE SPEED

MAGNETIC MEMORY CELLS WITH HIGH WRITE CURRENT AND READ STABILITY

MAGNETIC MEMORY CELLS WITH LOW SWITCHING CURRENT DENSITY

MAGNETORESISTIVE DEVICE AND METHOD OF FORMING THE SAME