Vladimir Bolkhovsky

Person

Framingham, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor surface passivation
- Patent number 10,825,950
- Issue date Nov 3, 2020
- Massachusetts Institute of Technology
- James Gregory
- G01 - MEASURING TESTING
Information Patent Grant
Superconducting integrated circuit
- Patent number 10,658,424
- Issue date May 19, 2020
- Massachusetts Institute of Technology
- William D. Oliver
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method to manufacture LDMOS transistors with improved threshold vol...
- Patent number 7,696,049
- Issue date Apr 13, 2010
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Premature breakdown in submicron device geometries
- Patent number 7,195,965
- Issue date Mar 27, 2007
- Texas Instruments Incorporated
- John Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to manufacture LDMOS transistors with improved threshold vol...
- Patent number 7,141,455
- Issue date Nov 28, 2006
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bladed silicon-on-insulator semiconductor devices and method of making
- Patent number 6,800,917
- Issue date Oct 5, 2004
- Texas Instruments Incorporated
- Sheldon D. Haynie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bladed silicon-on-insulator semiconductor devices and method of making
- Patent number 6,797,547
- Issue date Sep 28, 2004
- Texas Instruments Incorporated
- Sheldon D. Haynie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electromigration-resistant via structure
- Patent number 6,096,637
- Issue date Aug 1, 2000
- Compaq Computer Corporation
- Tirunelveli S. Sriram
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor Surface Passivation
- Publication number 20190371855
- Publication date Dec 5, 2019
- Massachusetts Institute of Technology
- James Gregory
- G01 - MEASURING TESTING
Information Patent Application
Superconducting Integrated Circuit
- Publication number 20180247974
- Publication date Aug 30, 2018
- Massachusetts Institute of Technology
- William D. Oliver
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD TO MANUFACTURE LDMOS TRANSISTORS WITH IMPROVED THRESHOLD VOL...
- Publication number 20070048952
- Publication date Mar 1, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bladed silicon-on-insulator semiconductor devices and method of making
- Publication number 20040222485
- Publication date Nov 11, 2004
- Sheldon D. Haynie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bladed silicon-on-insulator semiconductor devices and method of making
- Publication number 20040129976
- Publication date Jul 8, 2004
- Sheldon D. Haynie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bladed silicon-on-insulator semiconductor devices and method of making
- Publication number 20040113223
- Publication date Jun 17, 2004
- TEXAS INSTRUMENTS INCORPORATED
- Sheldon D. Haynie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to manufacture LDMOS transistors with improved threshold vol...
- Publication number 20040106236
- Publication date Jun 3, 2004
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Premature breakdown in submicron device geometries
- Publication number 20040079991
- Publication date Apr 29, 2004
- John Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing a semiconductor device using dummy opening...
- Publication number 20040079974
- Publication date Apr 29, 2004
- TEXAS INSTRUMENTS INCORPORATED
- John Lin
- H01 - BASIC ELECTRIC ELEMENTS

Vladimir Bolkhovsky

Person

Patents Grantslast 30 patents

Semiconductor surface passivation

Superconducting integrated circuit

Method to manufacture LDMOS transistors with improved threshold vol...

Premature breakdown in submicron device geometries

Method to manufacture LDMOS transistors with improved threshold vol...

Bladed silicon-on-insulator semiconductor devices and method of making

Bladed silicon-on-insulator semiconductor devices and method of making

Electromigration-resistant via structure

Patents Applicationslast 30 patents

Semiconductor Surface Passivation

Superconducting Integrated Circuit

METHOD TO MANUFACTURE LDMOS TRANSISTORS WITH IMPROVED THRESHOLD VOL...

Bladed silicon-on-insulator semiconductor devices and method of making

Bladed silicon-on-insulator semiconductor devices and method of making

Bladed silicon-on-insulator semiconductor devices and method of making

Method to manufacture LDMOS transistors with improved threshold vol...

Premature breakdown in submicron device geometries

Method for manufacturing a semiconductor device using dummy opening...