This application is a continuation of application Ser. No. 07/498,292, filed on Mar. 23, 1990 now abandoned.
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3856648 | Fuller et al. | Dec 1974 | |
4267012 | Pierce et al. | May 1981 | |
4566026 | Lee et al. | Jan 1986 | |
4624864 | Hartmann | Nov 1986 | |
4710398 | Homma et al. | Dec 1987 | |
4742014 | Hooper et al. | May 1988 | |
4764484 | Mo | Aug 1988 | |
4851369 | Ellwanger et al. | Jul 1989 | |
4866008 | Brighton et al. | Sep 1989 | |
4884123 | Dixit et al. | Nov 1989 | |
4910169 | Hoshino | Mar 1990 | |
4954423 | McMann et al. | Sep 1990 |
Number | Date | Country |
---|---|---|
0143652 | Jul 1985 | EPX |
0050429 | Mar 1982 | JPX |
0169151 | Sep 1984 | JPX |
0085513 | May 1985 | JPX |
0208850 | Sep 1986 | JPX |
Entry |
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"Submicron Wiring Technology with Tungsten and Planarization," C. Kaanta et al., Proceedings of the Fifth International IEEE VLSI Multilevel Interconnection Conference (VMIC), Santa Clara, CA, Jun. 13-14, 1988, pp. 21-28. |
Sachdev et al.; "Tungsten interconnects in VLSI"; Proceedings of the 1985 Workshop; MRS; Oct., 1985; pp. 161-171. |
"Interconnect Materials for VLSI Circuits"; Paulean; Solid State Tech. Apr., 1987; pp. 155-162. |
"Nucleation and Growth . . . A Review"; Broadbent; J. Vac. Sci. Tech. B. vol. 5 (6); Nov.;Dec. 1987; pp. 1661-1666. |
"High-density . . . Groove Metallization"; Broadbent et al; IEEE Transactions on Electron Devices; vol. 35, No. 7, Jul. 88; pp. 952-956. |
Number | Date | Country | |
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Parent | 498292 | Mar 1990 |