Virendra V. S. Rana

Person

Berkeley Heights, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of integrated circuit manufacturing using deposited oxide
- Patent number 5,328,872
- Issue date Jul 12, 1994
- AT&T Bell Laboratories
- Ajit S. Manocha
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Tungsten metallization
- Patent number 5,227,335
- Issue date Jul 13, 1993
- AT&T Bell Laboratories
- Lowell H. Holschwandner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making integrated circuit interconnection
- Patent number 5,141,897
- Issue date Aug 25, 1992
- AT&T Bell Laboratories
- Ajit S. Manocha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit fabrication utilizing amorphous layers
- Patent number 5,135,886
- Issue date Aug 4, 1992
- AT&T Bell Laboratories
- Ajit S. Manocha
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Metallization processing
- Patent number 5,084,415
- Issue date Jan 28, 1992
- AT&T Bell Laboratories
- Ajit S. Manocha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making integrated-circuit device metallization
- Patent number 4,985,371
- Issue date Jan 15, 1991
- AT&T Bell Laboratories
- Virendra V. S. Rana
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liquid phase epitaxial growth of bismuth-containing garnet films
- Patent number 4,544,438
- Issue date Oct 1, 1985
- AT&T Bell Laboratories
- Lars C. Luther
- C30 - CRYSTAL GROWTH
Information Patent Grant
Garnet epitaxial films with high Curie temperatures
- Patent number 4,468,438
- Issue date Aug 28, 1984
- AT&T Bell Laboratories
- Stuart L. Blank
- H01 - BASIC ELECTRIC ELEMENTS

Virendra V. S. Rana

Person

Patents Grantslast 30 patents

Method of integrated circuit manufacturing using deposited oxide

Tungsten metallization

Method of making integrated circuit interconnection

Integrated circuit fabrication utilizing amorphous layers

Metallization processing

Process for making integrated-circuit device metallization

Liquid phase epitaxial growth of bismuth-containing garnet films

Garnet epitaxial films with high Curie temperatures